竹内研究室の強誘電体NANDフラッシュメモリ(Fe-NAND)の研究が日経エレクトロニクス2009年4月20日号に掲載されました。
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2009.04.18
竹内研究室の強誘電体NANDフラッシュメモリ(Fe-NAND)の研究が日経エレクトロニクス2009年4月20日号に掲載されました。
「どう付き合うかSSD：制御LSI、OS、メモリ総力を結集して信頼性向上へ」
Department of Electrical and Electronic Engineering, Department of Information and Communication Engineering, The University of Tokyo
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