Ideal Current Transport in Ultrawide Bandgap (UWBG) Aluminum Nitride (AlN) Schottky Barrier Diode Has Been Discovered and Revealed!
Publication & Awards
2024.12.11
Department of Electrical and Electronic Engineering, Department of Information and Communication Engineering, The University of Tokyo
For those aiming for EEIC
Department of Electrical Engineering and Information SystemsGraduate School of Information Science and Technology
Department of Information and Communication EngineeringGraduate School of Frontier Sciences
Department of Advanced EnergyThe Interfaculty Initiative in Information Studies/Graduate School of Interdisciplinary Information Studies
