News

Assistant Professor Yuto Miyatake received SSDM Young Researcher Award

Yamato Abe (M2), Department of Electrical Engineering and Information Systems, received Poster Award, Biomedical Engineering Symposium

MLC (Multi-level Cell) Operation with over 10-year Data-retention of TaOx ReRAM CiM (Computation-in-Memory) for Low Energy Edge AI

High-Speed Active Metasurface Operating at Ultra-Low Driving Voltage

Realization of Brain-Inspired Devices Using Giant Resistive Switching in Ferroelectric Oxides: Mimicking Synaptic Functions through Electric Polarization of Ferroelectrics

Mr. Pengyu Guo (Doctoral student, EEIS, Nakayama Laboratory, D3) received the Best Presentation Award at SPML 2025.

Shunsuke Hirata (D1), Department of Electrical Engineering and Information Systems, received First Place in the ACM SIGGRAPH 2025 Student Research Competition (Graduate Division)

Metasurface-Based Compact Optical Device for Advanced Beam Multiplexing

Discovery of a New Electronic State in Functional Oxide: A Breakthrough Towards Next-Generation High-Performance Electronic Materials

Jiaxuan Chen (D3), Department of Electrical Engineering and Information Systems, received The Best Oral Presentation Award at Neuronics 2025 Tsukuba

Elucidation of scattering mechanism of 2DEG in ScAlN/GaN heterostructure: Paving the Way for Performance Enhancement of High-Frequency GaN HEMTs

Riku Kobayashi (M1) , Department of Electrical Engineering and Information Systems, recieved IEEE WPTCE 2025, Best Student Paper Award

Achieving a Record-High Curie Temperature in Ferromagnetic Semiconductor

Tiny Shifts of Oxygen Atoms Enable Magnetization Reversal: Breakthrough in Highly Efficient Magnetization Switching in a Single-Layer Ferromagnetic Weyl Oxide

Information about EEIC Course Selection Guidance

進学選択ガイダンス（電子情報工学科・電気電子工学科）

Professor Ryuji Matsuhashi (EEIS) has been awarded the 2024 Japan Institute of Energy Award (Academic Division)

Assistant Professor Masahiro Mae of EEIC has received the Yasujirou Niwa Memorial Paper Award.

Revolutionizing memory devices: A giant resistance-change memristor for storing magnetic field history

Department of Information and Communication Engineering, Naemura Laboratory, 4th-year Bachelor’s student, Ryoma Kanai