竹内研究室が開発した極低電力SRAM技術が日経エレクトロニクスTech-Onで紹介されました。
Media Coverage
2009.12.09
竹内研究室が開発した極低電力SRAM技術が日経エレクトロニクスTech-Onで紹介されました。
「0.5Vで動作するSRAM，東京大学らが強誘電体FETで実現」
http://techon.nikkeibp.co.jp/article/NEWS/20091207/178376/?ST=lsi
Department of Electrical and Electronic Engineering, Department of Information and Communication Engineering, The University of Tokyo
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