竹内研究室が開発した強誘電体SRAMがEE Times Japanに紹介されました。
Media Coverage
2009.12.20
竹内研究室が開発した強誘電体SRAMがEE Times Japanに紹介されました。
「強誘電体SRAMやスピンMOS FETが開発、新材料や新機構で微細化限界打ち破る」
http://eetimes.jp/news/3571
Department of Electrical and Electronic Engineering, Department of Information and Communication Engineering, The University of Tokyo
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