竹内研究室が開発した強誘電体トランジスタを用いた0.5V動作SRAMが日経エレクトロニクス2010年1月11日号(p.61-68)に掲載されました。
Media Coverage
2010.02.13
竹内研究室が開発した強誘電体トランジスタを用いた0.5V動作SRAMが日経エレクトロニクス2010年1月11日号(p.61-68)に掲載されました。
「IEDM 2009：量産始まる32nm SoC技術、0.5V動作SRAMなどに注目」
Department of Electrical and Electronic Engineering, Department of Information and Communication Engineering, The University of Tokyo
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