竹内研究室のReRAM開発プロジェクトが日経エレクトロニクス2月7日号に取り上げられました。
Media Coverage
2011.02.07
竹内研究室のReRAM開発プロジェクトが日経エレクトロニクス2月7日号に取り上げられました。
「半導体ストレージ 迫る主役交代
フラッシュ・メモリ 危うし ついに王座陥落の時
2020年に情報量35Zバイト 無尽蔵の需要に新技術で挑む
先行する3次元NANDをReRAMなど新メモリが追う」
Department of Electrical and Electronic Engineering, Department of Information and Communication Engineering, The University of Tokyo
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