論文・著書一覧（2004年度）
Publications List
(2004)
研究論文
Journal Papers
[1]
Kazumasa
Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, and Yoshiaki
Nakano, "Fabrication of semiconductor laser for integration with optical
isolator", Japanese Journal of Applied Physics, vol. 43, no. 4A, pp.
1388-1392, April 2004.
[2]
Ning Li,
Ichitaro Waki, Chaiyasit Kumtornkittikul, Ji-Hao Liang, Masakazu Sugiyama,
Yukihiro Shimogaki, and Yoshiaki Nakano, "Fabrication of AlGaN-based
waveguides by inductively coupled plasma etching", Japanese Journal of
Applied Physics, vol. 43, no. 10B, pp. L1340-L1342, September 24, 2004.
[3]
梁吉鎬, 笹倉賢, 中野義昭, "高速光ワイヤレス通信用発光デバイス
(High-speed light emitting diodes for optical wireless communications)", 光学, vol. 33, no. 10, pp. 601-603, 2004年10月.
[4]
Katsumasa
Horiguchi, Yoshitada Katagiri, Yoshiaki Nakano, Ikutaro Kobayashi, and Yasuyuki
Mitsuoka, "Theoretical consideration of surface-plasmon polaritons based
on dynamics of electric dipoles formed on metal surfaces", Proceedings of
SPIE, "Optomechatronic Micro/Nano Components, Devices, and Systems,"
vol. 5604, pp. 185-194, Philadelphia, Pennsylvania, October 27-28, 2004.
[5]
Tadashi Suga,
Takao Niimi, Ikutaro Kobayashi, Yoshitada Katagiri, Yoshiaki Nakano, and
Yasuyuki Mitsuoka, "Investigation of splitting SPP modes propagating at
metal-dielectric interface", Proceedings of SPIE, "Optomechatronic
Micro/Nano Components, Devices, and Systems," vol. 5604, pp. 173-184,
Philadelphia, Pennsylvania, October 27-28, 2004.
[6]
Hiromasa
Shimizu and Yoshiaki Nakano, "First demonstration of TE mode nonreciprocal
propagation in an InGaAsP/InP active waveguide for an integratable optical
isolator", Japanese Journal of Applied Physics, vol. 43, no. 12A, pt. 2
(Express Letter), pp. L1561-L1563, November 12, 2004.
[7]
S. Inasawa, M.
Sugiyama and Y. Yamaguchi, “Laser-Induced Shape Transformation of Gold
Nanoparticles below the Melting Point: The Effect of Surface Melting,” J. Phys.
Chem. B 109, pp. 3104-3111
(2004).
[8]
T. Nakano, M.
Sugiyama, Y. Nakano and Y. Shimogaki:
The Role of the Surface Adsorption Layer during MOVPE Growth Analyzed by the
Flow Modulation Method, J. Crystal Growth, 472, pp. 15-23 (2004).
[9]
R. Shimizu, M.
Ogino, M. Sugiyama and Y. Shimogaki, “Analysis and modeling of low pressure
chemical vapor deposition of phosphorus-doped polysilicon in commercial scale
reactor,” J. Vac. Sci. Technol. A22, pp. 1763-1766 (2004).
[10]
M. Sugiyama,
S. Tagawa, H. Ohmura and S. Koda, “Supercritical water oxidation of a carbon
particle by Schlieren photography,” AIChE. J., 50, pp. 2082-2089 (2004).
[11]
A. Morita, M.
Sugiyama, H. Kameda, D. R. Hanson and S. Koda, “Mass accommodation coefficient
of water: Molecular dynamics simulation and revised analysis of droplet
train/flow reactor experiment,” J. Phys. Chem. B 108, pp. 9111-9120 (2004).
[12]
T. Hirose, T.
Omatsu, M. Sugiyama, S. Inasawa and S. Koda, “Au-nano-particles production by
pico-second ultra-violet laser deposition in Au-ion doped PMMA film,” Chem.
Phys. Lett. 390, pp. 166-169 (2004).
[13]
D. R. Hanson,
M. Sugiyama, A. Morita, “Revised Kinetics in the Droplet-Train Apparatus Due to
a Wall Loss,” J. Phys. Chem. A, 108, 3739-3744 (2004).
[14]
M. Sugiyama,
M. Kataoka, H. Ohmura, H. Fujiwara and S. Koda, “Oxidation of carbon particles
in supercritical water: rate and mechanism,” Ind. Eng. Chem. Res., 43, pp. 690-699 (2004).
[15]
M. Sugiyama,
H. J. Oh, Y. Nakano and Y. Shimogaki, “Polycrystals growth on dielectric masks
during InP/GaAs selective MOVPE,” J. Crystal Growth, 261 pp. 411-418 (2004).
[16]
H. J. Oh, M.
Sugiyama, Y. Nakano and Y. Shimogaki, “The effect of group V precursor on
selective area MOVPE of InP/GaAs-related materials,” J. Crystal Growth, 261 (2-3) pp. 419-426 (2004).
[17]
I. T. Im, H.
J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki, “Fundamental kinetics
determining growth rate profiles of In and GaAs in MOCVD with horizontal
reactor,” J. Crystal Growth, 261 (2-3) pp. 214-224 (2004).
国際会議論文
International Conferences
[18]
Masakazu
Sugiyama, Ho-Jin Oh, Ik-Tae Im, Yoshiaki Nakano, and Yukihiro Shimogaki,
"Measurement of surface reaction rate constants and reactor-scale
simulation of growth rate and composition in InGaAsP MOVPE", Workbook,
12th International Conference on Metal-Organic Vapor Phase Epitaxy, p. 29,
Maui, Hawaii, May 30-June 4, 2004.
[19]
Takayuki
Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, "The
role of the surface adsorption layer during InGaAsP MOVPE growth analyzed by
the flow modulation method", Workbook, 12th International Conference on
Metal-Organic Vapor Phase Epitaxy, p.
9, Maui, Hawaii, May 30-June 4, 2004.
[20]
Takafumi
Ohtsuka and Yoshiaki Nakano, "Strain distribution and band structure of
mass-transported InAsP quantum wires buried in InGaAsP/InP", Conference
Proceedings, 16th International Conference on Indium Phosphide and Related
Materials (IPRM '04), P1-35, pp. 253-256, Kagoshima, Japan, May 31-June 4,
2004.
[21]
Mitsuru
Takenaka, Maura Raburn, and Yoshiaki Nakano, "Improvement of optical
flip-flop characteristics of compact directionally-coupled bistable laser
diode", Conference Proceedings, 16th International Conference on Indium
Phosphide and Related Materials (IPRM '04), WA3-4, pp. 523-526, Kagoshima, Japan,
May 31-June 4, 2004.
[22]
Abdullah Al
Amin, Xueliang Song, Kenji Sakurai,
Masakazu Sugiyama, and Yoshiaki Nakano, "Integration of
semiconductor optical amplifiers with
an arrayed waveguide grating
demultiplexer by MOVPE selective area growth", Technical Digest,
Topical Meeting on Integrated Photonics Research (IPR 2004), IFB4, San
Francisco, California, June 30-July 2, 2004.
[23]
Yoshiki Awa,
Tomoyoshi Ide, Taro Arakawa, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama,
Hiromasa Shimizu, Yukihiro Shimogaki, and Yoshiaki Nakano, "High etch rate
and improved etched surface morphology
in electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with
constant Ar flow", Extended Abstracts of the 23rd Electronic Materials
Symposium, C7, pp. 45-48, Izu-Nagaoka, Shizuoka, July 7-9, 2004.
[24]
Noriaki Waki,
Takayuki Nakano, Ho-jin Oh, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro
Shimogaki, "Understanding the abnormal growth of InP-related materials in
selective-area MOVPE", Extended Abstracts of the 23rd Electronic Materials
Symposium, D5, pp. 69-72, Izu-Nagaoka, Shizuoka, July 7-9, 2004.
[25]
Takayuki
Nakano, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki,
"Examination of sub-surface in MOVPE by time modulation growth",
Extended Abstracts of the 23rd Electronic Materials Symposium, D8, pp. 79-82,
Izu-Nagaoka, Shizuoka, July 7-9, 2004.
[26]
Shin Kaneko,
Hiromasa Shimizu, Xiaoping Zhou, and Yoshiaki Nakano, "Photo-induced phase
modulation in InGaAs/InGaAlAs electro-absorption modulators for all-optical
wavelength conversion", Technical Digest, the Ninth Optoelectronics and
Communications Conference (OECC 2004), 14F1-5, pp. 550-551, Yokohama, July
12-16, 2004.
[27]
Eric Gouardes
and Yoshiaki Nakano, "Mux/demux filter concatenation in an all-optical
burst switching (OBS) node", Technical Digest, the Ninth Optoelectronics
and Communications Conference (OECC 2004), 15A2-3, pp. 590-591, Yokohama, July
12-16, 2004.
[28]
Hiromasa
Shimizu and Yoshiaki Nakano, "Fabrication of a
semiconductor-waveguide-type optical isolator based on the nonreciprocal loss
shift", Abstract Book of the Third International Conference on Physics and
Applications of Spin-Related Phenomena in Semiconductors (PASPS III), Paper
128, pp. 137-138, Santa Barbara, California, July 21-23, 2004.
[29]
Mitsuru
Takenaka, Maura Raburn, and Yoshiaki Nakano, "(Invited Paper) Simulation
of semiconductor all-optical flip-flops using the finite-difference
beam-propagation method", Proceedings of the 4th International Conference
on Numerical Simulation of Optoelectronic Devices (NUSOD 2004), TuC1, pp.
15-18, Santa Barbara, California, August 24-26, 2004.
[30]
Abdullah Al
Amin, Takeshi Doi, Kenji Sakurai, Zhenrui Zhang, Xueliang Song, Masakazu
Sugiyama, and Yoshiaki Nakano,
"Simulation of bandgap in MOVPE selective area growth of InGaAsP-based
photonic integrated circuits", Proceedings of the 4th International
Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2004),
TuC5, pp. 25-26, Santa Barbara, California, August 24-26, 2004.
[31]
Maura Raburn,
Mitsuru Takenaka, and Yoshiaki Nakano, "Simulation of distributed Bragg
reflector multi-mode interference bistable laser diodes for cascadable
all-optical flip-flops", Proceedings of the 4th International Conference
on Numerical Simulation of Optoelectronic Devices (NUSOD 2004), TuC3, pp.
21-22, Santa Barbara, California, August 24-26, 2004.
[32]
Xueliang Song,
Zhenrui Zhang, and Yoshiaki Nakano, "Monolithically integrated SOA-MZI
all-optical switch with high-yield regrowth-free selective area MOVPE",
Technical Digest, 30th European Conference on Optical Communication (ECOC
2004), Mo3.4.5, pp. 34-35, Stockholm, Sweden, September 5-9, 2004.
[33]
Mitsuru
Takenaka, Maura Raburn, and Yoshiaki Nakano, "All-optical flip-flop
operation via two-mode bistability of multimode interference bistable laser
diodes", Technical Digest, 30th European Conference on Optical
Communication (ECOC 2004), Tu4.4.5, pp. 254-255, Stockholm, Sweden, September
5-9, 2004.
[34]
Mitsuru
Takenaka, Maura Raburn, and Yoshiaki Nakano, "All-optical flip-flop
multimode interference bistable laser diodes with reverse biased saturable
absorbers", Conference Digest, 19th IEEE International Semiconductor Laser
Conference, WC4, pp. 26-27, Matsue, Shimane, September 22-25, 2004.
[35]
Hiromasa
Shimizu and Yoshiaki Nakano, "First demonstration of TE mode nonreciprocal
propagation in a semiconductor active waveguide for an integratable optical
isolator", Conference Digest (Post Deadline Papers), 19th IEEE
International Semiconductor Laser Conference, SaB1, pp. 1-2, Matsue, Shimane, September
22-25, 2004.
[36]
Ning Li,
Ichitaro Waki, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano,
"Fabrication of group III-nitride waveguides by inductively coupled plasma
etching", Meeting Abstracts, 206th Meeting of the Electro-Chemical Society,
M1, Paper 1237, Oahu, Hawaii, October 3-8, 2004.
[38]
Yoshiki Awa,
Tomoyoshi Ide, Taro Arakawa, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama,
Hiromasa Shimizu, Yukihiro Shimogaki, and Yoshiaki Nakano, "Electron
cyclotron resonance reactive ion etching of GaN by cyclic injection of
CH4/H2/Ar and O2 with constant Ar flow for high etch rate and improvement of
etched surface morphology", Digest of Papers, International Microprocesses
and Nanotechnology Conference (MNC 2004), 28P-7-22, Osaka, Japan, October
26-29, 2004.
[39]
Tomonari
Shioda, Takeshi Doi, Abdullah Al Amin, Xue-Liang Song, Masakazu Sugiyama,
Yukihiro Shimogaki, and Yoshiaki Nakano, "Simulation and design of the
emission wavelength of multiple quantum well structures fabricated by selective
area metal-organic vapor phase epitaxy", Abstract of the 3rd Asian
Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p. 63 (2004).
[40]
Noriaki Waki,
Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki,
"Role of surface diffusion during selective area MOVPE growth of compound
semiconductor", Abstract of the 3rd Asian Conference on Chemical Vapor
Deposition, Taipei, Oct. 12-14, 2004, p. 51 (2004).
[41]
Chaiyasit
Kumtornkittikul, Ichitaro Waki, Ning Li, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano,
"GaN/AlN multiple quantum wells and waveguide fabrication for ultrafast
photonic devices utilizing intersubband transition", Conference
Proceedings, IEEE Region 10 Conference (TENCON 2004), TD-10-2,0899, pp. 140-143, Chiang Mai, Thailand, November
21-24, 2004.
[42]
Hiromasa
Shimizu and Yoshiaki Nakano, "Fabrication of a TE mode
semiconductor-waveguide-type optical isolator based on the nonreciprocal loss shift", Abstracts,
MRS Fall Meeting, J4.7, p. 276, Boston, Massachusetts, November 29-December 3,
2004.
[43]
Xueliang Song,
Foo Cheong Yit, Zhenrui Zhang, and Yoshiaki Nakano, "Monolithic MZI
all-optical switch with selective area MOVPE", Abstract Book, 2004
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD
04), T6-1, p. 99, Brisbane, Australia, December 8-10, 2004.
[44]
Foo Cheong
Yit, Xueliang Song, Haizheng Song, Zhenrui Zhang, Masakazu Sugiyama, and
Yoshiaki Nakano, "Four-bandgap energy monolithic integration in an SOA-MZI
all-optical switch with selective area MOVPE", Technical Digest, Eighth
International Symposium on Contemporary Photonics Technology (CPT 2005), E-2,
pp. 57-58, Tokyo, January 12-14, 2005.
[45]
Hiromasa
Shimizu and Yoshiaki Nakano, "14.7dB/mm TE mode nonreciprocal propagation
in an InGaAsP/InP active waveguide optical isolator", Technical Digest
(Post-deadline Papers), Conference on Optical Fiber Communication (OFC/NFOEC
'05), PDP18, Anaheim, California, March 6-11, 2005.
[46]
Y. Shimogaki,
T. Iino, M. Sugiyama, T. Momose, Y.S. Kim, T. Tsumura, Y. Kajikawa, S. Noda,
and H. Komiyama, “The initial nucleation behavior during Al, Cu, W-CVD on
barrier metal layers,” Proceedings of Material Research Society 2004 Spring
Meeting, F8.10, San Francisco, April 12-16, 2004 (2004).
[47]
M. Sugiyama,
T. Iino, T. Nakajima, T. Tanaka, Y. Egashira, K. Yamashita, H. Komiyama, and Y.
Shimogaki, “Theoretical optimization of Al-CVD process based on elementary
reaction simulation: from the growth rate to the surface morphology,” Abstract
of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14,
2004, p.72 (2004).
[48]
T. Momose, M.
Sugiyama, and Y. Shimogaki, “In situ observation of initial nucleation and
growth processes in chemical vapor deposition and supercritical fluid
deposition of copper,” Proc. Advanced Metallization Conference, Asia Session
2004 (ADMETA 2004), Tokyo, September 28-29, 2004, pp.106-107 (2004).
[49]
Y. Shimogaki,
M. Sugiyama, S. Noda, H. Komiyama, “Initial nucleation and growth in
fabrication of metal thin films by chemical vapor deposition,” Abstract of The
10th Asian Pacific Confederation of Chemical Engineering (APCChE 2004), Kitakyushu,
3P-08-051 (2004).
[50]
Y. Shimogaki,
M. Sugiyama, Ik-Tae Im, Ho-Jin Oh, T. Tokimitsu, H. Watanabe, Y. Nakano, and H.
Komiyama, “Multi-scale analysis for kinetic studies of chemical vapor
deposition processes,” Abstract of The 10th Asian Pacific Confederation of
Chemical Engineering (APCChE 2004), Kitakyushu, 3D-12 (2004).
[51]
H. Song, M.
Sugiyama, X. Song, Y. Nakano, and Y. Shimogaki, “The effect of substrate
misorientation on GaAs selective area MOVPE,” Abstract of the 3rd Asian
Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p.64
(2004).
著書
Books
[52]
Connie J.
Chang-Hasnain, Dexiu Huang, Yoshiaki Nakano, and Xiaomin Ren (Chairs/Editors),
"Materials, active devices, and optical amplifiers (Proceedings of SPIE,
Volume 5280)", The International Society for Optical Engineering (SPIE),
Bellingham, WA, 2004.
総説・解説論文
Review Papers
[53]
中野義昭, "(招待論文) 光ワイヤレス通信用発光・受光素子 (Invited Paper: Light emission and
detection devices for optical wireless communications)", 日本赤外線学会誌, vol. 13, no. 2, pp. 67-73, 2004年4月.
[54]
Yoshitada
Katagiri, Hiroshi Fukuda, Hiroyuki Shinojima, Yoshiaki Nakano, Masashi Nakao,
and Mitsuru Naganuma, "(Invited Paper) Nanometric mecha-photonics for
innovative information and communications systems", Proceedings of SPIE,
"Optomechatronic Micro/Nano Components, Devices, and Systems," vol.
5604, pp. 11-22, Philadelphia, Pennsylvania, October 27-28, 2004.
[55]
Yoshiaki
Nakano, "(Invited Paper) Semiconductor integrated digital photonic
devices", Meeting Abstracts, 206th Meeting of the Electro-Chemical
Society, Symposium N1, Paper 1434, Oahu, Hawaii, October 3-8, 2004.
[56]
中野義昭, "(招待講演) ナノテク研究の新動向：デジタルフォトニクス (Invited: New trend in nano-technology:
digital photonics)", 電子情報通信学会「次世代ナノ技術に関する研究専門委員会」第2回研究会講演資料集,
p. 35, 2004年11月25-26日.
シンポジウム・研究会・大会等発表
Symposiums and Domestic Conferences
[57]
和氣範明, 中野貴之, 呉豪振, 杉山正和, 中野義昭, 霜垣幸浩, "化合物半導体のMOVPE選択成長における異常成長制御", 化学工学会第69年会 講演要旨集(XX大学),
C306?, 2004年3月23-25?日.
[58]
中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "時間変調成長によるMOVPE表面反応メカニズムの解明", 化学工学会第69年会 講演要旨集(XX大学),
C306?, 2004年3月23-25?日.
[59]竹中充, モーラ・レイバン, 中野義昭, "多モード干渉カプラ型双安定半導体レーザを用いた全光フリップ・フロップ動作 (All optical flip-flop operation using a multimode interference
bistable laser diode)", 電子情報通信学会総合大会(東京工業大学)講演論文集, C-4-30, p. 358, 2004年3月22-25日.
[60]新見隆男, 小林郁太郎, 中野義昭, 片桐祥雅, 光岡靖幸, "金属光導波路におけるSPP-mode伝搬損失の評価 (Evaluation of SPP-mode loss guided by metal optical
waveguide)", 電子情報通信学会総合大会(東京工業大学)講演論文集, SC-5-5, p. S-71, 2004年3月22-25日.
[61]和氣範明, 中野貴之, 呉豪振, 杉山正和, 中野義昭, 霜垣幸浩, "化合物半導体のMOVPE選択成長における異常成長制御 (Abnormal growth control
in MOVPE selective area growth of compound semiconductor)", 第51回応用物理学関係連合講演会(東京工科大学), 28a-YG-7, 2004年3月28日.
[62]中野貴之, 杉山正和, 中野義昭, 霜垣幸浩,
"MOVPE法における結晶成長中での表面反応メカニズムの解明(2) (Investigation
of surface reaction mechanism during crystal growth in MOVPE 2)", 第51回応用物理学関係連合講演会(東京工科大学), 28p-YG-1, 2004年3月28日.
[63]金子慎, 清水大雅, 中野義昭, "InGaAs/InAlAs MQW-EA変調器における光誘起屈折率変化の測定 (Photo-induced refractive index change in InGaAs/InAlAs MQW-EA
modulators)", 第51回応用物理学関係連合講演会(東京工科大学), 30p-ZV-1, 2004年3月30日.
[64]李寧, C. カムトーンキッティクル, 脇一太郎, 杉山正和, 霜垣幸浩, 中野義昭, "塩素系ICPエッチングによるGaN導波路の作製 (Fabrication of GaN waveguides
using Cl2-based inductively coupled plasma etching)", 第51回応用物理学関係連合講演会(東京工科大学), 30a-ZV-7, 2004年3月30日.
[65]奈良田新一, ダルジャ・ジェッシー, 陳農, 中野義昭, "電流狭窄層をもったリッジ型半導体レーザの最適設計シミュレーション (Numerical optimization of ridge waveguide semiconductor lasers
with current confinement structure)", 第51回応用物理学関係連合講演会(東京工科大学), 31p-ZZ-2, 2004年3月31日.
[66]竹中充, モーラ・レイバン, 中野義昭, "方向性結合器型半導体レーザの小型化による全光フリップ・フロップの特性改善 (Improvement of characteristics of all-optical flip-flop using a
compact directionally-coupled bistable laser diode)", 第51回応用物理学関係連合講演会(東京工科大学), 31a-ZK-9, 2004年3月31日.
[67]大塚節文, 中野義昭, "マストランスポートInAsP量子細線のバンド構造に対するひずみの効果 (Strain effect on the band structure of mass-transported InAsP
quantum wires)", 第51回応用物理学関係連合講演会(東京工科大学), 31a-ZZ-2, 2004年3月31日.
[68]中野義昭, "(招待講演) 日本におけるフォトニックネットワークデバイス開発", 電子情報通信学会フォトニックネットワーク・ワークショップ, 東京工業大学, 2004年4月12日.
[69]Eric Gouardes and
Yoshiaki Nakano, "Dependence of an optical burst switching node
transparency on mux/demux arrayed waveguide grating (AWG波長多重・分離による光バーストスイッチングノードの透明性の変化)", 電子情報通信学会技術研究報告(フォトニックネットワーク研究会), PN2004-48, pp. 81-85, 2004年8月20日.
[70]和氣範明, 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "化合物半導体のMOVPE選択成長における表面拡散の役割 (Role of surface diffusion during selective area MOVPE growth of
compound semiconductor)", 第65回応用物理学会学術講演会(東北学院大学), 1a-P1-28, 2004年9月1日.
[71]中野貴之, 杉山正和, 中野義昭, 霜垣幸浩,
"MOVPE法における結晶成長中での表面反応メカニズムの解明(3) (Investigation
of surface reaction mechanism during crystal growth in MOVPE 3)", 第65回応用物理学会学術講演会(東北学院大学), 1a-P1-20, 2004年9月1日.
[72]阿波良基, 荒川太郎, 井手智祥, 杉山正和, 清水大雅, 霜垣幸浩, 中野義昭, 羽路伸夫, 多田邦雄, "GaNのガス交互供給ECR-RIEにおけるエッチング速度・エッチング面平坦性の改善 (High etch
rate and improved etched surface morphology in ECR -RIE of GaN by cyclic
injection of etching gases)", 第65回応用物理学会学術講演会(東北学院大学), 1p-ZK-8, 2004年9月1日.
[73]宋学良, 張臻瑞, 二口尚樹, 中野義昭,
"MOVPE選択成長による全光スイッチの動特性 (Dynamic switching
performance of all-optical switches fabricated with selective-area
MOVPE)", 第65回応用物理学会学術講演会(東北学院大学), 2a-ZM-8, 2004年9月2日.
[74]清水大雅, 中野義昭, "非相反損失に基づくTEモード半導体導波路型光アイソレータの改良試作 (Improved fabrication of a TE mode semiconductor-waveguide-type
optical isolator based on the non-reciprocal loss shift)", 第65回応用物理学会学術講演会(東北学院大学), 2p-ZM-7, 2004年9月2日.
[75]Abdullah Al Amin, Kenji
Sakurai, Takashi Sakurai, Masakazu Sugiyama, and Yoshiaki Nakano,
"Fabrication of double-etched waveguides for compact and low-loss InP
photonic circuits (コンパクトで低損失なInP光回路のための2回エッチ導波路の試作)", 第65回応用物理学会学術講演会(東北学院大学), 2a-ZM-7, 2004年9月2日.
[76]Chaiyasit
Kumtornkittikul, Ning Li, Ichictaro Waki, Hiroshi Otani, Masakazu Sugiyama,
and Yoshiaki Nakano, "GaN-based
waveguide structure for ultrafast photonic devices utilizing intersubband
absorption (GaN系サブバンド間吸収超高速光デバイスに向けた導波路の設計)", 電子情報通信学会エレクトロニクスソサイエティ大会(徳島大学)講演論文集, C-4-17, p. 271, 2004年9月21日.
[77]清水大雅, 中野義昭, "非相反損失変化に基づくTEモード半導体導波路型光アイソレータ", 第28回日本応用磁気学会学術講演概要集, 24aF-2, p. 516, 沖縄コンベンションセンター, 2004年9月21日～24日.
[78]櫻井謙司, Al Amin
Abdullah, 櫻井貴志, 杉山正和, 中野義昭, "InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討 (Fabrication of InP-based arrayed waveguide gratings and
integration trial with active devices by MOVPE selective-area growth)", 電子情報通信学会技術研究報告(フォトニックネットワーク研究会), PN2004-99, pp. 7-10, 2005年1月28日.
[79]宋海政, 宋学良, 杉山正和, 中野義昭, 霜垣幸浩, "選択成長を用いた表面反応速度の解析:GaAs MOCVDにおける温度・基板面方位の効果", 化学工学会第70年会 講演要旨集(名古屋大学), M302, 489, 2005年3月24日.
[80]中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "時間変調成長による化合物半導体MOVPE法の表面反応メカニズム解析", 化学工学会第70年会 講演要旨集(名古屋大学),
M303, 494, 2005年3月24日.
[81]塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭,
"InGaAsP選択成長における量子井戸発光波長の予測", 化学工学会第70年会 講演要旨集(名古屋大学), M301,
2005年3月24日.
[82]宋 海政，宋 学良，杉山正和，中野義昭，霜垣幸浩，”選択成長を用いた表面反応速度の解析:GaAs MOCVDにおける温度・基板面方位の効果”，化学工学会第70年会 講演要旨集(名古屋大学), M302, 2005年3月24日.
[83]中野貴之，杉山正和，中野義昭，霜垣幸浩，”時間変調成長による化合物半導体MOVPE法の表面反応メカニズム解析”， 化学工学会第70年会 講演要旨集(名古屋大学), M303, 2005年3月24日.
[84]帆足英二，平田洋介，清水泉介，藤江 誠，杉山正和，幸田清一郎，”超臨界水中の固体粒子群の酸化反応解析”，化学工学会第70年会 講演要旨集(名古屋大学), C115,
2005年3月24日.
[85]百瀬 健，大久保智弘，杉山正和，霜垣幸浩“超臨界CO2を用いたCu薄膜堆積:製膜過程の可視化(2)”，化学工学会第70年会 講演要旨集(名古屋大学), A315,
2005年3月24日.
[86]石井達也，百瀬 健，杉山正和，霜垣幸浩，“超臨界CO2を用いたTa化合物薄膜形成”， 化学工学会第70年会
講演要旨集(名古屋大学), A316, 2005年3月24日.
[87]櫻井謙司, アルアミン
アブドゥッラー, 塩田倫也, 杉山正和, 中野義昭, "選択成長による光合分波器と半導体光増幅器の集積化 (Selective area grown semiconductor optical amplifier integrated
demultiplexer)", 電子情報通信学会総合大会(大阪大学)講演論文集, C-3-19, p. 189, 2005年3月21日.
[88]広井典良, 薗部忠, 竹中充, 藤田博之, 中野義昭, "光IC用高密度ピッチ変換光ファイバアレイ"OPLEAF"の開発 (Development of
"OPLEAF", pitch-conversion dense fiber array for photonic integrated
circuits)", 電子情報通信学会総合大会(大阪大学)講演論文集, C-3-30, p. 200, 2005年3月22日.
[89]広井典良, 薗部忠, 藤田博之, 竹中充, 中野義昭, "光IC用高密度ピッチ変換光ファイバアレイの開発 (Development of pitch conversion optical fiber array for connecting
optical IC and fibers)", 第52回応用物理学関係連合講演会(埼玉大学), 29a-ZR-8, 2005年3月29日.
[90]清水大雅, 中野義昭, "半導体／強磁性金属ハイブリッドによる光通信波長帯導波路型光アイソレータ(Waveguide
optical isolator using semiconductor/ferromagnet hybrid structure for optical
telecommunication)", 第52回応用物理学関係連合講演会(埼玉大学), 30p-YD-8, 2005年3月30日.
[91]竹中充, モーラ・レイバン, 中野義昭, "多モード干渉カプラ型双安定レーザおよび半導体光増幅器を用いた信号再生波長変換器の検討 (Regenerative wavelength conversion using multimode interference
bistable laser diodes with semiconductor optical amplifiers)", 第52回応用物理学関係連合講演会(埼玉大学),
31p-ZQ-7, 2005年3月31日.
[92]清水大雅, 中野義昭, "InGaAsP/InP半導体光増幅器導波路におけるTEモード非相反損失現象の初の実証 (First demonstration of TE mode nonreciprocal propagation in an
InGaAsP/InP active waveguide)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZQ-10, 2005年3月31日.
[93]イットフーチョン, 宋学良, 張臻瑞, 宋海政, 杉山正和, 中野 義昭, "マッハ・ツェンダ型SOA全光スイッチにおける4バンドギャップモノリシック集積 (Four-Bandgap Energy Monolithic Integration in an SOA-MZI
All-Optical Switch)", 第52回応用物理学関係連合講演会(埼玉大学), 31p-ZQ-10, 2005年3月31日.
[94]宋学良, イットフーチョン, 張臻瑞, 宋海政, 杉山正和, 中野 義昭, "MOVPE選択成長による全光スイッチのOTDM DEMUX動作 (OTDM demultiplexing with
all-optical switches fabricated by selective-area MOVPE)", 第52回応用物理学関係連合講演会(埼玉大学),
31p-ZQ-9, 2005年3月31日.
[95]塩田倫也, アルアミン
アブドゥラー, 杉山正和, 霜垣幸浩, 中野義昭, "MOVPE選択成長のモデリングを用いたInGaAsP/InP系選択成長の特性予測 (Predictive modeling
of the properties of InGaAsP/InP grown by selective area metal-organic vapor
phase epitaxy)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZM-4, 2005年3月31日.
[96]雨宮智宏, 清水大雅, 中野義昭, "TMモード非相反伝搬損失導波路の作製と実証 (Fabrication and demonstration of a TM mode nonreciprocal
propagation loss waveguide)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZQ-11, 2005年3月31日.
[97]大谷洋, チャイヤスィットカムトゥーンキティックル, 杉山正和, 中野義昭,
"MOVPE成長GaN/AlN多重量子井戸中のサブバンド間遷移に寄与する電子密度の評価 (Estimation of carrier density contributing to intersuband
transition in AlN/GaN MQWs grown by MOVPE)", 第52回応用物理学関係連合講演会(埼玉大学), 31p-L-2, 2005年3月31日.
[98]宋海政, 宋学良, 杉山正和, 中野義昭, 霜垣幸浩, "MOVPE GaAs選択成長の表面反応における基板off角の影響 (The influence of substrate misorientation on surface reaction
kinetics of GaAs selective area MOVPE)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZM-3, 2005年3月31日.
[99]中野貴之, 杉山正和, 中野義昭, 霜垣幸浩,
"MOVPE法における結晶成長中での表面反応メカニズムの解明(4) (Investigation
of surface reaction mechanism during crystal growth in MOVPE 4)", 第52回応用物理学関係連合講演会(埼玉大学),
1a-ZM-1, 2005年4月1日.
[100]
張臻瑞, 宋学良, イットフーチョン, 竹中充, 杉山正和, 中野 義昭,
"GRIN-SCH構造によるMOVPE選択成長光導波路の内部損失低減 (Internal loss reduction by GRIN-SCH structure in optical
waveguides prepared using MOVPE selective area growth)", 第52回応用物理学関係連合講演会(埼玉大学),
1p-ZQ-4, 2005年4月1日.
その他
Others
[101]
Yoshiaki
Nakano, Masakazu Sugiyama, Hiromasa Shimizu, Eric Gouardes, Mitsuru Takenaka,
Maura Raburn, Jesse Darja, Foocheong Yit, and Xiaoping Zhou, "Semiconductor
photonic networking devices ﾐresearch toward
digital photonics", Proceedings of International Symposium on Electronics
for Future Generations, pp. 437-442, Tokyo, March 10-11, 2004.
[102]
Masakazu
Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki, Ichitaro Waki, Ho-Jin Oh,
Xueliang Song, Abdullah Al Amin, Takafumi Ohtsuka, Takayuki Nakano, and
Chaiyasit Kumtornkittikul, "Advanced metalorganic vapor phase epitaxy
technology for monolithic integration of photonic devices", Proceedings of
International Symposium on Electronics for Future Generations, pp. 151-155,
Tokyo, March 10-11, 2004.
[103]
中野義昭, "2004年光ファイバー通信会議(OFC2004)の概要", オプトロニクス,
vol. 23, no. 5, pp. 110-112, 2004年5月10日.
[104]
中野義昭, 竹中充,
"リポート国際会議 OFC2004 (デバイス)",
光産業技術振興協会 Opto News (オプトニューズ), no.4 (通巻142号), pp.
38-39, 2004年7月1日.
[105]
Xueliang Song,
Foo Cheong Yit, Zhenrui Zhang, Masakazu Sugiyama, and Yoshiaki Nakano,
"SOA-integrated MZI all-optical switches fabricated by selective area
MOVPE", Abstracts of the 2004 JST CREST Symposium on Functional Evolution
of Materials and Devices Based on Electron/Photon Related Phenomena (FEMD), p.
65, Tokyo, September 29-30, 2004.
[106]
Hiromasa
Shimizu, Tomohiro Amemiya, Yoshiaki Nakano, and Masaaki Tanaka,
"Fabrication of a TE mode semiconductor waveguide-type optical isolator
based on nonreciprocal loss", Abstracts of the 2004 JST CREST Symposium on
Functional Evolution of Materials and Devices Based on Electron/Photon Related
Phenomena (FEMD), p. 64, Tokyo, September 29-30, 2004.
[107]
Chaiyasit
Kumturnkittikul, Hiroshi Otani, Yukihiro Shimogaki, Masakazu Sugiyama, and
Yoshiaki Nakano, "MOVPE growth of GaN/AlN multiple quantum wells and
waveguide fabrication for ultrafast photonic devices", Abstracts of the
2004 JST CREST Symposium on Functional Evolution of Materials and Devices Based
on Electron/Photon Related Phenomena (FEMD), p. 63, Tokyo, September 29-30, 2004.
[108]
Yoshiaki
Nakano, "Innovative photon-controlling devices based on artificial optical
properties of semiconductors -exploration towards digital photonics",
Abstracts of the 2004 JST CREST Symposium on Functional Evolution of Materials
and Devices Based on Electron/Photon Related Phenomena (FEMD), pp. 56-59,
Tokyo, September 29-30, 2004.
[109]
中野義昭, "最先端プロセス技術で創る半導体光デバイス集積回路", 先端知機能材料デバイスラボラトリーズ設立記念フォーラム. 2004年11月5日.
[110]
中野義昭, "デジタルフォトニクスに向けた半導体光デバイス・光集積回路", 産学官連携ビジネス交流会, 学術総合センター, 2004年12月6日.
[111]
Abdullah Al
Amin, "WDMサブシステムの半導体モノリシック集積化に関する研究 (Research on monolithic integration of WDM
subsystem on InP)", 東京大学 固体エレクトロニクス・オプトエレクトロニクス研究発表会講演資料集, pp. 89-96, 2005年2月28日.
[112]
大塚節文, "分布帰還型レーザーダイオードの活性回折格子に向けたマストランスポートInAsP量子細線に関する研究 (Study on
mass-transported InAsP quantum wire for the active grating of the distributed
feedback laser diodes)", 東京大学 固体エレクトロニクス・オプトエレクトロニクス研究発表会講演資料集, pp. 81-88, 2005年2月28日.