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Œ¤‹†˜_•¶/Journal Papers (2017.4.1-2018.3.31)

  1. Kayo Koike, Kazuhiro Yamamoto, Satoshi Ohara, Tomoka Kikitsu, Kazunari Ozasa, Shinichiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, and Katsushi Fujii: gEffects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytesh, International Journal of Hydrogen Energy, vol. 42, Issue 15, pp. 9493-9499, April 13 (2017).
  2. Tohma Watanabe, Miyuki Takeuchi, Yoshiaki Nakano, and Masakazu Sugiyama: gMeasurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111)h, Journal of Crystal Growth, vol. 464, pp. 33-38, April 15 (2017).
  3. Hirofumi Cho, Kasidit Toprasertpong, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gStability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cellsh Journal of Crystal Growth, vol. 464, pp. 86-93, April 15 (2017).
  4. Michihiro Suzuki, Akihiro Nakamura, Yoshiaki Nakano, and Masakazu Sugiyama: gMechanism of stress control for GaN growth on Si using AlN interlayersh, Journal of Crystal Growth, vol. 464, pp. 148-152, April 15 (2017).
  5. Akihiro Nakamura, Michihiro Suzuki, Katsushi Fujii, Yoshiaki Nakano, and Masakazu Sugiyama: gLow-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathodeh, Journal of Crystal Growth, vol. 464, pp. 180-184, April 15 (2017).
  6. Kasidit Toprasertpong, Tomoyuki Inoue, Amaury Delamarre, Kentaroh Watanabe, Jean-Francois Guillemoles, Masakazu Sugiyama, and Yoshiaki Nakano: gElectroluminescence-based quality characterization of quantum wells for solar cell applicationsh, Journal of Crystal Growth, vol. 464, pp. 94-99, April 15 (2017).
  7. Hongbo Wang, Hassanet Sodabanlu, Yoshiaki Daigo, Takuya Seino, Takashi Nakagawa, and Masakazu Sugiyama: gImproved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrateh, Journal of Crystal Growth, vol. 465, pp. 12-17, May 1 (2017).
  8. Samir Ghosh, Yuto Kawabata, Takuo Tanemura, and Yoshiaki Nakano: gPolarization-analyzing circuit on InP for integrated Stokes vector receiverh, OSA Optics Express, vol. 25, no. 11, pp. 12303-12310, May 17 (2017).
    (doi:10.1364/OE.25.012303)
  9. Cai Liu, Akihito Kumamoto, Michihiro Suzuki, Hongbo Wang, Hassanet Sodabanlu, Masakazu Sugiyama, and Yoshiaki Nakano: gEffects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Sih, Semiconductor Science and Technology, vol. 32, pp. 075003-1-10, June 8 (2017).
  10. Rui Tang, Takuo Tanemura, and Yoshiaki Nakano: gIntegrated reconfigurable unitary optical mode converter using MMI couplersh, IEEE Photonics Technology Letters, vol. 29, no. 12, pp. 971-974, June 15 (2017).
    (doi: 10.1109/LPT.2017.2700619)
  11. Heng Zhong, Katsushi Fujii, and Yoshiaki Nakano: gEffect of KHCO3 concentration on electrochemical reduction of CO2 on copper electrodeh, Journal of the Electrochemical Society, vol. 164, no. 9, pp. F923-F927, July 5 (2017).
  12. Kaiyin Feng, Masaya Nishimoto, Chuanqing Yu, Sueda Saylan, Richard J. E. Taylor, Takuo Tanemura, and Yoshiaki Nakano: gWaveguide-coupled metal-clad cavity with integrated feedback stubh, Japanese Journal of Applied Physics, vol. 56, pp. 082201-1-5, July 10 (2017).
    (doi: 10.7567/JJAP.56.082201)
  13. Hao Xu, Kasidit Toprasertpong, Amaury Delamarre, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshiaki Nakano, and Masakazu Sugiyama: gEffect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cellsh, Japanese Journal of Applied Physics, vol. 56, no. 8S2, 08MC06-1-6, July 11 (2017).
  14. Warakorn Yanwachirakul, Naoya Miyashita, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshitaka Okada, and Yoshiaki Nakano: gDesign of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gaph, Japanese Journal of Applied Physics, vol. 56, no. 8S2, pp. 08MA04-1-7, July 13 (2017).
  15. Atsuhiko Fukuyama, Kouki Matsuochi, Tsubasa Nakamura, Hideaki Takeda, Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano, Hidetoshi Suzuki, and Tetsuo Ikari: gInvestigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p-i-n GaAs solar cellsh, Japanese Journal of Applied Physics, vol. 56, pp. 08MC07-1-5, July 13 (2017).
  16. Kasidit Toprasertpong, Stephen M. Goodnick, Yoshiaki Nakano, and Masakazu Sugiyama: gEffective mobility for sequential carrier transport in multiple quantum well structuresh, Physical Review B, vol. 96, issue 7, pp. 075441-1-10, August 15 (2017).
  17. Hiroshi Hashiba, Hiroki K. Sato, Satoshi Yotsuhashi, Katsushi Fujii, Masakazu Sugiyama, and Yoshiaki Nakano: gA broad parameter range for selective methane production with bicarbonate solution in electrochemical CO2 reductionh, Sustainable Energy & Fuels, vol. 1, issue 8, pp. 1734-1739, August 16 (2017).
  18. Yi Xiao, Richard J. E. Taylor, Chuanqing Yu, Kaiyin Feng, Takuo Tanemura, and Yoshiaki Nakano: gRoom-temperature capsule-shaped wavelength-scale metal-clad laser with enhanced side mode suppressionh, Applied Physics Letters, vol. 111, pp. 081107-1-4, August 23 (2017).
  19. Peng Zhou, Wenhui Zhan, Masaru Mukaikubo, Yoshiaki Nakano, and Takuo Tanemura: gReflective semiconductor optical amplifier with segmented electrodes for high-speed self-seeded colorless transmitterh, OSA Optics Express, vol. 25, no. 23, pp. 28547-28555, November 13 (2017).
    (doi:10.1364/OE.25.028547)
  20. Mohiyuddin Kazi, Samir Ghosh, Hassanet Sodabanlu, Kentaro Suzuki, Masakazu Sugiyama, Takuo Tanemura, and Yoshiaki Nakano: gHigh-speed carrier-injection-based polarization controller with InGaAlAs/InAlAs multiple-quantum wellsh, IEEE Photonics Technology Letters, vol. 29, no. 22, pp. 1951-1954, November 15 (2017).
    (doi: 10.1109/LPT.2017.2757526)
  21. Jiaqi Zhang, Yuji Kosugi, Akira Otomo, Yoshiaki Nakano, and Takuo Tanemura: gActive metasurface modulator with electro-optic polymer using bimodal plasmonic resonanceh, OSA Optics Express, vol. 25, no. 24, pp. 30304-30311, November 27 (2017).
    (doi.org/10.1364/OE.25.030304)
  22. Juan Zhang, Changzheng Sun, Bing Xiong, Jian Wang, Zhibiao Hao, Lai Wang, Yanjun Han, Hongtao Li, Yi Luo, Yi Xiao, Chuanqing Yu, Takuo Tanemura, Yoshiaki Nakano, Shimao Li, Xinlun Cai, and Siyuan Yu: gElectrically pumped orbital angular momentum (OAM) laser at telecom wavelength", arXiv:1712.077882, pp. 1-9, December 21 (2017).
  23. Kasidit Toprasertpong, Tomoyuki Inoue, Yoshiaki Nakano, and Masakazu Sugiyama: gInvestigation and modeling of photocurrent collection process in multiple quantum well solar cellsh, Solar Energy Materials and Solar Cells, vol. 174, pp. 146-156, January (2018).
  24. Samir Ghosh, Takuo Tanemura, Yuto Kawabata, Kazuhiro Katoh, Kazuro Kikuchi, and Yoshiaki Nakano: gDecoding of multilevel Stokes-vector modulated signal by polarization-analyzing circuit on InPh, IEEE/OSA Journal of Lightwave Technology, vol. 36, no. 2, pp. 187-194, January 15 (2018).
    (doi: 10.1109/JLT.2018.2791623)
  25. Warakorn Yanwachirakul, Naoya Miyashita, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshitaka Okada, Masakazu Sugiyama, and Yoshiaki Nakano: gCharacterization of InGaAs/GaAsN multiple quantum well with flat conduction band for improving carrier transport in multijuction solar cellh, Proceedings of SPIE, vol. 10527, pp. 105270E-1-10, February 16 (2018).
  26. Takahiro Suganuma, Samir Ghosh, Mohiyuddin Kazi, Ryoma Kobayashi, Yoshiaki Nakano, and Takuo Tanemura: Monolithic InP Stokes vector receiver with multiple-quantum-well photodetectorsh, IEEE/OSA Journal of Lightwave Technology, vol. 36, no. 5, pp. 1268-1274, March 1 (2018).

‘Û‰ï‹c˜_•¶/ International Conferences (2017.4.1-2018.3.31)

  1. Yuuki Imazeki, Youhei Iwai, Akihiro Nakamura, Kayo Koike, Kentaroh Watanabe1, Katsushi Fujii, Masakazu Sugiyama, and Yoshiaki Nakano: ghoto-induced gain of open-circuit-potential (OCP) in GaN photoelectrodes for characterizing defects and photoelectrochemical activityh, 2017 MRS Spring Meeting and Exhibit, ES7.9.03, Phoenix, Arizona, April 19 (2017).
  2. Mohiyuddin Kazi, Samir Ghosh, Hassanet Sodabanlu, Takuo Tanemura, and Yoshiaki Nakano: g"Electrically pumped with InGaAlAs/ InAlAs multiple-quantum-well phase shifterh, Compoud Semiconductor Week 2017 (CSW 2017, 29th International Conference on Indium Phosphide and Related Materials, IPRM, 44th International Symposium on Compound Semiconductors, ISCS), C1.6, pp. 1-2, Berlin, Germany, May 15 (2017).
  3. Boram Kim, Oliver Supplie, Tohma Watanabe, Agnieszka Paszuk, Thomas Hannappel, Yoshiaki Nakano, and Masakazu Sugiyama: gDouble-layer step formation on Si (100) surfaces by moderate-temperature annealing coupled with TBA exposureh, Compoud Semiconductor Week 2017 (CSW 2017, 29th International Conference on Indium Phosphide and Related Materials, IPRM, 44th International Symposium on Compound Semiconductors, ISCS), P1.24, pp. 1-2, Berlin, Germany, May 15 (2017).
  4. Agnieszka Paszuk, Oliver Supplie, Sebastian Br ckner, Matthias May, Andreas N gelein, Boram Kim, Tohma Watanabe, Yoshiaki Nakano, Masakazu Sugiyama, Peter Kleinschmidt, and Thomas Hannappel: gIn-situ control over dimer orientation on Si(100) surfaces in arsenic ambient and its impact on the sublattice orientation of subsequently grown GaPh, Compoud Semiconductor Week 2017 (CSW 2017, 29th International Conference on Indium Phosphide and Related Materials, IPRM, 44th International Symposium on Compound Semiconductors, ISCS), D6.6, pp. 1-2, Berlin, Germany, May 17 (2017).
  5. Kentaroh Watanabe, Erina Nagaoka, Daiji Yamashita, Kasidit Toprasertpong, Yoshiaki Nakano, and Masakazu Sugiyama: gDevelopment of GaAs//Si current-balanced dual junction solar cell integrated by surface-activated bondingh, Abstract, 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 17GP-08, p. 53, Tokyo, Japan, May 17 (2017).
  6. Rui Tang, Takuo Tanemura, and Yoshiaki Nakano: gReconfigurable integrated MIMO optical mode demultiplexer using MMI couplersh, Technical Digest, Conference on Lasers and Electro-Optics (CLEO 2017), JTh2A.116, pp. 1-2, San Jose, California, May 18 (2017).
  7. Yuuki Imazeki, Yohei Iwai, Akihiro Nakamura, Kayo Koike, Shin-ichiro Sato, Takeshi Ohshima, Katsushi Fujii, Masakazu Sugiyama, and Yoshiaki Nakano: gBand alignment at n-GaN/electrolyte interface explored by photo-induced offset of open-circuit potential for efficient water splittingh, Meeting Abstracts, 231st Spring Meeting of the Electrochemical Society, Symposium G01 (Processes at the Semiconductor Solution Interfaces 7), Paper 1203, p. 1, New Orleans, Louisiana, May 29 (2017).
  8. Yuuki Imazeki, Yohei Iwai, Akihiro Nakamura, Kayo Koike, Shin-ichiro Sato, Takeshi Ohshima, Katsushi Fujii, Masakazu Sugiyama, and Yoshiaki Nakano: gBand alignment at n-GaN/electrolyte interface explored by photo-induced offset of open-circuit potential for efficient water splittingh, The Electrochemical Society (ECS) Transactions, vol. 77, no. 4, pp. 25-30, June 1 (2016).
  9. Tatsuya Nakata, Kentaroh Watanabe, Hassanet Sodabanlu, Daiki Kimura, Naoya Miyashita, Yoshitaka Okada, Yoshiaki Nakano, and Masakazu Sugiyama: gAnalysis of deposited residues and its cleaning process on GaAs substrate after epitaxial lift-offh, Conference Proceedings, the 44th IEEE Photovoltaic Specialists Conference (PVSC 44), B50, pp. 1-4 Washington D.C., June 27 (2017).
  10. Kasidit Toprasertpong, Boram Kim, Yoshiaki Nakano, and Masakazu Sugiyama: gCarrier collection model and design rule for quantum well solar cellsh, Conference Proceedings, the 44th IEEE Photovoltaic Specialists Conference (PVSC 44), pp. 1-4, Washington D.C., June 28 (2017).
  11. Hassanet Sodabanlu, Kentaroh Watanabe, Akinori Ubukata, Takeyoshi Sugaya, Masakazu Sugiyama, and Yoshiaki Nakano: gExtremely high-speed GaAs growth by MOVPE for low-cost PV applicationh, Conference Proceedings, the 44th IEEE Photovoltaic Specialists Conference (PVSC 44), pp. 1-6, Washington D.C., June 28 (2017).
  12. Boram Kim, Kasidit Toprasertpong, Oliver Supplie, Agnieszka Paszuk, Thomas Hannappel, Yoshiaki Nakano, and Masakazu Sugiyama: gEfficiency of GaAsP/Si two-junction solar cells with multi-quantum wells: a realistic modeling with carrier collection efficiencyh, Conference Proceedings, the 44th IEEE Photovoltaic Specialists Conference (PVSC 44), I23, pp. 1-4, Washington D.C., June 29 (2017).
  13. Agnieszka Paszuk, Oliver Supplie, Sebastian Bruckner, Matthias M. May, Anja Dobrich, Andreas Nagelein, Boram Kim, Yoshiaki Nakano, Masakazu Sugiyama, Peter Kleinschmidt, and Thomas Hannappel: gIn situ control over the sublattice orientation of heteroepitaxially grown single-domain GaP/Si:As virtual substrates for tandem absorbersh, Conference Proceedings, the 44th IEEE Photovoltaic Specialists Conference (PVSC 44), I31, pp. 1-5, Washington D.C., June 29 (2017).
  14. Lin Zhu, Anurag Reddy, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, and Hidefumi Akiyama: gDesign of InGaP/GaAs/InGaAs multi-junction cells with reduced layer thicknesses using light-trapping rear textureh, Conference Proceedings, the 44th IEEE Photovoltaic Specialists Conference (PVSC 44), I31, pp. 1-5, Washington D.C., June 30 (2017).
  15. Akinori Ubukata, Hassanet Sodabanlu, Kentaroh Watanabe, Syuichi Koseki, Yoshiki Yano, Toshiya Tabuchi, Takeyoshi Sugaya, Koh Matsumoto, Yoshiaki Nakano, and Masakazu Sugiyama: gExtremely rapid GaAs growth by MOVPE for low-cost PV applicationsh, Abstract, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21)/18th US Workshop on Organometallic vapor phase epitaxy (OMVPE-18), Santa Fe, New Mexico, August 1 (2017).
  16. Yi Xiao, Richard J. E. Taylor, Chuanqing Yu, Takuo Tanemura, and Yoshiaki Nakano: gRoom-temperature capsule-shaped wavelength-scale metal-clad laser operating at 1550 nmh,Technical Digest, 12th Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR) / 22nd Optoelectronics and Communications Conference (OECC) / 5th Photonics Global Conference (PGC), Oral 2-2M-5 (s1766), pp. 1-2, Singapore, August 2 (2017).
  17. Rui Tang, Takuo Tanemura, and Yoshiaki Nakano: gRobust reconfigurable optical mode mux/demux using multiport drectional couplersh, Technical Digest, 12th Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR) / 22nd Optoelectronics and Communications Conference (OECC) / 5th Photonics Global Conference (PGC), P3-085 (s2385), pp. 1-3, Singapore, August 3 (2017).
  18. Yi Xiao, Richard J. E. Taylor, Kaiyin Feng, Takuo Tanemura, and Yoshiaki Nakano: gDesign of waveguide-coupling structure for wavelength-scale capsule-shaped metal-clad laserh, Abstract Book, The 11th International Nano-Optoelectronics Workshop (iNOW 2017), TuP2, pp. 96-97, Tianjin/Qianfan/Chengde, China, August 8 (2017).
  19. Juan Zhang, Changzheng Sun, Bing Xiong, Jian Wang, Zhibiao Hao, Lai Wang, Yanjun Han, Hongtao Li, Yi Luo, Yi Xiao, Peng Zhou, Takuo Tanemura, and Yoshiaki Nakano: gDesign of integrated orbital angular momentum (OAM) emitter based on AlGaInAs/InP epitaxial waferh, Abstract Book, The 11th International Nano-Optoelectronics Workshop (iNOW 2017), WeP12, pp. 144-145, Tianjin/Qianfan/Chengde, China, August 9 (2017).
  20. Chuanqing Yu, Yi Xiao, Richard J. E. Taylor, Baifu Zhang, Kaiyin Feng, Takuo Tanemura, and Yoshiaki Nakanoh,h Electrically pumped metallic cavity micro laser with InAlAs electron blocking layerh, Technical Digest, the 24th Congress of the International Commission for Optics (ICO-24), Tu1J-02, pp. 1-2, Tokyo, Japan, August 22 (2017).
  21. Jiaqi Zhang, Yuji Kosugi, Yoshiaki Nakano, and Takuo Tanemura: gNumerical design of surface-normal plasmonic modulator with electro-optic polymerh, Technical Digest, the 24th Congress of the International Commission for Optics (ICO-24), Th1J-02, pp. 1-2, Tokyo, Japan, August 24 (2017).
  22. Hiroaki Maruyama, Akihiro Nakamura, Yoshiaki Nakano, Katsushi Fujii, Masakazu Sugiyama: gPt co-catalyst by photo-electrodeposition on tandem nitride semiconductor photocathode for zero-bias solar water splittingh, Proceedings of nanoGe September Meeting 2017, SF1: Material and Device Innovations for the Practical Implementation of Solar Fuels (SolarFuel 17), SF1.4.2-O5, Barcelona, Spain, September 5 (2017).
  23. Akihiro Nakamura, Hiroaki Maruyama, Yoshiaki Nakano, Katsushi Fujii, Masakazu Sugiyama: gPolarization engineered photocathode using InGaN/AlN heterostructure for zero-bias solar water splittingh, Proceedings of nanoGe September Meeting 2017, SF1: Material and Device Innovations for the Practical Implementation of Solar Fuels (SolarFuel 17), SF1.4.1-O7, Barcelona, Spain, September 5 (2017).
  24. Takahiro Suganuma, Samir Ghosh, Mohiyuddin Kazi, Ryoma Kobayashi, Yoshiaki Nakano, and Takuo Tanemura: gFully integrated Stokes vector receiver with MQW-based photodetectors on InPh, Proceedings, 43rd European Conference on Optical Communication (ECOC 2017), M.1.C.4, pp. 1-3, Gothenburg, Sweden, September 18 (2017).
  25. Anurag G. Reddy, Lin Zhu, Kentorah Watanabe, Masakazu Sugiyama, Hidefumi Akiyama, and Yoshiaki Nakano: gFeasibility of thin-film InGaP/GaAs/InGaAs multi-junction solar cells using light trapping for low-cost and high-efficiency applicationsh, The 33rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2017), 1AO.1.4, pp. 1-4, Amsterdam, the Netherlands, September 25 (2017).
  26. Hassanet Sodabanlu, Amaury Delamarre, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gAn alternative methodology to investigate properties of minority carriers: effects of n-dopant speciesh, The 33rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2017), 1CV.3.22, pp. 96-98, Amsterdam, the Netherlands, September 27 (2017).
  27. Daiji Yamashita, Hiroshi Nakao, Yu Yonezawa, Yoshiyasu Nakashima, Yasuyuki Ota, Kensuke Nishioka, and Masakazu Sugiyama: gA new solar to hydrogen conversion system with high-efficiency and flexibilityh, 6th IEEE International Conference on Renewable Energy Research and Applications (ICRERA 2017), paper 150, San Diego, California, November 7 (2017).
  28. Akinori Ubukata, Hassanet Sodabanlu, Kentaroh Watanabe, Shuichi Koseki, Yoshiki Yano, Toshiya Tabuchi, Takeyoshi Sugaya, Koh Matsumoto, Yoshiaki Nakano, and Masakazu Sugiyama: gExtremely rapid growth of GaAs by MOVPE for low-cost PV applications (’áƒRƒXƒgGaAs‘¾—z“d’r‚Ì‚½‚ß‚Ì’´‚‘¬¬’·)h, Extended Abstracts of the 36th Electronic Materials Symposium (EMS-36), Th2-12, Nagahama, Shiga, Nov. 9 (2017).
  29. Tsubasa Nakamura, Hideaki Takeda, Jianan Lu, Hidetoshi Suzuki, Tetsuo Ikari, Kasidit Topraserpong, Masakazu Sugiyama, and Atsuhiko Fukuyama: gInvestigation of carrier thermal excitation process in GaAs-inserted InGaAs/GaAsP superlattice solar cell (GaAs’†ŠÔ‘w‚ð‘}“ü‚µ‚½InGaAs/GaAsP’´ŠiŽq‘¾—z“d’r‚̃LƒƒƒŠƒA”M—ã‹N‰ß’ö‚Ì’²¸)h, Extended Abstracts of the 36th Electronic Materials Symposium (EMS-36), Th3-3, Nagahama, Shiga, Nov. 9 (2017).
  30. Kasidit Toprasertpong, Amaury Delamarre, Kentaroh Watanabe, Yoshiaki Nakano, Jean-Francois Guillemoles, and Masakazu Sugiyama: gElectroluminescence and reciprocity relation in multiple quantum well solar cellsh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 6TuO9.6, p. 212, Shiga, Japan, November 14 (2017).
  31. Masakazu Sugiyama, Takanori Usuki, Kasidit Toprasertpong, Kentaroh Watanabe, and Yoshiaki Nakano: gStep-tunnel InGaAs/GaAsP quantum well superlattice for 1.15-eV middle cell in 4-junction solar cellh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 3TuO5.3, p. 183, Shiga, Japan, November 14 (2017).
  32. Hideaki Takeda, Tsubasa Nakamura, Jianan Lu, Hidetoshi Suzuki, Kasidit Toprasertpong, Masakazu Sugiyama, Tetsuo Ikari, and Atsuhiko Fukuyama: gInvestigation of carrier transport mechanism in superlattice solar cells with strain relaxation layerh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 6TuO9.4, p. 210, Shiga, Japan, November 14 (2017).
  33. Tatsuya Nakata, Kentaroh Watanabe, Naoya Miyashita, Hassanet Sodabanlu, Yoshiaki Nakano, Yoshitaka Okada, and Masakazu Sugiyama: gThin-film multiple quantum wells solar cells fabricated by epitaxial lift off processh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 6TuO9.5, p. 211, Shiga, Japan, November 14 (2017).
  34. Kentaroh Watanabe, Hassanet Sodabanlu, Yoshiaki Nakano, Masakazu Sugiyama, and Kasidit Toprasertpong: gCurrent-matched design of GaAs//Si dual junction solar cells integrated by surface activated wafer bondingh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 3TuPo.124, Shiga, Japan, November 14 (2017).
  35. Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gGrowth of InGaAs(P) in planetary MOVPE reactor using TBA and TBP for photovoltaic applicationsh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 3TuPo.118, Shiga, Japan, November 14 (2017).
  36. Boram Kim, Oliver Supplie, Agnieszuka Pasazuk, Thomas Hannappel, Yoshiaki Nakano, and Masakazu Sugiyama: gMOVPE preparation of GaP template on Si (100) with in-situ reflectance anisotropy monitoring: impact of reactor contaminationh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 3TuPo.130, Shiga, Japan, November 14 (2017).
  37. Lin Zhu, Anurag Reddy, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, and Hidefumi Akiyama: gReduced-layer-thickness design of InGaP/GaAs/InGaAs solar cells using light-trapping texture mirrorh, 27th International Photovoltaic Science and Engineering Conference (PVSEC-27), 3ThPo.131, Shiga, Japan, November 14 (2017).
  38. Warakorn Yanwachirakul, Naoya Miyashita, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshitaka Okada, Masakazu Sugiyama, and Yoshiaki Nakano: gCharacterization of InGaAs/GaAsN multiple quantum well with flat conduction band for improving carrier transport in multijuction solar cellh, SPIE Conference 10527, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII (Part of SPIE Photonics West/OPTO), Paper 10527-14, San Francisco, California, January 31 (2018).
  39. Amaury Delamarre, Daniel Suchet, Nicolas Cavassilas, Yoshitaka Okada, Masakazu Sugiyama, and Jean-Fran ois Guillemoles: gNon-ideal nanostructured intermediate band solar cells with an electronic ratcheth, SPIE Conference 10527, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII (Part of SPIE Photonics West/OPTO), Paper 10527-27, San Francisco, California, February 1 (2018).
  40. Rui Tang, Takuo Tanemura, Samir Ghosh, Keijiro Suzuki, Ken Tanizawa, Kazuhiro Ikeda, Hitoshi Kawashima, and Yoshiaki Nakano: g(Top scored paper) Reconfigurable 3-channel all-optical MIMO circuit on silicon based on multi-plane light conversionh, Technical Digest USB, Conference on Optical Fiber Communication (OFC 2018), W1E.3, pp. 1-3, San Diego, California, March 14 (2018).

‘àE‰ðà˜_•¶/ Review Papers (2017.4.1-2018.3.31)

  1. Yoshiaki Nakano: g(Invited Talk) Integrated photonic polarization manipulation devices for new modulation formats in large-capacity short-reach optical interconnectsh, Huawei Workshop on Key Optical Communication Technologies in Client-side and Ultra-short Distance, 15:45-16:15, Yokohama, Japan, April 10, 2017 (2017).
  2. Masakazu Sugiyama: g(Invited) III-V compound semiconductor nano-epitaxial structures for high-efficiency photovoltaic and solar-to-chemical energy conversionh, The 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), F-08-3, Singapore, June 21 (2017).
  3. Ží‘º‘ñ•v, ’†–ì‹`º: •Î”g‘€ìŒõWσfƒoƒCƒXh, ƒtƒHƒgƒjƒNƒXƒjƒ…[ƒX(‰ž—p•¨—Šw‰ïƒtƒHƒgƒjƒNƒX•ª‰È‰ï‰ïŽ), vol. 3, no. 2, pp. 55-59, 2017”N8ŒŽ1“ú (2017).
  4. Yoshiaki Nakano, Masakazu Sugiyama, and Akihiro Nakamura: g(Invited Talk) Solar hydrogen by III-V semiconductor heterojunctionsh, Abstract Book, The 11th International Nano-Optoelectronics Workshop (iNOW 2017), SuA1, pp. 33-34, Tianjin/Qianfan/Chengde, China, August 6 (2017).
  5. Ží‘º‘ñ•v, ’†–ì‹`º: (µ‘Òu‰‰) WσtƒHƒgƒjƒNƒX‚É‚æ‚é•Î”g‘€ì^ƒ†ƒjƒ^ƒŠŒõ•ÏŠ·‰ñ˜H (Polarization manipulation and unitary optical conversion circuits by integrated photonics)h, “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ(WÏŒõƒfƒoƒCƒX‚Ɖž—p‹ZpŒ¤‹†‰ï), IPDA2017-2-10, pp. 45-50, ŽR‘㉷ò—Ú—žŒõ, 2017”N11ŒŽ10“ú (2017).
  6. Masakazu Sugiyama: g(Invited) InGaAs/GaAsP quantum well superlattice for 1.15-eV middle cell in 4-junction solar cellh, 2017 Workshop on Innovative Nanoscale Devices and Systems (WINDS 2017), Solar Cell Session 3, Kohala Coast, Hawaii, November 27 (2017).
  7. Ží‘º‘ñ•v: g(µ‘Òu‰‰) •Î”g•Ï•œ’²WÏ‘fŽq‚ÌŠJ”­‚ƃXƒg[ƒNƒX‹óŠÔ‚ðŠˆ—p‚µ‚½‘å—e—ÊŒõ’ÊM‚Ö‚Ì“WŠJh, ƒŒ[ƒU[Šw‰ïŠwpu‰‰‰ï‘æ38‰ñ”NŽŸ‘å‰ï, 26pIX7, ‹ž“sŽsŠ©‹ÆŠÙ‚݂₱‚ß‚Á‚¹, 2018”N1ŒŽ26“ú (2018).
  8. Yoshiaki Nakano: g(Invited Lecture) Renewable fuel: the pathway to sustainable civilizationh, JICA/M-JEED Invited Lecture at National University of Mongolia, Ulaanbaatar, Mongolia, February 27, 2018 (2018).
  9. ™ŽR³˜a: g(ˆË—Šu‰‰) ‘¾—zŒõ”­“d’áƒRƒXƒg‰»‚̃|ƒeƒ“ƒVƒƒƒ‹h, ‰»ŠwHŠw‰ï‘æ83”N‰ï u‰‰—vŽ|W, D116, ŠÖ¼‘åŠwç—¢ŽRƒLƒƒƒ“ƒpƒX, 2018”N3ŒŽ13“ú (2018).
  10. Masakazu Sugiyama: g(Invited) Next generation renewable energy systems powered by high-efficiency, low-cost photovoltaicsh, Abstract Book, Global Photovoltaics Conference (GPVC 2018), GaP-I-01, p. 169, Gwangju, Korea, March 15 (2018).
  11. Ží‘º‘ñ•v, ›À‹M”Ž, ƒSƒbƒVƒ… ƒTƒ~[ƒ‹, ’†–ì‹`º: g (µ‘Òu‰‰) InPWσXƒg[ƒNƒXƒxƒNƒgƒ‹’¼ÚŒŸ”gŽóMŠí (Monolithic InP Stokes vector direct-detection receiver)h, “dŽqî•ñ’ÊMŠw‰ï‘‡‘å‰ï(“Œ‹ž“d‹@‘åŠw), ƒGƒŒƒNƒgƒƒjƒNƒXu‰‰˜_•¶W1, C-4-9, p. 179, 2018”N3ŒŽ21“ú (2018).

ƒVƒ“ƒ|ƒWƒEƒ€EŒ¤‹†‰ïE‘å‰ï“™”­•\/ Symposium,etc... (2017.4.1-2018.3.31)

  1. ›À‹M”Ž, ’†–ì‹`º, Ží‘º‘ñ•v: gInPƒXƒg[ƒNƒXƒxƒNƒgƒ‹ŽóM‰ñ˜H‚ÌÝŒv‚Æ컌뷑ϫ‚ÉŠÖ‚·‚錟“¢ (Design and investigation on fabrication tolerance of InP Stokes vector receiver circuit)h, “dŽqî•ñ’ÊMŠw‰ï ŒõƒGƒŒƒNƒgƒƒjƒNƒX(OPE)Œ¤‹†ê–åˆÏˆõ‰ï, 2017”N4ŒŽŠúŒ¤‹†‰ïu‰‰—\eW, P2-10, p. 22, ƒŠƒ][ƒsƒA”MŠC, 2017”N4ŒŽ20“ú (2017).
  2. Peng Zhou, Masaru Mukaikubo, Yoshiaki Nakano, and Takuo Tanemura: g10-Gb/s self-seeded modulation experiment by using two-section RSOA (“ñ“d‹ÉRSOA‚É‚æ‚é10-Gb/sƒZƒ‹ƒtƒV[ƒfƒbƒg•Ï’²ŽÀŒ±)h, “dŽqî•ñ’ÊMŠw‰ï ŒõƒGƒŒƒNƒgƒƒjƒNƒX(OPE)Œ¤‹†ê–åˆÏˆõ‰ï, 2017”N4ŒŽŠúŒ¤‹†‰ïu‰‰—\eW, P2-4, p. 16, ƒŠƒ][ƒsƒA”MŠC, 2017”N4ŒŽ20“ú (2017).
  3. “n糓~”n, Γcä, Šâ–{•q, rì‘וF, ’†–ì‹`º, ™ŽR³˜a: gŒõŠwŒ°”÷‹¾ƒ}ƒjƒsƒ…ƒŒ[ƒVƒ‡ƒ“‚É‚æ‚é Si(111)ãInGaAs’Pˆêmicrodisc‚Ì“d—¬“dˆ³“Á«•]‰¿ (Evaluation of current-voltage characteristics of selectively-grown single InGaAs microdisc on Si (111) with an optical micro-manipulator)h, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 5a-C21-9, p. 13-033, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ5“ú (2017).
  4. ŽR‰º‘å”V, ™ŽR³˜a, ’†–ì‹`º: gƒgƒ‰ƒ“ƒXƒŒƒXƒRƒ“ƒo[ƒ^‚ð—p‚¢‚½‘¾—zŒõ-…‘f•ÏŠ·ƒVƒXƒeƒ€‚̃tƒFƒCƒ‹ƒZ[ƒtÝŒvŽè–@ŒŸ“¢ (Fail-safe design method of solar to hydrogen conversion systems with transformerless converters)h, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 6a-A401-3, p. 01-057, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ6“ú (2017).
  5. Mohiyuddin A. Kazi, Samir Ghosh, Hassanet Sodabanlu, Masakazu Sugiyama, Takuo Tanemura, and Yoshiaki Nakano: gFabrication of monolithic InGaAlAs/InAlAs MQW-based polarization controller (InGaAlAs/InAlAs‘½d—ÊŽqˆäŒËŒ^ƒ‚ƒmƒŠƒVƒbƒN•Î”g§ŒäŠí‚ÌŽŽì)h,h‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 6p-A410-8, p. 04-055, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ6“ú (2017).
  6. ƒg[ƒvƒ‰ƒT[ƒgƒ|ƒ“ ƒJƒVƒfƒBƒbƒg, ƒfƒDƒ‰ƒ}ƒŒ[ ƒAƒ‚ƒŠ, “n•ÓŒ’‘¾˜Y, ’†–ì‹`º, ƒWƒƒƒ“ƒtƒ‰ƒ“ƒ\ƒ ƒMƒ‹ƒ‚[, ™ŽR³˜a: g—ÊŽq\‘¢‘¾—z“d’r‚É‚¨‚¯‚éŒõ“d“I‘Š”½ŠÖŒW‚ÌŠg’£ (Extension of optoelectronic reciprocity relation in quantum structure solar cells)h, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 7p-S21-1, p. 12-271, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ7“ú (2017).
  7. Warakorn Yanwachirakul, Naoya Miyashita, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshitaka Okada, Masakazu Sugiyama, and Yoshiaki Nakano: gExtended carrier lifetime in InGaAs/GaNAs multiple quantum well solar cells with free-barrier conduction band structureh, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 7p-S21-10, p. 12-280, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ7“ú (2017).
  8. Hao Xu, Hassanet Sodabanlu, Kasidit Toprasertpong, Amaury Delamarre, Kentaroh Watanabe, Yoshiaki Nakano, and Masakazu Sugiyama: gHigh speed growth for GaAs solar cells with low V/III ratioh, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 7p-S21-14, p. 12-285, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ7“ú (2017).
  9. Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gEffects of growth temperature on properties of MOVPE grown InP-based solar cells (MOVPE¬’·InPŒn‘¾—z“d’r‚É‚¨‚¯‚鬒·‰·“x‚̉e‹¿)h, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 7p-S21-15, p. 12-286, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ7“ú (2017).
  10. ’†“c’B–ç, “n•ÓŒ’‘¾˜Y, ƒ\ƒ_[ƒoƒ“ƒ‹ ƒnƒbƒTƒlƒbƒg, ‹{‰º’¼–ç, ‰ª“cŽŠ’, ’†–ì‹`º, ™ŽR³˜a: gƒGƒsƒ^ƒLƒVƒƒƒ‹ƒŠƒtƒgƒIƒtH’ö‚É‚æ‚趂¶‚½GaAsŠî”Âã‘ÍÏ•¨‚ÌŒ‹»‰»ðŒ‚Ì•]‰¿ (Evaluation of the crystal formation from the residual deposition on the GaAs substrate after epitaxial lift-off process)h, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 7p-S21-21, p. 12-292, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ7“ú (2017).
  11. ’†Œ´‘ñ–ç, —é–Ø“¹—m, o‰Y“Žq, •S£Œ’, ™ŽR³˜a, ’†–ì‹`º, ‘šŠ_K_: gSiŠî”ÂãGaN¬’·‚É‚¨‚¯‚éAlN’†ŠÔ‘w‚ð—p‚¢‚½‰ž—ͧŒäƒƒJƒjƒYƒ€ (Mechanism of stress control for GaN growth on Si using AlN interlayers)h, ‘æ78‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 8p-A307-7, p. 13-304, •Ÿ‰ª‘Û‰ï‹cê, 2017”N9ŒŽ8“ú (2017).
  12. ¬—Ñ—³”n, ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, ™ŽR³˜a, ’†–ì‹`º, Ží‘º‘ñ•v: gInAlAsƒGƒbƒ`ƒXƒgƒbƒv‘w‚𓱓ü‚µ‚½InP/InGaAsPƒn[ƒtƒŠƒbƒW“±”g˜HŒ^•Î”g•ÏŠ·Ší‚ÌÝŒv‚ÆŽŽì (Design and fabrication of InP/InGaAsP half ridge polarization converter with InAlAs etch-stop layer)h, “dŽqî•ñ’ÊMŠw‰ïƒGƒŒƒNƒgƒƒjƒNƒXƒ\ƒTƒCƒGƒeƒB‘å‰ï(“Œ‹ž“sŽs‘åŠw)u‰‰˜_•¶W1, C-3-29, p. 117, 2017”N9ŒŽ14“ú (2017).
  13. ›À‹M”Ž, ƒSƒbƒVƒ… ƒTƒ~[ƒ‹, ƒJƒYƒB ƒ‚ƒqƒ†ƒfƒBƒ“, ¬—Ñ—³”n, ’†–ì‹`º, Ží‘º‘ñ•v: g‘½d—ÊŽqˆäŒËŒõŒŸoŠí‚ðWÏ‚µ‚½ InPƒXƒg[ƒNƒXƒxƒNƒgƒ‹ŽóM‰ñ˜H (Stokes vector receiver circuit with integrated MQW-based photodetectors on InP)h, “dŽqî•ñ’ÊMŠw‰ïƒGƒŒƒNƒgƒƒjƒNƒXƒ\ƒTƒCƒGƒeƒB‘å‰ï(“Œ‹ž“sŽs‘åŠw)u‰‰˜_•¶W1, C-3-28, p. 116, 2017”N9ŒŽ14“ú (2017).
  14. Samir Ghosh, Takuo Tanemura, and Yoshiaki Nakano: gExperimental demonstration of 4-level Stokes-vector signal detection by using InP polarization-analyzing circuit (InP•Î”g‰ð͉ñ˜H‚ð—p‚¢‚½4’lƒXƒg[ƒNƒXƒxƒNƒgƒ‹•Ï’²M†‚ÌŽóMŽÀŒ±)h, “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ(ƒŒ[ƒUE—ÊŽqƒGƒŒƒNƒgƒƒjƒNƒXŒ¤‹†‰ï, OCS, OPE•¹Ã), vol. 117, no. 265, LQE2017-48, pp. 37-42, ŒF–{÷‚Ì”nêéʉ‘, 2017”N10ŒŽ26“ú (2017).
  15. ›À‹M”Ž, ’†–ì‹`º, Ží‘º‘ñ•v: g4ƒ|[ƒgInPƒXƒg[ƒNƒXƒxƒNƒgƒ‹ŽóMŠí‚ÌÝŒv‚ÆŠ´“x“Á«‰ðÍ•]‰¿ (Design and sensitivity analysis of 4-port InP Stokes vector receiver )h, “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ(ŒõƒGƒŒƒNƒgƒƒjƒNƒXŒ¤‹†‰ï, OCS, LQE•¹Ã), vol. 117, no. 264, OPE2017-79, pp. 57-60, ŒF–{÷‚Ì”nêéʉ‘, 2017”N10ŒŽ27“ú (2017).
  16. ’†–ì‹`º, ˆäã‘å‰î, “Œ·—Tˆê, ”[•x‰ë–ç, ¼ŽRL•F, ¼”öTŽ¡: g (ƒ‰ƒ“ƒvƒZƒbƒVƒ‡ƒ“) WσtƒHƒgƒjƒNƒX`‚±‚ê‚Ü‚Å‚Æ¡Œãh, “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ(WÏŒõƒfƒoƒCƒX‚Ɖž—p‹ZpŒ¤‹†‰ï), ŽR‘㉷ò—Ú—žŒõ, 2017”N11ŒŽ9“ú (2017).
  17. ‘åìK—S, Ží‘º‘ñ•v, ’†–ì‹`º: g•Î”gˆË‘¶ˆÊ‘Š•Ï’²Ší‚É‚æ‚éInGaAsP/InPƒn[ƒtƒŠƒbƒW“±”g˜HŒ^Œõ•Î”g•ÏŠ·Ší‚Ì컋–—eŒë·‚ÌŒüã |’ñˆÄ‚ÆÝŒv| (Improving the fabrication tolerance of InGaAsP/InP half-ridge optical polarization converters by polarization dependent phase modulators -proposal and design-)h, “dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ(WÏŒõƒfƒoƒCƒX‚Ɖž—p‹ZpŒ¤‹†‰ï), IPDA2017-P28, pp. 14-15, ŽR‘㉷ò—Ú—žŒõ, 2017”N11ŒŽ10“ú (2017).
  18. Mohiyuddin Kazi, Samir Ghosh, Masakazu Sugiyama, Takuo Tanemura, and Yoshiaki Nakano: gExperimental investigation of QCSE-based Stokes vector modulator on InP (—ÊŽq•Â‚¶ž‚߃Vƒ…ƒ^ƒ‹ƒNŒø‰Ê‚ð—p‚¢‚½InPƒXƒg[ƒNƒXƒxƒNƒgƒ‹•Ï’²Ší‚ÌŽŽì‚ÆŽÀØ)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 17p-A404-11, p. 03-044, ‘ˆî“c‘åŠw, 2018”N3ŒŽ17“ú (2018).
  19. Jiaqi Zhang, Yuji Kosugi, Yoshiaki Nakano, and Takuo Tanemura: gNumerical study on surface-normal plasmonic modulator using EO polymer (“d‹CŒõŠwƒ|ƒŠƒ}[‚ð—p‚¢‚½‚’¼“üŽËŒ^ƒvƒ‰ƒYƒ‚ƒjƒbƒN•Ï’²Ší‚Ì”’l‰ðÍ)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 17p-A404-12, p. 03-045, ‘ˆî“c‘åŠw, 2018”N3ŒŽ17“ú (2018).
  20. ’†Œ´‘ñ–ç, o‰Y“Žq, •S£Œ’, ’†–ì‹`º, ™ŽR³˜a, ‘šŠ_K_: gSiŠî”ÂãGaN¬’·‚̉ž—͂ɑ΂·‚éAlGaN’†ŠÔ‘w‚Ì‘g¬E–ŒŒú‚̉e‹¿ (Effect of content and thickness of AlGaN interlayer on strain of GaN on Si substrate)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 17p-E202-8, p. 13-033, ‘ˆî“c‘åŠw, 2018”N3ŒŽ17“ú (2018).
  21. ¶•û‰f“¿, ‘ŠŒ´Œ’l, Hassanet Sodabanlu, ‘哇—²Ž¡, ›’J•–F, –î–ì—ÇŽ÷, “cŸºr–ç, ¼–{Œ÷, ’†–ì‹`º, ™ŽR³˜a: g’´‚‘¬¬’·GaAs‚̒ቷƒtƒHƒgƒ‹ƒ~ƒlƒZƒ“ƒX“Á« (Low temperature photoluminescence of GaAs grown at extremely high rate)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 17p-F214-1, p. 13-049, ‘ˆî“c‘åŠw, 2018”N3ŒŽ17“ú (2018).
  22. ‹àƒ{ƒ‰ƒ€, Oliver Supplie, Agnieszka Pasazuk, Thomas Hannappel, ’†–ì‹`º, ™ŽR³˜a: gMOVPE‚É‚æ‚éSi(100)Šî”Âã‚ÌGaP¬’·:”½ŽË—¦ˆÙ•û«•ªŒõ–@‚É‚æ‚éin-situ•\–ÊŠÏ‘ª (GaP heteroepitaxy on Si(100) substrate by MOVPE: surface analysis with in-situ RAS)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 17p-F214-4, p. 13-052, ‘ˆî“c‘åŠw, 2018”N3ŒŽ17“ú (2018).
  23. ‰ª“c“N–¾, ‹àƒ{ƒ‰ƒ€, Oliver Supplie, Agnieszka Pasazuk, Thomas Hannappel, ’†–ì‹`º, ™ŽR³˜a: gMOVPE‚É‚æ‚éSi(100)Šî”Âã‚ÌGaP ¬’·:Si•\–ÊÄ\¬ƒvƒƒZƒXðŒ‚ÌŒŸ“¢ (GaP heteroepitaxy on Si (100) substrate by MOVPE: effect of process parameters on Si surface reconstruction process)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 17p-F214-5, p. 13-053, ‘ˆî“c‘åŠw, 2018”N3ŒŽ17“ú (2018).
  24. ›ˆê‹P, ’†–ì‹`º, Ží‘º‘ñ•v: g1.3ƒÊm‘ÑŒõ‘—MŠí‚ÉŒü‚¯‚½InPWϕΔg‘½d‰ñ˜H‚ÌÝŒv (Design of polarization-multiplexing circuit on InP for O-band optical transmitter)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 18p-B203-5, p. 03-218, ‘ˆî“c‘åŠw, 2018”N3ŒŽ18“ú (2018).
  25. ¬™—D’n, ‰ª–{—L‹M, ŽR“cç—R”ü, ”ìŒãº’j, ŽR“crŽ÷, ‘å—F–¾, ŽO“c‹g˜Y, ’†–ì‹`º, Ží‘º‘ñ•v: gTEŒõ‚ð—p‚¢‚½ƒTƒu”g’·ŠiŽqŒ^Œõ•Ï’²Ší‚ÌÝŒv‚ÆŽŽì (Design and fabrication of optical modulator with subwavelength grating using TE light)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 18p-B203-6, p. 03-219, ‘ˆî“c‘åŠw, 2018”N3ŒŽ18“ú (2018).
  26. Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe1, Takeyoshi Sugaya, Yoshiaki Nakano, and Masakazu Sugiyama: gEffects of V/III ratio on the quality of GaAs grown by MOVPE with extremely-high growth rate (’´‚‘¬MOVPE¬’·GaAs‚ÌŒ‹»•iŽ¿‚É‚¨‚¯‚éV/III”ä‚̉e‹¿)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 19a-F310-3, p. 12-379, ‘ˆî“c‘åŠw, 2018”N3ŒŽ19“ú (2018).
  27. ’†“c’B–ç, “n•ÓŒ’‘¾˜Y, ‹{‰º’¼–ç, ƒ\ƒ_[ƒoƒ“ƒ‹ ƒnƒTƒlƒbƒg, ‰ª“cŽŠ’, ’†–ì‹`º, ™ŽR³˜a: gƒGƒsƒ^ƒLƒVƒƒƒ‹ƒŠƒtƒgƒIƒt‚É‚æ‚é”––Œ‘½d—ÊŽqˆäŒË‘¾—z“d’r‚ÌŠJ”­ (Thin-film multiple quantum wells solar cells fabricated by epitaxial lift-off process)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 19a-F310-6, p. 12-382, ‘ˆî“c‘åŠw, 2018”N3ŒŽ19“ú (2018).
  28. ²“¡³Š°, ¡ŠÖ—T‹M, “¡ˆäŽŽi, ’†–ì‹`º, ™ŽR³˜a: gGaN(0001)/…ŠE–Ê‚Ì\‘¢‚Ö‚Ì•\–Ê‘Ñ“d‚̉e‹¿ (Effect of surface charging on the structure of GaN(0001)/water interface)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 19p-F102-6, p. 100000001-332, ‘ˆî“c‘åŠw, 2018”N3ŒŽ19“ú (2018).
  29. ¡ŠÖ—T‹M, ²“¡³Š°, “¡ˆäŽŽi, ™ŽR³˜a, ’†–ì‹`º: gŒõ—U‹NOCP–@‚É‚æ‚锼“±‘ÌE“d‰ð‰tŠE–ʃoƒ“ƒhƒAƒ‰ƒCƒƒ“ƒg‚̉ðÍ (Analysis of semiconductor/electrolyte interface by photo-induced open-circuit-potential method)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 19p-F102-7, p. 100000001-333, ‘ˆî“c‘åŠw, 2018”N3ŒŽ19“ú (2018).
  30. —Lˆä’m—Ç, ’†Œ´‘ñ–ç, o‰Y“Žq, •S£Œ’, ™ŽR³˜a, ’†–ì‹`º, ‘šŠ_K_: gSiŠî”ÂãGaN‘w‚̉ž—͂ɑ΂·‚éAlN’†ŠÔ‘w‚̬’·‰·“xˆË‘¶« (Dependence of stress of GaN layer on Si substrates on growth temperature of AlN interlayer)h, ‘æ65‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ïu‰‰—\eW, 20p-P6-13, p. 13-312, ‘ˆî“c‘åŠw, 2018”N3ŒŽ20“ú (2018).
  31. ‘åìK—S, ›À‹M”Ž, ¬—Ñ—³”n, Ží‘º‘ñ•v, ’†–ì‹`º: g•Î”gˆË‘¶ˆÊ‘ŠƒVƒtƒ^‚ð‘}“ü‚µ‚½InGaAsP/InPƒn[ƒtƒŠƒbƒW“±”g˜HŒ^•Î”g•ÏŠ·Ší‚Ì컌뷑ϫ‚ÉŠÖ‚·‚錟“¢ (Fabrication tolerance of InGaAsP/InP half ridge polarization converters with polarization-dependent phase shifters)h, “dŽqî•ñ’ÊMŠw‰ï‘‡‘å‰ï(“Œ‹ž“d‹@‘åŠw), ƒGƒŒƒNƒgƒƒjƒNƒXu‰‰˜_•¶W1, C-3-30, p. 148, 2018”N3ŒŽ23“ú (2018).

‚»‚Ì‘¼/ Others (2017.4.1-2018.3.31)

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  2. ”ö‰YŒ›Ž¡˜Y, 쌴“c—m, ’†–ì‹`º, ŽÄ“c’¼, ^“‡–L, ‹ß“¡‚Žu: g(À’k‰ï) APEX ‚»‚̶‚¢—§‚¿‚ÆŒ»ó, «—ˆh, ‰ž—p•¨—, vol. 86, no. 8, pp. 688-694, 2017”N8ŒŽ1“ú (2017).
  3. g’†–ì‹`º: gæ’[Œ¤30”N, ÝE30”N, •½¬30”Nh, æ’[Œ¤ƒjƒ…[ƒX, vol. 3, no. 100, p. 12, 2017”N9ŒŽ22“ú (2017).
  4. ŠÛŽR—TW, ’†‘º—º—T, ’†–ì‹`º, “¡ˆäŽŽi, ™ŽR³˜a: gGaN/AlN/GaNƒtƒHƒgƒJƒ\[ƒh‚É‘ÍÏ‚µ‚½”’‹à•G”}‚ÌŒõ“d‹C‰»Šw“Á«‚Ö‚ÌŒø‰Êh, ‰ž—p•¨—Šw‰ïŒ‹»HŠw•ª‰È‰ï ‘æ6‰ñŒ‹»HŠw–¢—ˆm Œ¤‹†ƒ|ƒXƒ^[”­•\‰ï, “Œ‹ž‘åŠw, 2017”N11ŒŽ2“ú (2017).
  5. ¡ŠÖ—T‹M, ²“¡³Š°, “n•ÓŒ’‘¾˜Y, “¡ˆäŽŽi, ™ŽR³˜a, ’†–ì‹`º: gŒõ“d‹C‰»Šw”½‰ž‚Ì—‰ð‚ÉŒü‚¯‚½n-GaNƒGƒsƒ^ƒLƒVƒƒƒ‹Œ‹»‚Ì•]‰¿h, ‰ž—p•¨—Šw‰ïŒ‹»HŠw•ª‰È‰ï ‘æ6‰ñŒ‹»HŠw–¢—ˆm Œ¤‹†ƒ|ƒXƒ^[”­•\‰ï, “Œ‹ž‘åŠw, 2017”N11ŒŽ2“ú (2017).