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Œ¤‹†˜_•¶/Journal Papers

  1. Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: gUltrathin body InGaAs-on-insulator metal?oxide?semiconductor field-effect transistors with InP passivation layers on Si substrates fabricated by direct wafer bondingh, Applied Physics Express vol. 4, no. 5, pp. 054202-1-3, April 14 (2011).
  2. Momoko Deura, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama : gHigh-temperature annealing effect of Si in group-V ambient prior to heteroepitaxy of InAs in metal-organic vapor phase epitaxyh, Japanese Journal of Applied Physics, vol. 50, no. 4, pp. 04DH07-1-5, April (2011).
  3. Tatsuki Fujiwara, Yoshiaki Nakano, and Masakazu Sugiyama : gContinuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor-phase-diffusion-based selective-area pyramidal growthh, Physica Status Solidi A, vol. 208, no. 5, pp. 1203-1205, May (2011).
  4. Takuo Tanemura, Krishna C. Balram, Dany-Sebastien Ly-Gagnon, Pierre Wahl, Justin S. White, Mark L. Brongersma, and David A. B. Miller, gMultiple-wavelength focusing of surface plasmons with a nonperiodic nanoslit coupler,h Nano Lett., vol. 11, no.7, pp 2693-2698, May (2011).
  5. Ling-Han Li, Akio Higo, Masakazu Sugiyama, and Yoshiaki Nakano: gMonolithically integrated low-loss three-dimensional spot-size converter and silicon photonic waveguides constructed by nanotuned Bosch process and oxidationh, Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 10, no. 2, pp. 023002-1-7, April-June (2011).
  6. Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim, Noriyuki Taoka, Yuji Urabe, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: gSub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layersh, IEEE Electron Device Letters, vol. 32, no. 9, pp. 1218-1220, September (2011).
  7. Hassanet Sodabanlu, Jung-Seung Yang, Takuo Tanemura, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano: gIntersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxyh, Applied Physics Letters, vol. 99. no. 15, pp. 151102-1-3, October 10 (2011).
  8. Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gEffect of GaAs step layer on InGaAs/GaAsP quantum well solar cellsh, Applied Physics Express, vol. 4, no. 12, pp. 122301-1-3, November 22 (2011).
  9. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gStrain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvatureh, Journal of Applied Physics, vol. 110, no. 11, pp. 113501-1-5, December 1 (2011).
  10. Katsushi Fujii, Shinichiro Nakamura, Satoshi Yokojima, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, and Yoshiaki Nakano: gPhotoelectrochemical properties of In(x)Ga(1-x)N/GaN multiquantum well structures in depletion layersh, Journal of Physical Chemistry C, vol. 115, pp. 25165-25169, December 22 (2011).
  11. Yu Wen, Yunpeng Wang, and Yoshiaki Nakano : gSuppressed indium diffusion and enhanced absorption in InGaAs/GaAsP stepped quantum well solar cellh, Applied Physics Letters, vol. 100, no. 5, pp. 053902-1-3, January 30 (2012).
  12. Sooheuk Che, Masaru Zaitsu, Akio Higo, and Yoshiaki Nakano: gDesign and simulation of InP 1xN planar optical switch based on beam deflectionh, IEICE Transactions on Electronics, vol. E95-C, no. 2, pp. 213-217, February (2012).
  13. Masaru Zaitsu, Akio Higo, Takuo Tanemura, and Yoshiaki Nakano: gAll-optical flip-flop based on coupled-mode DBR laser diode for optically clocked operationh, IEICE Transactions on Electronics, vol. E95-C, vol. 2, pp. 218-223, February (2012).

‘Û‰ï‹c˜_•¶/ International Conferences

  1. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gIn-situ measurement and simulation of wafer curvature of InGaAs/GaAsP strain-compensated multiple quantum wellsh, Conference Proceedings, 38th International Symposium on Compound Semiconductors (ISCS 2011), P1.10, Berlin, Germany, May 23 (2011).
  2. Yuki Ikku, Masafumi Yokoyama, Ryo Iida, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: gALD Al2O3 activated direct wafer bonding for III-V CMOS photonics platformh, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Mo-2.2.2, pp. 220-223, Berlin, Germany, May 23 (2011).
  3. Ling-Han LI, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano: gElectrical pumping Febry-Pe?rot lasing of III-V layers on highly doped silicon micro rib by plasma assisted direct bondingh, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Mo-2.2.5, pp. 232-235, Berlin, Germany, May 23 (2011).
  4. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gStructural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer's curvature measurement and ex-situ X-ray diffractionh, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), P07, pp. 87-90, Berlin, Germany, May 24 (2011).
  5. Yunpeng Wang, Yu Wen, Masakazu Sugiyama, and Yoshiaki Nakano: gAnalysis of in situ surface reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell propertiesh, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Th-9.1.4, pp. 464-467, Berlin, Germany, May 26 (2011).
  6. Yu Wen, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: gEvidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performanceh, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Th-9.1.5, pp. 468-470, Berlin, Germany, May 26 (2011).
  7. Linghan Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano : gSilicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bondingh, 16th International Solid-State Sensors, Actuators and Microsystems Conference (Transducers), W3P.133, pp. 2502-2505, Beijing, China, June 5 (2011).
  8. Taelim Lee, Akio Higo, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi: gTransmissive color shift through layered sub-wavelength gratings based on plasmon enhanced couplingh, 16th International Solid-State Sensors, Actuators and Microsystems Conference (Transducers), T3P.136, pp. 1542-1545, Beijing, China, June 5 (2011).
  9. Masafumi Yokoyama, Sang-Hyeon Kim, Rui Zhang, Noriyuki Taoka, Yuji Urabe, Tatsuro Maeda, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: gCMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bondingh, Symposium on VLSI Technology (VLSIT 2011), 4A-3, pp. 60-61, Honolulu, Hawaii, June 14 (2011).
  10. Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano : gEnhanced carrier escape in MSQW solar cell and its impact on photovoltaic performanceh, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 928, Seattle, Washington, June 19 (2011).
  11. Kentaroh Watanabe, Yasushi Hamamoto, Akio Higo, Masakazu Sugiyama, and Yoshiaki Nakano: gFabrication of graded refractive index 3-dimensional anti-reflection structure using self-assembled SiO2 nano particlesh, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), G40, 168, Seattle, Washington, June 19 (2011).
  12. Hiromasa Fujii, Yunpeng Wang, Yoshiaki Nakano, and Masakazu Sugiyama: gEffects of quantum wells position and background doping on the performance of multiple quantum well solar cellsh, Conference Record, the 37th IEEE Photovoltaic Specialists Conference(PVSC 37), A16, 737, Seattle, Washington, June 19 (2011).
  13. Masakazu Sugiyama, Yunpeng Wang, Kentaroh Watanabe, Takayuki Morioka, Yoshitaka Okada, and Yoshiaki Nakano: gPhotocurrent generation by two-step photon absorption with quantum-well superlattice cellh, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 931, Seattle, Washington, June 19 (2011).
  14. Louise C Hirst, Markus F Fuhrer, Arthur LeBris, Jean-Francois Guillemoles, Murad J Y Tayebjee, Raphael G C R Clady, Timothy W Schmidt, Yunpeng Wang, Masakazu Sugiyama, and Nicholas J Ekins-Daukes: gHot carrier dynamics in InGaAs/GaAsP quantum well solar cellsh, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 927, Seattle, Washington, June 19 (2011).
  15. Yunpeng Wang, Yu Wen, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gA superlattice solar cell with enhanced short circuit current and minimized drop in open circuit voltageh, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), C9, 758, Seattle, Washington, June 19 (2011).
  16. Masaru Zaitsu, Akio Higo, Takuo Tanemura, and Yoshiaki Nakano: gOptically clocked flip-flop operation based on coupled DBR laser diodeh, 16th Opto-Electronics and Communications Conference (OECC 2011), 6D4_2, pp. 291-292, Kaohsiung, Taiwan, July 6 (2011).
  17. Masakazu Sugiyama, Yunpeng Wang, Hassanet Sodabanlu, Shaojun Ma, Hiromasa Fujii, Kentaroh Watanabe, and Yoshiaki Nakano: gOptical in situ monitoring of strain evolution and relaxation in lattice-mismatched InGaAs/GaAsP multiple quantum wells by MOVPEh, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy, Monterey, California, July 31 (2011).
  18. Shaojun Ma, Yunpeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gEffect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWsh, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy, Monterey, California, July 31 (2011).
  19. Yunpeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gManagement of highly-strained hetero-interfaces in InGaAs/GaAsP strain-balanced superlattice for photovoltaic applicationh, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy, Monterey, California, July 31 (2011).
  20. Akio Higo, Taelim Lee, Satoshi Maruyama, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi: gTransmission color control by stacked wire-grid polarizers with in-plane rotationh, International Conference on Optical MEMS and Nanophotonics (OMN 2011), PO25-20007499, pp. 209-210, Istanbul, Turkey, August 8 (2011).
  21. Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi : gUltralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junctionh, 8th IEEE International Conference on Group IV Photonics (GFP), WB5, pp. 36-38, London, UK, September 14 (2011).
  22. Taketo Aihara, Yosuke Nakano, Atsuhiko Fukuyama, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano, and Tetsuo Ikari : gNon-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum wells for solar cell applicationh, Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM 2011), L-1-2, Nagoya, Japan, September 28 (2011).
  23. Soohyeck Choi, Masaru Zaitsu, Akio Higo, Takuo Tanemura, and Yoshiaki Nakano: gNumerical demonstration of InP 1xN planar optical switch based on beam deflectionh, Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM 2011), P-7-18, Nagoya, Japan, September 29 (2011).
  24. ShaoJun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gGas sequence effect on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWsh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2D-4P-10, Fukuoka, Japan, November 28 (2011).
  25. Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gEffects of increasing well number on carrier transport in Eg = 1.2eV InGaAs / GaAsP multiple quantum well solar cellsh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2B-4O-06, Fukuoka, Japan, November 28 (2011).
  26. Hiromasa Fujii, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: gA large number stack of Eg=1.2eV InGaAs / GaAsP multiple quantum wells with graded buffer layers for enhanced infrared responseh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2D-4P-13, Fukuoka, Japan, November 28 (2011).
  27. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama and Yoshiaki Nakano: gEffects of background Zn doping on the performance of MOVPE-grown InGaAs / GaAsP multiple quantum wells solar cellsh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-05, Fukuoka, Japan, November 28 (2011).
  28. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gImpact of strain accumulation on InGaAs / GaAsP multiple quantum wells solar cells: direct correlation between in situ strain measurement and cell performancesh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-06, Fukuoka, Japan, November 28 (2011).
  29. Yunpeng Wang, Kentaroh Watanabe,Hiromasa Fujii, Shaojun Ma, Masakazu Sugiyama, and Yoshiaki Nakano: gCarrier transport through super-lattice region in a multiple quantum well solar cellh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-07, Fukuoka, Japan, November 28 (2011).
  30. Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gDeep multiple stepped quantum well (MSQW) solar cellh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-09, Fukuoka, Japan, November 28 (2011).
  31. Kentaroh Watanabe, Yugo Yamada, Minato Senou, Masakazu Sugiyama, and Yoshiaki Nakano: gFabrication of monolithic integrated series-connected GaAs PV cells for concentrator applicationh, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-21, Fukuoka, Japan, November 28 (2011).
  32. Masafumi Yokoyama, Rena Suzuki1 , Noriyuki Taoka, Wipakorn Jevasuwan2 , Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiai Nakano, Mitsuru Takenaka, and Shinichi Takagi: gSurface cleaning effect on III-V oxide for InGaAs(100), (111)A, and (111)B surfaces and their Al2O3 MOS interfaces by using (NH4)2S solutionh, 42nd IEEE Semiconductor Interface Specialist Conference (SISC 2011), P.22, pp. 1-2, Arlington, Virginia, December 1 (2011).
  33. Masakazu Sugiyama, Yunpeng Wang, Yu Wen, Kentaroh Watanabe, and Yoshiaki Nakano: gExploring the potential of quantum wells for efficiency enhancement in photovoltaic cellsh, Abstract, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices (Part of SPIE Photonics West OPTO 2012), Paper 8267-11, San Francisco, CA, USA, January 23 (2012).
  34. Louise C. Hirst, Markus Furher, Daniel J. Farrell, Arthur Le Bris, Jean-Franc?ois Guillemoles, Murad J. Y. Tayebjee, Raphael Clady, Timothy W. Schmidt, Masakazu Sugiyama, Yunpeng Wang, and Nicholas J. Ekins- Daukes: gInGaAs/GaAsP quantum wells for hot carrier solar cellsh, Abstract, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices (Part of SPIE Photonics West OPTO 2012), Paper 8267-31, San Francisco, CA, USA, January 23 (2012).
  35. Myung-Joon Kwack, Tomofumi Oyama, Yasuaki Hashizume, Shinji Mino, Masaru Zaitsu, Takuo Tanemura, and Yoshiaki Nakano : gIntegrated optical buffer using InP 1x8 switch and silica-based delay line circuith, Technical Digest CD, Conference on Optical Fiber Communication (OFC/NFOEC2011), OTh4D, 2, pp. 1-3, Los Angeles, CA, March 8 (2012).
  36. Masanori Kubota, Yoshio Mita, Takeshi Momose, Aiko Kondo, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama: gA 50 nm-wide 5ƒÊm-deep copper vertical gap formation method by a gap-narrowing post-process with supercritical fluid deposition for Pirani gauge operating over atmospheric pressureh, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), pp. 204-207, Paris, France, January 29 (2012).

‘àE‰ðà˜_•¶/ Review Papers

  1. Yoshiaki Nakano: gPrinciple and frontier of epitaxial compound semiconductor photovoltaic cells toward efficiencies more than 50%h, Proceedings of the 5th Forum on Nano and Giga Challenges in Electronics, Photonics, and Renewable Energy (NGC 2011), p. 139, Moscow, Russia, September 12-16 (2011).
  2. Yoshiaki Nakano: gUltra-high efficiency photovoltaic cells for large scale solar power generationh, AMBIO: A Journal of the Human Environment, vol. 41, Supplement 2, pp. 125-131 (2012).
  3. Yoshiaki Nakano: gMonolithically integrated phased-array switchh, Asia Communications and Photonics Conference and Exhibition (ACP 2011), 8308-1, Shanghai, China, November 14 (2011).
  4. ‰¡ŽR³Žj, ‹à‘ŠŒ«, ’£áÍ, “c‰ª‹I”V, –m•”—F“ñ, ‘O“c’C˜Y, ‚–؏GŽ÷, ˆÀ“c“N“ñ, ŽR“c‰i, Žsì–, •ŸŒ´¸, `‰ë•F, ™ŽR³˜a, ’†–ì‹`º, ’|’†[, ‚–ؐMˆê: gŽŸ¢‘㍂«”\CMOSŽÀŒ»‚ÉŒü‚¯‚½‚ˆÚ“®“xIII-V/Geƒ`ƒƒƒlƒ‹MOSFET‚̏WÏ‰» (Integration of high-mobility III-V/Ge channel MOSFETs for high-performance CMOS)h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 16a-A1-1, ‘ˆî“c‘åŠw, 3ŒŽ16“ú (2012).

ƒVƒ“ƒ|ƒWƒEƒ€EŒ¤‹†‰ïE‘å‰ï“™”­•\/ Symposium,etc...

  1. ’†–ì‹`º: g‘å‹K–Í‘¾—zŒõ”­“d‚ÉŒü‚¯‚½’´‚Œø—¦‘¾—z“d’r‚ÌŒ¤‹†ŠJ”­h, JIEPÅæ’[ŽÀ‘•‹ZpƒVƒ“ƒ|ƒWƒEƒ€, 6ŒŽ2“ú (2011).
  2. Katsushi Fujii, Takashi Kato, Keiichi Sato, Tsutomu Minegishi, Takahiro Yamada, Hisanori Yamane, Takafumi Yao, Masakazu Sugiyama, and Yoshiaki Nakano: gDifference of GaN photoelectrochemical properties in growth methodh, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), We1-19, Biwako, Shiga, June 29 (2011).
  3. Masakazu Sugiyama, Yunpeng Wang, Kentaroh Watanabe, and Yoshiaki Nakano: gA superlattice solar cell as a middle cell of 3-junction solar cells for improved current matching and higher efficiencyh, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-2, Biwako, Shiga, June30 (2011).
  4. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: gGrowth optimization of InGaAs/GaAsP strain-compensated multiple quantum wells using in-situ curvature measurement and simulationh, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-3, Biwako, Shiga, June 30 (2011).
  5. Yu Wen, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: gEnhanced-depletion-width MSQW solar cell by metal-organic vapor-phase epitaxyh, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-4, Biwako, Shiga, June30 (2011).
  6. Hiromasa Fujii, Yunpeng Wang, Yoshiaki Nakano, and Masakazu Sugiyama: gEffects of quantum wells position on carrier transport in multiple quantum well solar cells with p-type background dopingh, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-5, Biwako, Shiga, June 30 (2011).
  7. Taketo Aihara, Atsuhiko Fukuyama, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano, and Tetsuo Ikari: gNon-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum wells for solar cell application by using a piezoelectric photothermal method InGaAs/GaAsPh, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-6, Biwako, Shiga, June 30 (2011).
  8. —›—½àj, ‘½Šìì—Ç, ”ìŒãº’j, “ú•é‰hŽ¡, ™ŽR³˜a, ’†–ì‹`º: g’¼ÚÚ‡–@‚É‚æ‚éŒõ”­U‚ÆŒõŽqƒZƒ“ƒVƒ“ƒO‚½‚ß‚ÌSilicon/InGaAsPƒwƒeƒ\‘¢ (Silicon/InGaAsP heterostructure for Fabry-Perot lasing and photon sensing by plasma assisted direct bonding)h, ‘æ36‰ñ“ú–{ŒõŠw‰ïŒõŠwƒVƒ“ƒ|ƒWƒEƒ€, u‰‰”ԍ†2, pp. 5-6, “Œ‹ž‘åŠw, 7ŒŽ7“ú (2011).
  9. ‰¡ŽR³Žj, ‹à‘ŠŒ«, ’£áÍ, “c‰ª‹I”V, –m•”—F“ñ, ‘O“c’C˜Y, ‚–؏GŽ÷, ˆÀ“c“N“ñ, ŽR“c‰i, Žsì–, •ŸŒ´¸, `‰ë•F, ™ŽR³˜a, ’†–ì‹`º, ’|’†[, ‚–ؐMˆê: gŠî”“\‚荇‚킹–@‚É‚æ‚鎩ŒÈ®‡Œ^InGaAs nMOSFET/Ge pMOSFETWÏ‰»CMOS‚ÌŽÀŒ» (CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding)h, ‰ž—p•¨—Šw‰ïƒVƒŠƒRƒ“ƒeƒNƒmƒƒW[•ª‰È‰ï‘æ139‰ñŒ¤‹†W‰ï, 1, ŽY‘Œ¤—ÕŠC•›“sSƒZƒ“ƒ^[, 7ŒŽ21“ú (2011).
  10. à’×D, ”ìŒãº’j, Ží‘º‘ñ•v, ’†–ì‹`º: gŒ‹‡ƒ‚[ƒg? DBRƒŒ[ƒT?‚ð—p‚¢‚½ŠÉ˜aU“®’ጸ‘SŒõƒtƒŠƒbƒt?Eƒtƒƒbƒt?“®ìh, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 31a-ZN-8, ŽRŒ`‘åŠw, 8ŒŽ31“ú (2011).
  11. “¡ˆäG¹, ‰¤‰]–Q, ™ŽR³˜a, ’†–ì‹`º: gGaAs/InGaAsŠÉÕ‘w‚ð—p‚¢‚½InGaAs/GaAsP‘½d—ÊŽqˆäŒË‚̐¬’·h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 31a-ZA-14, ŽRŒ`‘åŠw, 8ŒŽ31“ú (2011).
  12. ”n­x, ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹ “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: gInGaAs/GaAsP˜c‚ݕ⏞—ÊŽqˆäŒË‚ÌMOVPE‚É‚¨‚¯‚éƒwƒeƒŠE–ʂ̉e‹¿‚Ìin situƒEƒGƒn[‹È—¦‚É‚æ‚郂ƒjƒ^ƒŠƒ“ƒOh, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 31a-ZA-15, ŽRŒ`‘åŠw, 8ŒŽ31“ú (2011).
  13. ŒŠàV•—•F, ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, “¡ˆäŽŽi, ’†–ì‹`º, ™ŽR³˜a: gMOVPE–@‚É‚æ‚éInGaN/AlN‘½d—ÊŽqˆäŒË‚ÌŒ‹»¬’·‚¨‚æ‚Ð?•]‰¿h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 31a-ZE-8, ŽRŒ`‘åŠw, 8ŒŽ31“ú (2011).
  14. ‰¡ŽR³Žj, ‹à‘ŠŒ«, ’£áÍ, “c‰ª‹I”V, –m•”—F“ñ, ‘O“c’C˜Y, ‚–؏GŽ÷, ˆÀ“c“N“ñ, ŽR“c‰i, Žsì–, •ŸŒ´¸, `‰ë•F, ™ŽR³˜a, ’†–ì‹`º, ’|’†[, ‚–ؐMˆê: gŠî”“\‚荇‚킹–@‚ð—p‚¢‚½III-V/Ge CMOSƒgƒ‰ƒ“ƒWƒXƒ^WÏ‰»h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 1a-P7-7, ŽRŒ`‘åŠw, 9ŒŽ1“ú (2011).
  15. “n•ÓŒ’‘¾˜Y, “n粗ǗS, ™ŽR³˜a, ‹{–쌒ŽŸ˜Y, ’†–ì‹`º: gWŒõ‚ÆŒõƒLƒƒƒsƒeƒB‚É‚æ‚éWŒõŒ^‘¾—z“d’r—p2ŽŸŒõŠw‘fŽq‚ÌŒŸ“¢h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 1a-H-3, ŽRŒ`‘åŠw, 9ŒŽ1“ú (2011).
  16. ‰¤‰]–Q, •¶àï, ‘ŠŒ´Œ’l, •ŸŽR“Ö•F, ’ô“N—Y, ™ŽR³˜a, ’†–ì‹`º: gInGaAs/GaAsP˜c‚ݕ⏞’´ŠiŽqƒZƒ‹‚É‚æ‚éƒLƒƒƒŠƒA—A‘—‚ÌŒø—¦‰»h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 1a-H-6, ŽRŒ`‘åŠw, 9ŒŽ1“ú (2011).
  17. •¶àï, ‰¤‰]–Q, ™ŽR³˜a, ’†–ì‹`º: gŠK’iƒ|ƒeƒ“ƒVƒƒƒ‹—ÊŽqˆäŒËƒZƒ‹‚Ì‹ó–R‘wŠg’£‚É‚æ‚鐫”\Œüãh, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 1a-H-7, ŽRŒ`‘åŠw, 9ŒŽ1“ú (2011).
  18. ‘ŠŒ´Œ’l, •ŸŽR“Ö•F, ‰¤‰]–Q, ™ŽR³˜a, ’†–ì‹`º, ’ô“N—Y: gInGaAs/GaAsP˜c•âž—ÊŽqˆäŒË‘¾—z“d’r‹zŽû‘w‚ł̃LƒƒƒŠƒAÄŒ‹‡‘¹Ž¸•]‰¿h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 1a-H-8, ŽRŒ`‘åŠw, 9ŒŽ1“ú (2011).
  19. ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, ”n­x, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: gMOVPE¬’·InGaAs/GaAsP‘½d—ÊŽqˆäŒË‚É‚¨‚¯‚éZnƒRƒ“ƒ^ƒ~‚̉e ‹¿h, ‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ïu‰‰—\eW, 1a-H-9, ŽRŒ`‘åŠw, 9ŒŽ1“ú(2011).
  20. ‘å˜a•¶•F, à’×D, ”ìŒãº’j, Ží‘º‘ñ•v, ’†–ì‹`º: gŒõWÏ‰ñ˜H‚É‚¨‚¯‚é InGaAsP/InP •Î”gƒRƒ“ƒo[ƒ^‚̍쐻 (Fablication of InGaAsP/InP polarization converter for photonic integrated circuits)h, “dŽqî•ñ’ʐMŠw‰ïƒGƒŒƒNƒgƒƒjƒNƒXƒ\ƒTƒCƒGƒeƒB‘å‰ï(–kŠC“¹‘åŠw)u‰‰˜_•¶W1, C-3-14, p. 136, 9ŒŽ13“ú (2011).
  21. ›ÁŸªŠq, à’×D, ”ìŒãº’j, Ží‘º‘ñ•v, ’†–ì‹`º: gƒr[ƒ€‹ÈÜŒ^ 1xN ŒõƒXƒCƒbƒ`‚Ì•”•ªƒGƒbƒ`ƒ“ƒO‚É‚æ‚éƒNƒƒXƒg[ƒN’ጸ (Reducing crosstalk by partially etched InP 1xN planar optical switch based on beam deflection)h, “dŽqî•ñ’ʐMŠw‰ïƒGƒŒƒNƒgƒƒjƒNƒXƒ\ƒTƒCƒGƒeƒB‘å‰ï(–kŠC“¹‘åŠw)u‰‰˜_•¶W1, C-3-42, p. 164, 9ŒŽ13“ú (2011).
  22. Šs–½r, ‹´‹l‘׏², ”ü–ì^Ži, à’×D, Ží‘º‘ñ•v, ’†–ì‹`º: gƒtƒF[ƒYƒAƒŒƒC 1~8 WÏŒõƒXƒCƒbƒ`‚ƐΉpŒn PLC ’x‰„‰ñ˜H‚ð—p‚¢‚½¬Œ^Œõƒoƒbƒtƒ@ (Compact optical buffer using integrated phased-array 1~8 switch and silica-based PLC delay line)h, “dŽqî•ñ’ʐMŠw‰ïƒGƒŒƒNƒgƒƒjƒNƒXƒ\ƒTƒCƒGƒeƒB‘å‰ï(–kŠC“¹‘åŠw)u‰‰˜_•¶W1, C-3-73, p. 195, 9ŒŽ13“ú (2011).
  23. ™ŽR³˜a, ‰¤‰]–Q, “n•ÓŒ’‘¾˜Y, ’†–ì‹`º: g‚Œø—¦‘¾—z“d’r—pInGaAs/GaAsP’´ŠiŽq‚ÌMOVPE‚É‚¨‚¯‚éƒwƒeƒŠE–ʐ§Œäh, ‰»ŠwHŠw‰ï‘æ43‰ñH‹G‘å‰ïŒ¤‹†”­•\u‰‰—vŽ|W(–¼ŒÃ‰®H‹Æ‘åŠw), U215, 9ŒŽ14“ú (2011).
  24. ”n­x, Hassanet Sodabanlu, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: gUsing in-situ curvature measurement and simulation to optimize growth of InGaAs/GaAsP strain-compensated multiple quantum wellsh, ‰»ŠwHŠw‰ï‘æ43‰ñH‹G‘å‰ïŒ¤‹†”­•\u‰‰—vŽ|W(–¼ŒÃ‰®H‹Æ‘åŠw), U216, 9ŒŽ14“ú (2011).
  25. “n•ÓŒ’‘¾˜Y, ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, ”n­x, ™ŽR³˜a, ’†–ì‹`º: gInxGa(1?x)P‚ÌMOVPE‚É‚¨‚¯‚é‚»‚̏ê‹È—¦ŠÏŽ@‚É‚æ‚é‘g¬Œˆ’è‚ÌŽè–@h, ‰»ŠwHŠw‰ï‘æ43‰ñH‹G‘å‰ïŒ¤‹†”­•\u‰‰—vŽ|W(–¼ŒÃ‰®H‹Æ‘åŠw), U217, 9ŒŽ14“ú (2011).
  26. Akio Higo, Taelim Lee, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi : gA color-changing pixel by wavelength dependent nanowire grid polarizerfsh, Book of Abstracts, The 28th Sensor Symposium on Sensors, Micromachines, and Applied Systems/the 3rd Integrated MEMS Symposium, D1-3, p. 40, Tokyo, Japan, September 26 (2011).
  27. “n•ÓŒ’‘¾˜Y, ‰¤‰]–Q, Hassanet Sodabanlu, •¶šg, ”n­x, —«Ë, “¡ˆäG¹, Kim Boram, £”\–¢“Þ“s, ™ŽR³˜a, ’†–ì‹`º: gƒ^ƒ“ƒe?ƒ€Œ^‘¾—z“d’r‚̍‚Œø—¦‰»‚ÖŒü‚¯‚½—ÊŽqˆäŒË\‘¢‚ÌŠJ”­h, ‘æ3‰ñ”––Œ‘¾—z“d’rƒZƒ~ƒi[, PP-30, p. 1, ƒ‰ƒtƒŒ‚³‚¢‚½‚Ü, é‹Ê, 10ŒŽ24“ú (2011).
  28. à’×D, ”ìŒãº’j, Ží‘º‘ñ•v, ’†–ì‹`º: gŒ‹‡ƒ‚[ƒhDBRƒŒ[ƒU‚ð—p‚¢‚½ŒõƒNƒƒbƒN“¯Šú‘SŒõƒtƒŠƒbƒvEƒtƒƒbƒv‚̐”’l‰ðÍ (Numerical analyses of optically-clocked all-optical flip-flop using a coupled-mode DBR laser diode)h, “dŽqî•ñ’ʐMŠw‰ï‹ZpŒ¤‹†•ñ(ƒŒ[ƒUE—ÊŽqƒGƒŒƒNƒgƒƒjƒNƒXŒ¤‹†‰ï, OCS, OPE‹¤Ã), vol. 111, no. 267, LQE2011-71, pp. 87-92, 10ŒŽ27“ú (2011).
  29. Yoshiaki Nakano: gPost-silicon solar cells for ultra-high efficiencyh, Abstracts, 4th International Symposium on Innovative Solar Cells, pp. 1-25, Tokyo, Japan, March 5 (2012).
  30. ‰¡ŽR³Žj, —é–Ø—íØ, “c‰ª‹I”V, ƒEƒBƒpƒR[ƒ“@ƒWƒFƒpƒXƒƒ“, ‘O“c’C˜Y, ˆÀ“c“N“ñ, Žsì–, ŽR“c‰i, •ŸŒ´¸, `‰ë•F, ™ŽR³˜a, ’†–ì‹`º, ’|’† [, ‚–ؐMˆê: g—°‰»ƒAƒ“ƒ‚ƒjƒEƒ€—n‰t‚Ä?•\–ʏˆ—‚µ‚½InGaAs(100), (111)A, (111)B‚ÌMOSŠE–Ê“Á« (Surface cleaning effect for InGaAs (100), (111)A, and (111)B by an (NH4)2Sx solution and their MOS interface properties)h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 17p-A4-17, ‘ˆî“c‘åŠw, 3ŒŽ17“ú (2012).
  31. ’†–ì—z‰î, ‘ŠŒ´Œ’l, “¡ˆäG¹, •ŸŽR“Ö•F, ™ŽR³˜a, ’†–ì‹`º, ’ô“N—Y: gˆ³“d‘fŽqŒõ”M•ÏŠ·•ªŒõ–@‚É‚æ‚éInGaAs/GaAsP˜c•âž—ÊŽqˆäŒË‘¾—z“d’r‚̃LƒƒƒŠƒAÄŒ‹‡‘¹Ž¸‰ß’ö‚̐ϑw”ˆË‘¶«h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 17a-E1-3, ‘ˆî“c‘åŠw, 3ŒŽ17“ú (2012).
  32. “¡ˆäG¹, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: g•âžƒh[ƒsƒ“ƒO‚É‚æ‚éInGaAs/GaAsP—ÊŽqˆäŒË‘¾—z“d’r‚̃LƒƒƒŠƒA‰ñŽûŒø—¦Œüãh, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 18a-C1-5, ‘ˆî“c‘åŠw, 3ŒŽ18“ú (2012).
  33. £”\–¢“Þ“s, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: g‚WŒõ”­“d—pƒ}ƒCƒNƒWÏ’¼—ñÚ‘±GaAs‘¾—z“d’r‚ÌŽŽì (Fabrication of the monolithic iIntegrated micro series-connected GaAs solar cells for concentrator photovoltaics)h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 18a-C1-7, ‘ˆî“c‘åŠw, 3ŒŽ18“ú (2012).
  34. ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, ”n­x, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º:h InGaAs/GaAsP‘½d—ÊŽqˆäŒË‘¾—z“d’r‚É‚¨‚¯‚é˜c‚Ý’~Ï—ʂƃZƒ‹“Á«‚Ì‘ŠŠÖ (Correlation between performance of InGaAs/GaAsP multiple quantum wells solar cell and accumulating stain inside the structure)h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 18p-C1-4, ‘ˆî“c‘åŠw, 3ŒŽ18“ú (2012).
  35. “n•ÓŒ’‘¾˜Y, ‰¤‰]–Q, ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, ”n­x, ™ŽR³˜a, ’†–ì‹`º: gInGaAs/GaAsP˜c‚ݕ⏞’´ŠiŽq‘¾—z“d’r‚É‚¨‚¯‚éŠJ•ú“dˆ³‚̏WŒõˆË‘¶« (Effect of concentration ratio on the open-circuit voltage of InGaAs/GaAsP strain-balanced super-lattice solar cells)h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 18p-C1-6, ‘ˆî“c‘åŠw, 3ŒŽ18“ú (2012).
  36. “nç³ãđå, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: gSi(111)ãInAs‚Ì‘I‘ðƒwƒeƒƒGƒq?ƒ^ƒLƒVƒƒƒ‹¬’·‚É‚¨‚¯‚éŠE–Ê“d‹C“`“±“Á«h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 16a-A8-2, ‘ˆî“c‘åŠw, 3ŒŽ16“ú (2012).
  37. ”n­x, ƒnƒbƒTƒlƒbƒg ƒ\ƒ_[ƒoƒ“ƒ‹, “n•ÓŒ’‘¾˜Y, ™ŽR³˜a, ’†–ì‹`º: gInGaAs/GaAsP˜c‚ݕ⏞—ÊŽqˆäŒË‚É‚¨‚¯‚éŠE–ÊIn•ÎÍ‚̃EƒGƒn‹È—¦ŠÏŽ@‚É‚æ‚é’è—Ê (Investigation of indium segregation effect via wafer curvature monitoring in InGaAs/GaAsP strain-compensated MQWs)h, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 16a-A8-12, ‘ˆî“c‘åŠw, 3ŒŽ16“ú (2012).
  38. ‹v•Û“c‰ë‘¥, ŽO“c‹g˜Y, •S£Œ’, ‹ß“¡ˆ¤Žq, ‘šŠ_K_, ’†–ì‹`º, ™ŽR³˜a: g‚ƒAƒXƒyƒNƒg”䐂’¼ƒiƒmƒMƒƒƒbƒv‚ð—p‚¢‚½‚ˆ³‘ΉžMEMSƒsƒ‰ƒj[ƒQ[ƒWh, ‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ïu‰‰—\eW, 16a-E3-9, ‘ˆî“c‘åŠw, 3ŒŽ16“ú (2012).
  39. ›Á¬Š¿, Šs–½r, à’×D, ›ÁŸªŠq, ”ìŒãº’j, Ží‘º‘ñ•v, ’†–ì‹`º: gƒtƒF[ƒYƒhƒAƒŒƒC‚ð—p‚¢‚½”¼“±‘ÌŒõ•ÎŒü‘fŽq‚̐݌vh, “dŽqî•ñ’ʐMŠw‰ï‘‡‘å‰ï(‰ªŽR‘åŠw)ƒGƒŒƒNƒgƒƒjƒNƒXu‰‰˜_•¶W1, C-3-80, 3ŒŽ23“ú (2012).
  40. ‹e“c˜aF, ”ìŒãº’j, ’†–ì‹`º: g‚’¼oŽËŒ^Œõ“±”g˜H‘fŽq‚Ì‚½‚ß‚Ì InP ŽÎ‚߃hƒ‰ƒCƒGƒbƒ`ƒ“ƒO‚ÌŠJ”­h, •½¬24”N“d‹CŠw‰ï‘S‘‘å‰ïu‰‰˜_•¶W, 3-135, L“‡H‹Æ‘åŠw, 3ŒŽ21“ú (2012).

‚»‚Ì‘¼/ Others

  1. ƒGƒl­ô”²–{Œ©’¼‚µ‚ðC“Œ‘åæ’[Œ¤‚ª“¢˜_‰ïC‹ZpŠJ”­‚Ì•K—v«‘i‚¦, “ú–{ŒoÏV•·(’©Š§), 5–Ê, 6ŒŽ16“ú (2011).
  2. ’†–ì‹`º, g–¢—ˆ‚ð–a‚¬o‚·uVƒGƒlƒ‹ƒM[v‚Ì‘I‘ð ?‘¾—zŒõ”­“dh, “Œ‹ž‘åŠwL•ñŽu’WÂv, vol. 25, p. 48, 10ŒŽ7“ú (2011).