東京大学工学系研究科電気系工学専攻　中野・種村研究室

論文リスト2011 （2011.4.1～2012.3.31)/H23

研究論文/Journal Papers

  1. Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “Ultrathin body InGaAs-on-insulator metal?oxide?semiconductor field-effect transistors with InP passivation layers on Si substrates fabricated by direct wafer bonding”, Applied Physics Express vol. 4, no. 5, pp. 054202-1-3, April 14 (2011).
  2. Momoko Deura, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama : “High-temperature annealing effect of Si in group-V ambient prior to heteroepitaxy of InAs in metal-organic vapor phase epitaxy”, Japanese Journal of Applied Physics, vol. 50, no. 4, pp. 04DH07-1-5, April (2011).
  3. Tatsuki Fujiwara, Yoshiaki Nakano, and Masakazu Sugiyama : “Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor-phase-diffusion-based selective-area pyramidal growth”, Physica Status Solidi A, vol. 208, no. 5, pp. 1203-1205, May (2011).
  4. Takuo Tanemura, Krishna C. Balram, Dany-Sebastien Ly-Gagnon, Pierre Wahl, Justin S. White, Mark L. Brongersma, and David A. B. Miller, “Multiple-wavelength focusing of surface plasmons with a nonperiodic nanoslit coupler,” Nano Lett., vol. 11, no.7, pp 2693-2698, May (2011).
  5. Ling-Han Li, Akio Higo, Masakazu Sugiyama, and Yoshiaki Nakano: “Monolithically integrated low-loss three-dimensional spot-size converter and silicon photonic waveguides constructed by nanotuned Bosch process and oxidation”, Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 10, no. 2, pp. 023002-1-7, April-June (2011).
  6. Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim, Noriyuki Taoka, Yuji Urabe, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers”, IEEE Electron Device Letters, vol. 32, no. 9, pp. 1218-1220, September (2011).
  7. Hassanet Sodabanlu, Jung-Seung Yang, Takuo Tanemura, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano: “Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy”, Applied Physics Letters, vol. 99. no. 15, pp. 151102-1-3, October 10 (2011).
  8. Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Effect of GaAs step layer on InGaAs/GaAsP quantum well solar cells”, Applied Physics Express, vol. 4, no. 12, pp. 122301-1-3, November 22 (2011).
  9. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature”, Journal of Applied Physics, vol. 110, no. 11, pp. 113501-1-5, December 1 (2011).
  10. Katsushi Fujii, Shinichiro Nakamura, Satoshi Yokojima, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, and Yoshiaki Nakano: “Photoelectrochemical properties of In(x)Ga(1-x)N/GaN multiquantum well structures in depletion layers”, Journal of Physical Chemistry C, vol. 115, pp. 25165-25169, December 22 (2011).
  11. Yu Wen, Yunpeng Wang, and Yoshiaki Nakano : “Suppressed indium diffusion and enhanced absorption in InGaAs/GaAsP stepped quantum well solar cell”, Applied Physics Letters, vol. 100, no. 5, pp. 053902-1-3, January 30 (2012).
  12. Sooheuk Che, Masaru Zaitsu, Akio Higo, and Yoshiaki Nakano: “Design and simulation of InP 1xN planar optical switch based on beam deflection”, IEICE Transactions on Electronics, vol. E95-C, no. 2, pp. 213-217, February (2012).
  13. Masaru Zaitsu, Akio Higo, Takuo Tanemura, and Yoshiaki Nakano: “All-optical flip-flop based on coupled-mode DBR laser diode for optically clocked operation”, IEICE Transactions on Electronics, vol. E95-C, vol. 2, pp. 218-223, February (2012).

国際会議論文/ International Conferences

  1. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “In-situ measurement and simulation of wafer curvature of InGaAs/GaAsP strain-compensated multiple quantum wells”, Conference Proceedings, 38th International Symposium on Compound Semiconductors (ISCS 2011), P1.10, Berlin, Germany, May 23 (2011).
  2. Yuki Ikku, Masafumi Yokoyama, Ryo Iida, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “ALD Al2O3 activated direct wafer bonding for III-V CMOS photonics platform”, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Mo-2.2.2, pp. 220-223, Berlin, Germany, May 23 (2011).
  3. Ling-Han LI, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano: “Electrical pumping Febry-Pe?rot lasing of III-V layers on highly doped silicon micro rib by plasma assisted direct bonding”, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Mo-2.2.5, pp. 232-235, Berlin, Germany, May 23 (2011).
  4. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer's curvature measurement and ex-situ X-ray diffraction”, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), P07, pp. 87-90, Berlin, Germany, May 24 (2011).
  5. Yunpeng Wang, Yu Wen, Masakazu Sugiyama, and Yoshiaki Nakano: “Analysis of in situ surface reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell properties”, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Th-9.1.4, pp. 464-467, Berlin, Germany, May 26 (2011).
  6. Yu Wen, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: “Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance”, Conference Proceedings, 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), Th-9.1.5, pp. 468-470, Berlin, Germany, May 26 (2011).
  7. Linghan Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano : “Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding”, 16th International Solid-State Sensors, Actuators and Microsystems Conference (Transducers), W3P.133, pp. 2502-2505, Beijing, China, June 5 (2011).
  8. Taelim Lee, Akio Higo, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi: “Transmissive color shift through layered sub-wavelength gratings based on plasmon enhanced coupling”, 16th International Solid-State Sensors, Actuators and Microsystems Conference (Transducers), T3P.136, pp. 1542-1545, Beijing, China, June 5 (2011).
  9. Masafumi Yokoyama, Sang-Hyeon Kim, Rui Zhang, Noriyuki Taoka, Yuji Urabe, Tatsuro Maeda, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding”, Symposium on VLSI Technology (VLSIT 2011), 4A-3, pp. 60-61, Honolulu, Hawaii, June 14 (2011).
  10. Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano : “Enhanced carrier escape in MSQW solar cell and its impact on photovoltaic performance”, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 928, Seattle, Washington, June 19 (2011).
  11. Kentaroh Watanabe, Yasushi Hamamoto, Akio Higo, Masakazu Sugiyama, and Yoshiaki Nakano: “Fabrication of graded refractive index 3-dimensional anti-reflection structure using self-assembled SiO2 nano particles”, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), G40, 168, Seattle, Washington, June 19 (2011).
  12. Hiromasa Fujii, Yunpeng Wang, Yoshiaki Nakano, and Masakazu Sugiyama: “Effects of quantum wells position and background doping on the performance of multiple quantum well solar cells”, Conference Record, the 37th IEEE Photovoltaic Specialists Conference(PVSC 37), A16, 737, Seattle, Washington, June 19 (2011).
  13. Masakazu Sugiyama, Yunpeng Wang, Kentaroh Watanabe, Takayuki Morioka, Yoshitaka Okada, and Yoshiaki Nakano: “Photocurrent generation by two-step photon absorption with quantum-well superlattice cell”, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 931, Seattle, Washington, June 19 (2011).
  14. Louise C Hirst, Markus F Fuhrer, Arthur LeBris, Jean-Francois Guillemoles, Murad J Y Tayebjee, Raphael G C R Clady, Timothy W Schmidt, Yunpeng Wang, Masakazu Sugiyama, and Nicholas J Ekins-Daukes: “Hot carrier dynamics in InGaAs/GaAsP quantum well solar cells”, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 927, Seattle, Washington, June 19 (2011).
  15. Yunpeng Wang, Yu Wen, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “A superlattice solar cell with enhanced short circuit current and minimized drop in open circuit voltage”, Conference Record, the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), C9, 758, Seattle, Washington, June 19 (2011).
  16. Masaru Zaitsu, Akio Higo, Takuo Tanemura, and Yoshiaki Nakano: “Optically clocked flip-flop operation based on coupled DBR laser diode”, 16th Opto-Electronics and Communications Conference (OECC 2011), 6D4_2, pp. 291-292, Kaohsiung, Taiwan, July 6 (2011).
  17. Masakazu Sugiyama, Yunpeng Wang, Hassanet Sodabanlu, Shaojun Ma, Hiromasa Fujii, Kentaroh Watanabe, and Yoshiaki Nakano: “Optical in situ monitoring of strain evolution and relaxation in lattice-mismatched InGaAs/GaAsP multiple quantum wells by MOVPE”, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy, Monterey, California, July 31 (2011).
  18. Shaojun Ma, Yunpeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs”, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy, Monterey, California, July 31 (2011).
  19. Yunpeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Management of highly-strained hetero-interfaces in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application”, 15th U.S. Biennal Workshop on Organometallic Vapor Phase Epitaxy, Monterey, California, July 31 (2011).
  20. Akio Higo, Taelim Lee, Satoshi Maruyama, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi: “Transmission color control by stacked wire-grid polarizers with in-plane rotation”, International Conference on Optical MEMS and Nanophotonics (OMN 2011), PO25-20007499, pp. 209-210, Istanbul, Turkey, August 8 (2011).
  21. Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi : “Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction”, 8th IEEE International Conference on Group IV Photonics (GFP), WB5, pp. 36-38, London, UK, September 14 (2011).
  22. Taketo Aihara, Yosuke Nakano, Atsuhiko Fukuyama, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano, and Tetsuo Ikari : “Non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum wells for solar cell application”, Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM 2011), L-1-2, Nagoya, Japan, September 28 (2011).
  23. Soohyeck Choi, Masaru Zaitsu, Akio Higo, Takuo Tanemura, and Yoshiaki Nakano: “Numerical demonstration of InP 1xN planar optical switch based on beam deflection”, Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM 2011), P-7-18, Nagoya, Japan, September 29 (2011).
  24. ShaoJun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Gas sequence effect on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2D-4P-10, Fukuoka, Japan, November 28 (2011).
  25. Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Effects of increasing well number on carrier transport in Eg = 1.2eV InGaAs / GaAsP multiple quantum well solar cells”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2B-4O-06, Fukuoka, Japan, November 28 (2011).
  26. Hiromasa Fujii, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: “A large number stack of Eg=1.2eV InGaAs / GaAsP multiple quantum wells with graded buffer layers for enhanced infrared response”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2D-4P-13, Fukuoka, Japan, November 28 (2011).
  27. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama and Yoshiaki Nakano: “Effects of background Zn doping on the performance of MOVPE-grown InGaAs / GaAsP multiple quantum wells solar cells”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-05, Fukuoka, Japan, November 28 (2011).
  28. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Impact of strain accumulation on InGaAs / GaAsP multiple quantum wells solar cells: direct correlation between in situ strain measurement and cell performances”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-06, Fukuoka, Japan, November 28 (2011).
  29. Yunpeng Wang, Kentaroh Watanabe,Hiromasa Fujii, Shaojun Ma, Masakazu Sugiyama, and Yoshiaki Nakano: “Carrier transport through super-lattice region in a multiple quantum well solar cell”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-07, Fukuoka, Japan, November 28 (2011).
  30. Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Deep multiple stepped quantum well (MSQW) solar cell”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-09, Fukuoka, Japan, November 28 (2011).
  31. Kentaroh Watanabe, Yugo Yamada, Minato Senou, Masakazu Sugiyama, and Yoshiaki Nakano: “Fabrication of monolithic integrated series-connected GaAs PV cells for concentrator application”, Technical Digest of 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 4D-4P-21, Fukuoka, Japan, November 28 (2011).
  32. Masafumi Yokoyama, Rena Suzuki1 , Noriyuki Taoka, Wipakorn Jevasuwan2 , Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiai Nakano, Mitsuru Takenaka, and Shinichi Takagi: “Surface cleaning effect on III-V oxide for InGaAs(100), (111)A, and (111)B surfaces and their Al2O3 MOS interfaces by using (NH4)2S solution”, 42nd IEEE Semiconductor Interface Specialist Conference (SISC 2011), P.22, pp. 1-2, Arlington, Virginia, December 1 (2011).
  33. Masakazu Sugiyama, Yunpeng Wang, Yu Wen, Kentaroh Watanabe, and Yoshiaki Nakano: “Exploring the potential of quantum wells for efficiency enhancement in photovoltaic cells”, Abstract, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices (Part of SPIE Photonics West OPTO 2012), Paper 8267-11, San Francisco, CA, USA, January 23 (2012).
  34. Louise C. Hirst, Markus Furher, Daniel J. Farrell, Arthur Le Bris, Jean-Franc?ois Guillemoles, Murad J. Y. Tayebjee, Raphael Clady, Timothy W. Schmidt, Masakazu Sugiyama, Yunpeng Wang, and Nicholas J. Ekins- Daukes: “InGaAs/GaAsP quantum wells for hot carrier solar cells”, Abstract, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices (Part of SPIE Photonics West OPTO 2012), Paper 8267-31, San Francisco, CA, USA, January 23 (2012).
  35. Myung-Joon Kwack, Tomofumi Oyama, Yasuaki Hashizume, Shinji Mino, Masaru Zaitsu, Takuo Tanemura, and Yoshiaki Nakano : “Integrated optical buffer using InP 1x8 switch and silica-based delay line circuit”, Technical Digest CD, Conference on Optical Fiber Communication (OFC/NFOEC2011), OTh4D, 2, pp. 1-3, Los Angeles, CA, March 8 (2012).
  36. Masanori Kubota, Yoshio Mita, Takeshi Momose, Aiko Kondo, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama: “A 50 nm-wide 5μm-deep copper vertical gap formation method by a gap-narrowing post-process with supercritical fluid deposition for Pirani gauge operating over atmospheric pressure”, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), pp. 204-207, Paris, France, January 29 (2012).

総説・解説論文/ Review Papers

  1. Yoshiaki Nakano: “Principle and frontier of epitaxial compound semiconductor photovoltaic cells toward efficiencies more than 50%”, Proceedings of the 5th Forum on Nano and Giga Challenges in Electronics, Photonics, and Renewable Energy (NGC 2011), p. 139, Moscow, Russia, September 12-16 (2011).
  2. Yoshiaki Nakano: “Ultra-high efficiency photovoltaic cells for large scale solar power generation”, AMBIO: A Journal of the Human Environment, vol. 41, Supplement 2, pp. 125-131 (2012).
  3. Yoshiaki Nakano: “Monolithically integrated phased-array switch”, Asia Communications and Photonics Conference and Exhibition (ACP 2011), 8308-1, Shanghai, China, November 14 (2011).
  4. 横山正史, 金相賢, 張睿, 田岡紀之, 卜部友二, 前田辰郎, 高木秀樹, 安田哲二, 山田永, 市川磨, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一: “次世代高性能CMOS実現に向けた高移動度III-V/GeチャネルMOSFETの集積化 (Integration of high-mobility III-V/Ge channel MOSFETs for high-performance CMOS)”, 第59回応用物理学関係連合講演会講演予稿集, 16a-A1-1, 早稲田大学, 3月16日 (2012).

シンポジウム・研究会・大会等発表/ Symposium,etc...

  1. 中野義昭: “大規模太陽光発電に向けた超高効率太陽電池の研究開発”, JIEP最先端実装技術シンポジウム, 6月2日 (2011).
  2. Katsushi Fujii, Takashi Kato, Keiichi Sato, Tsutomu Minegishi, Takahiro Yamada, Hisanori Yamane, Takafumi Yao, Masakazu Sugiyama, and Yoshiaki Nakano: “Difference of GaN photoelectrochemical properties in growth method”, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), We1-19, Biwako, Shiga, June 29 (2011).
  3. Masakazu Sugiyama, Yunpeng Wang, Kentaroh Watanabe, and Yoshiaki Nakano: “A superlattice solar cell as a middle cell of 3-junction solar cells for improved current matching and higher efficiency”, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-2, Biwako, Shiga, June30 (2011).
  4. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Growth optimization of InGaAs/GaAsP strain-compensated multiple quantum wells using in-situ curvature measurement and simulation”, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-3, Biwako, Shiga, June 30 (2011).
  5. Yu Wen, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: “Enhanced-depletion-width MSQW solar cell by metal-organic vapor-phase epitaxy”, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-4, Biwako, Shiga, June30 (2011).
  6. Hiromasa Fujii, Yunpeng Wang, Yoshiaki Nakano, and Masakazu Sugiyama: “Effects of quantum wells position on carrier transport in multiple quantum well solar cells with p-type background doping”, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-5, Biwako, Shiga, June 30 (2011).
  7. Taketo Aihara, Atsuhiko Fukuyama, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano, and Tetsuo Ikari: “Non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum wells for solar cell application by using a piezoelectric photothermal method InGaAs/GaAsP”, Extended Abstracts of the 30th Electronic Materials Symposium (EMS-30), Th1-6, Biwako, Shiga, June 30 (2011).
  8. 李凌瀚, 多喜川良, 肥後昭男, 日暮栄治, 杉山正和, 中野義昭: “直接接合法による光発振と光子センシングためのSilicon/InGaAsPヘテロ構造 (Silicon/InGaAsP heterostructure for Fabry-Perot lasing and photon sensing by plasma assisted direct bonding)”, 第36回日本光学会光学シンポジウム, 講演番号2, pp. 5-6, 東京大学, 7月7日 (2011).
  9. 横山正史, 金相賢, 張睿, 田岡紀之, 卜部友二, 前田辰郎, 高木秀樹, 安田哲二, 山田永, 市川磨, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一: “基板貼り合わせ法による自己整合型InGaAs nMOSFET/Ge pMOSFET集積化CMOSの実現 (CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding)”, 応用物理学会シリコンテクノロジー分科会第139回研究集会, 1, 産総研臨海副都心センター, 7月21日 (2011).
  10. 財津優, 肥後昭男, 種村拓夫, 中野義昭: “結合モート? DBRレーサ?を用いた緩和振動低減全光フリッフ?・フロッフ?動作”, 第72回応用物理学会学術講演会講演予稿集, 31a-ZN-8, 山形大学, 8月31日 (2011).
  11. 藤井宏昌, 王云鵬, 杉山正和, 中野義昭: “GaAs/InGaAs緩衝層を用いたInGaAs/GaAsP多重量子井戸の成長”, 第72回応用物理学会学術講演会講演予稿集, 31a-ZA-14, 山形大学, 8月31日 (2011).
  12. 馬少駿, ハッサネット ソダーバンル 渡辺健太郎, 杉山正和, 中野義昭: “InGaAs/GaAsP歪み補償量子井戸のMOVPEにおけるヘテロ界面の影響のin situウエハー曲率によるモニタリング”, 第72回応用物理学会学術講演会講演予稿集, 31a-ZA-15, 山形大学, 8月31日 (2011).
  13. 穴澤風彦, ハッサネット ソダーバンル, 藤井克司, 中野義昭, 杉山正和: “MOVPE法によるInGaN/AlN多重量子井戸の結晶成長およひ?評価”, 第72回応用物理学会学術講演会講演予稿集, 31a-ZE-8, 山形大学, 8月31日 (2011).
  14. 横山正史, 金相賢, 張睿, 田岡紀之, 卜部友二, 前田辰郎, 高木秀樹, 安田哲二, 山田永, 市川磨, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一: “基板貼り合わせ法を用いたIII-V/Ge CMOSトランジスタ集積化”, 第72回応用物理学会学術講演会講演予稿集, 1a-P7-7, 山形大学, 9月1日 (2011).
  15. 渡辺健太郎, 渡邊良祐, 杉山正和, 宮野健次郎, 中野義昭: “集光錐と光キャピティによる集光型太陽電池用2次光学素子の検討”, 第72回応用物理学会学術講演会講演予稿集, 1a-H-3, 山形大学, 9月1日 (2011).
  16. 王云鵬, 文瑜, 相原健人, 福山敦彦, 碇哲雄, 杉山正和, 中野義昭: “InGaAs/GaAsP歪み補償超格子セルによるキャリア輸送の効率化”, 第72回応用物理学会学術講演会講演予稿集, 1a-H-6, 山形大学, 9月1日 (2011).
  17. 文瑜, 王云鵬, 杉山正和, 中野義昭: “階段ポテンシャル量子井戸セルの空乏層拡張による性能向上”, 第72回応用物理学会学術講演会講演予稿集, 1a-H-7, 山形大学, 9月1日 (2011).
  18. 相原健人, 福山敦彦, 王云鵬, 杉山正和, 中野義昭, 碇哲雄: “InGaAs/GaAsP歪補償量子井戸太陽電池吸収層でのキャリア再結合損失評価”, 第72回応用物理学会学術講演会講演予稿集, 1a-H-8, 山形大学, 9月1日 (2011).
  19. ハッサネット ソダーバンル, 馬少駿, 渡辺健太郎, 杉山正和, 中野義昭: “MOVPE成長InGaAs/GaAsP多重量子井戸におけるZnコンタミの影 響”, 第72回応用物理学会学術講演会講演予稿集, 1a-H-9, 山形大学, 9月1日(2011).
  20. 大和文彦, 財津優, 肥後昭男, 種村拓夫, 中野義昭: “光集積回路における InGaAsP/InP 偏波コンバータの作製 (Fablication of InGaAsP/InP polarization converter for photonic integrated circuits)”, 電子情報通信学会エレクトロニクスソサイエティ大会(北海道大学)講演論文集1, C-3-14, p. 136, 9月13日 (2011).
  21. 崔洙赫, 財津優, 肥後昭男, 種村拓夫, 中野義昭: “ビーム曲折型 1xN 光スイッチの部分エッチングによるクロストーク低減 (Reducing crosstalk by partially etched InP 1xN planar optical switch based on beam deflection)”, 電子情報通信学会エレクトロニクスソサイエティ大会(北海道大学)講演論文集1, C-3-42, p. 164, 9月13日 (2011).
  22. 郭命俊, 橋詰泰彰, 美野真司, 財津優, 種村拓夫, 中野義昭: “フェーズアレイ 1×8 集積光スイッチと石英系 PLC 遅延回路を用いた小型光バッファ (Compact optical buffer using integrated phased-array 1×8 switch and silica-based PLC delay line)”, 電子情報通信学会エレクトロニクスソサイエティ大会(北海道大学)講演論文集1, C-3-73, p. 195, 9月13日 (2011).
  23. 杉山正和, 王云鵬, 渡辺健太郎, 中野義昭: “高効率太陽電池用InGaAs/GaAsP超格子のMOVPEにおけるヘテロ界面制御”, 化学工学会第43回秋季大会研究発表講演要旨集(名古屋工業大学), U215, 9月14日 (2011).
  24. 馬少駿, Hassanet Sodabanlu, 渡辺健太郎, 杉山正和, 中野義昭: “Using in-situ curvature measurement and simulation to optimize growth of InGaAs/GaAsP strain-compensated multiple quantum wells”, 化学工学会第43回秋季大会研究発表講演要旨集(名古屋工業大学), U216, 9月14日 (2011).
  25. 渡辺健太郎, ハッサネット ソダーバンル, 馬少駿, 杉山正和, 中野義昭: “InxGa(1?x)PのMOVPEにおけるその場曲率観察による組成決定の手法”, 化学工学会第43回秋季大会研究発表講演要旨集(名古屋工業大学), U217, 9月14日 (2011).
  26. Akio Higo, Taelim Lee, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi : “A color-changing pixel by wavelength dependent nanowire grid polarizer’s”, Book of Abstracts, The 28th Sensor Symposium on Sensors, Micromachines, and Applied Systems/the 3rd Integrated MEMS Symposium, D1-3, p. 40, Tokyo, Japan, September 26 (2011).
  27. 渡辺健太郎, 王云鵬, Hassanet Sodabanlu, 文喩, 馬少駿, 劉才, 藤井宏昌, Kim Boram, 瀬能未奈都, 杉山正和, 中野義昭: “タンテ?ム型太陽電池の高効率化へ向けた量子井戸構造の開発”, 第3回薄膜太陽電池セミナー, PP-30, p. 1, ラフレさいたま, 埼玉, 10月24日 (2011).
  28. 財津優, 肥後昭男, 種村拓夫, 中野義昭: “結合モードDBRレーザを用いた光クロック同期全光フリップ・フロップの数値解析 (Numerical analyses of optically-clocked all-optical flip-flop using a coupled-mode DBR laser diode)”, 電子情報通信学会技術研究報告(レーザ・量子エレクトロニクス研究会, OCS, OPE共催), vol. 111, no. 267, LQE2011-71, pp. 87-92, 10月27日 (2011).
  29. Yoshiaki Nakano: “Post-silicon solar cells for ultra-high efficiency”, Abstracts, 4th International Symposium on Innovative Solar Cells, pp. 1-25, Tokyo, Japan, March 5 (2012).
  30. 横山正史, 鈴木麗菜, 田岡紀之, ウィパコーン　ジェパスワン, 前田辰郎, 安田哲二, 市川磨, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中 充, 高木信一: “硫化アンモニウム溶液て?表面処理したInGaAs(100), (111)A, (111)BのMOS界面特性 (Surface cleaning effect for InGaAs (100), (111)A, and (111)B by an (NH4)2Sx solution and their MOS interface properties)”, 第59回応用物理学関係連合講演会講演予稿集, 17p-A4-17, 早稲田大学, 3月17日 (2012).
  31. 中野陽介, 相原健人, 藤井宏昌, 福山敦彦, 杉山正和, 中野義昭, 碇哲雄: “圧電素子光熱変換分光法によるInGaAs/GaAsP歪補償量子井戸太陽電池のキャリア再結合損失過程の積層数依存性”, 第59回応用物理学関係連合講演会講演予稿集, 17a-E1-3, 早稲田大学, 3月17日 (2012).
  32. 藤井宏昌, 渡辺健太郎, 杉山正和, 中野義昭: “補償ドーピングによるInGaAs/GaAsP量子井戸太陽電池のキャリア回収効率向上”, 第59回応用物理学関係連合講演会講演予稿集, 18a-C1-5, 早稲田大学, 3月18日 (2012).
  33. 瀬能未奈都, 渡辺健太郎, 杉山正和, 中野義昭: “高集光発電用マイクロ集積直列接続GaAs太陽電池の試作 (Fabrication of the monolithic iIntegrated micro series-connected GaAs solar cells for concentrator photovoltaics)”, 第59回応用物理学関係連合講演会講演予稿集, 18a-C1-7, 早稲田大学, 3月18日 (2012).
  34. ハッサネット ソダーバンル, 馬少駿, 渡辺健太郎, 杉山正和, 中野義昭:” InGaAs/GaAsP多重量子井戸太陽電池における歪み蓄積量とセル特性の相関 (Correlation between performance of InGaAs/GaAsP multiple quantum wells solar cell and accumulating stain inside the structure)”, 第59回応用物理学関係連合講演会講演予稿集, 18p-C1-4, 早稲田大学, 3月18日 (2012).
  35. 渡辺健太郎, 王云鵬, ハッサネット ソダーバンル, 馬少駿, 杉山正和, 中野義昭: “InGaAs/GaAsP歪み補償超格子太陽電池における開放電圧の集光依存性 (Effect of concentration ratio on the open-circuit voltage of InGaAs/GaAsP strain-balanced super-lattice solar cells)”, 第59回応用物理学関係連合講演会講演予稿集, 18p-C1-6, 早稲田大学, 3月18日 (2012).
  36. 渡邉翔大, 渡辺健太郎, 杉山正和, 中野義昭: “Si(111)上InAsの選択ヘテロエヒ?タキシャル成長における界面電気伝導特性”, 第59回応用物理学関係連合講演会講演予稿集, 16a-A8-2, 早稲田大学, 3月16日 (2012).
  37. 馬少駿, ハッサネット ソダーバンル, 渡辺健太郎, 杉山正和, 中野義昭: “InGaAs/GaAsP歪み補償量子井戸における界面In偏析のウエハ曲率観察による定量 (Investigation of indium segregation effect via wafer curvature monitoring in InGaAs/GaAsP strain-compensated MQWs)”, 第59回応用物理学関係連合講演会講演予稿集, 16a-A8-12, 早稲田大学, 3月16日 (2012).
  38. 久保田雅則, 三田吉郎, 百瀬健, 近藤愛子, 霜垣幸浩, 中野義昭, 杉山正和: “高アスペクト比垂直ナノギャップを用いた高圧対応MEMSピラニーゲージ”, 第59回応用物理学関係連合講演会講演予稿集, 16a-E3-9, 早稲田大学, 3月16日 (2012).
  39. 崔成漢, 郭命俊, 財津優, 崔洙赫, 肥後昭男, 種村拓夫, 中野義昭: “フェーズドアレイを用いた半導体光偏向素子の設計”, 電子情報通信学会総合大会(岡山大学)エレクトロニクス講演論文集1, C-3-80, 3月23日 (2012).
  40. 菊田和孝, 肥後昭男, 中野義昭: “垂直出射型光導波路素子のための InP 斜めドライエッチングの開発”, 平成24年電気学会全国大会講演論文集, 3-135, 広島工業大学, 3月21日 (2012).

その他/ Others

  1. エネ政策抜本見直しを，東大先端研が討論会，技術開発の必要性訴え, 日本経済新聞(朝刊), 5面, 6月16日 (2011).
  2. 中野義昭, “未来を紡ぎ出す「新エネルギー」の選択 ?太陽光発電”, 東京大学広報誌「淡青」, vol. 25, p. 48, 10月7日 (2011).