NAKANO and TANEMURA Laboratory, Dept. of Electrical Engineering

Publications List 2010 (2010.4.1-2011.3.31)

Journal Papers

  1. Nakano : “High material efficiency MOVPE growth with in situ monitoring,” Journal of Crystal Growth, vol. 312, Issue 8, pp. 1343-1347, April 1 (2010).
  2. Yoshiyuki Kondo, Momoko Deura, Yuki Terada, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, and Masakazu Sugiyama : “Initial growth of InAs on P-terminated Si (111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si,” Journal of Crystal Growth, vol. 312, Issue 8, pp. 1348-1352, April 1 (2010).
  3. Momoko Deura, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, and Masakazu Sugiyama: “Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE,” Journal of Crystal Growth, vol. 312, Issue 8, pp. 1353-1358, April 1 (2010).
  4. Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama: “In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP,” Journal of Crystal Growth, vol. 312, Issue 8, pp. 1359-1363, April 1 (2010).
  5. Yunpeng Wang, Ryusuke Onitsuka, Momoko Deura, Wen Yu, Masakazu Sugiyama, and Yoshiaki Nakano: “In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells,” Journal of Crystal Growth, vol. 312, Issue 8, pp. 1364-1369, April 1 (2010).
  6. Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface,” Applied Physics Letters, vol. 96, no. 14, pp. 142106-1-3, April 7 (2010).
  7. Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama : “Metalorganic vapor phase epitaxy of GaAs with AlP surface passivation layer for improved metal oxide semiconductor characteristics,” Japanese Journal of Applied Physics, vol. 49, no. 4, pp. 04DF04-1-6, April 20 (2010).
  8. Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano: “Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN,” Physica Status Solidi A, vol. 207, no. 6, pp. 1375-1378, June (2010).
  9. Ibrahim Murat Soganci, Nicola Calabretta, Takuo Tanemura, Wenrui Wang, Oded Raz, Kazuhide Higuchi, Kevin A. Williams, Tjibbe de Vries, Harmen Joseph Sebastian Dorren, and Yoshiaki Nakano: “160-Gb/s optical packet switching subsystem with a monolithic optical phased-array switch,” IEEE Photonics Technology Letters, vol. 22, no. 11, pp. 817-819, June (2010).
  10. Masakazu Sugiyama, Satoshi Yasukochi, Tomonari Shioda, Yukihiro Shimogaki, and Yoshiaki Nakano: “Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth,” Physica Status Solidi C, vol. 7, no. 7-8, pp. 2085-2087, July (2010).
  11. Koen Huybrechts, Takuo Tanemura, Koji Takeda, Yoshiaki Nakano, Roel Baets, and Geert Morthier: “All-optical 2R regeneration using the hysteresis in a distributed feedback laser diode,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 16, no. 5, pp. 1434-1440 (2010).
  12. Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano: “Monolithically integrated InGaN-based multicolor light-emitting diodes fabricated by wide-sripe selective area metal?organic vapor phase epitaxy,” Applied Physics Express, vol. 3, no. 9, pp. 092104-1-3, September (2010).
  13. Tomohiro Amemiya, Kenji Abe, Takuo Tanemura, Tetsuya Mizumoto, and Yoshiaki Nakano: “Nonreciprocal polarization conversion in asymmetric magnetooptic waveguide,” IEEE Journal of Quantum Electronics, vol. 46, no. 11, pp. 1662-1669, November (2010).
  14. Yoshiyuki Kondo, Momoko Deura, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, and Masakazu Sugiyama: “Dependences of initial nucleation on growth conditions of InAs on Si by micro-channel selective-area metal?organic vapor phase epitaxy,” Japanese Journal of Applied Physics, vol. 49, no. 12, pp. 125601-1-5, December (2010).
  15. Jung-Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki: “Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770?C,” Journal of Crystal Growth, vol. 314, Issue 1, pp. 252-257, January (2011).
  16. Ryusuke Onitsuka, Masakazu Sugiyama, and Yoshiaki Nakano: “High material-efficiency MOVPE of GaAs without degradation of photovoltaic performance,” Journal of Crystal Growth, vol. 315, issue 1, pp. 53-56, January (2011).
  17. Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi : “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal?organic source,” Japanese Journal of Applied Physics, vol. 50, no. 1, pp. 010105-1-5, January (2011).
  18. Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki: “Characterization of indium segregation in metalorganic vapor phase epitaxy-grown InGaP by Schottky barrier height measurement,” Japanese Journal of Applied Physics, vol. 50, no. 1, pp. 011201-1-3, January (2011).
  19. Takuo Tanemura, Ibrahim Murat Soganci, Tomofumi Oyama, Takaharu Ohyama, Shinji Mino, Kevin Williams, Nicola Calabretta, Harmen J. S. Dorren, and Yoshiaki Nakano: “Large-capacity compact optical buffer based on InP integrated phased-array switch and coiled fiber delay lines,” Journal of Lightwave Technology, vol. 29, no. 4, pp. 396-402, February (2011).

International Conferences

  1. Hassanet Sodabanlu, Jeong Seung Yang, Masakazu Sugiyama, Yukihiro Shimogaki, Takuo Tanemura, and Yoshiaki Nakano: “Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells fabricated by metalorganic vapor phase epitaxy,” Proceedings of the 15th European Conference on Integrated Optics (ECIO 2010), WeP13, pp. 1-2, Cambridge, UK, April 7 (2010).
  2. Lin-Hang Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano: “Hetero-integration of high doped silicon micro wire to III-V active layer for electrical pumping light emission by plasma assisted bonding,” International Conference on Electronics Packaging (ICEP 2010), FD4-1, Sapporo, Japan, May14 (2010).
  3. Masakazu Sugiyama, Kenichi Sugita, Yunpeng Wang, and Yoshiaki Nakano: “Strain-balanced MOVPE of InGaAs/GaAsP multiple quantum wells using in situ surface reflectance anisotropy and curvature monitoring,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 13, Incline Village, Nevada, May 24 (2010).
  4. Yoshiyuki Kondo, Momoko Deura, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, and Masakazu Sugiyama: “Highly lateral growth of InGaAs on Si (111) with reduced size of selective growth window,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 12, Incline Village, Nevada, May 24 (2010).
  5. Ryusuke Onitsuka, Takuo Tanemura, Masakazu Sugiyama, and Yoshiaki Nakano: “High-material-efficiency MOVPE of GaAs without degradation of photovoltaic performances,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 18, Incline Village, Nevada, May 25 (2010).
  6. Jungseung Yang, Sodabanlu Hassanet, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki: “Intersubband absorption of 1.55 μm in AlN/GaN multi quantum wells grown at 770?C by metal organic vapor phase epitaxy using pulse injection method,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 27, Incline Village, Nevada, May 26 (2010).
  7. Yuki Terada, Yukihiro Shimogaki, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, and Masakazu Sugiyama: “Improvement of GaAs MIS characteristics with the optimum thickness of AlP in situ passivation layer,” the 15th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE XV), p. 33, Incline Village, Nevada, May 27 (2010).
  8. Masakazu Sugiyama, Soohyeck Choi, Wen Yu, Yunpeng Wang, and Yoshiaki Nakano: “Design of offset quantum well solar cell for improved efficiency,” Abstract, Internarional Symposium on Compound Semiconductors (ISCS 2010), WeC3-5, p. 256, Takamatsu Japan, June 2 (2010).
  9. Ling-Han Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano: “Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology,” Conference Proceedings, 22nd International Conference on Indium Phosphide and Related Materials (IPRM '10), ThA1-1, pp. 385-388, Takamatsu, Japan, June 3 (2010).
  10. Michael Breedon, Hassanet Sodabanlu, Kourosh Kalantar-Zadeh, Yoshiaki Nakano, and Masakazu Sugiyama: “Temperature dependent red shift of an intersubband transition in GaN/AlN multiple quantum wells,” Abstract, Internarional Symposium on Compound Semiconductors (ISCS 2010), FrP79, p. 437, Takamatsu Japan, June 4 (2010).
  11. Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi, Yuji Urabe, Hiroyuki Ishii, Noriyuki Miyata, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding,” Conference Proceedings, 22nd International Conference on Indium Phosphide and Related Materials (IPRM '10), FrB2-3, pp. 500-503, Takamatsu, Japan, June 4 (2010).
  12. Gengo Takahashi1, Tomohiro Amemiya, Koji Takeda, Takuo Tanemura, Akio Higo, and Yoshiaki Nakano: “TM-mode waveguide isolator monolithically integrated with InP active devices,” Conference Proceedings, 22nd International Conference on Indium Phosphide and Related Materials (IPRM '10), FrA1-5, pp. 461-464, Takamatsu, Japan, June 4 (2010).
  13. Masafumi Yokoyama, Yuji Urabe, Tetsuji Yasuda, Hideki Takagi, Hiroyuki Ishii, Noriyuki Miyata, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “High mobility III-V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers,” Digest of Technical Papers, 2010 Symposium on VLSI Technology, 22.3, pp. 235-236, Honolulu, Hawaii, June 17 (2010).
  14. Kentaroh Watanabe, Akio Higo, Masakazu Sugiyama, and Yoshiaki Nakano: “Self-assembled SiO2 particle coating on 2 layer anti-reflection films for efficiency enhancement of GaAs PV cells,” Conference Record, the 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Area 3, Paper #58, pp. 205-208, Honolulu, Hawaii, June 21 (2010).
  15. Yu Wen, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: “Strain-compensated multiple stepped quantum wells (SC-MSQWs) cell for enhanced spectral response and carrier transport,” Conference Record, the 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Area 1, Paper #98, pp. 385-388, Honolulu, Hawaii, June 22 (2010).
  16. Masakazu Sugiyama, Yunpeng Wang, Soohyeck Choi, Yu Wen, and Yoshiaki Nakano: “How shall we put multiple quantum wells in p-i-n structure for efficiency enhancement?,” Conference Record, the 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Area 1, Paper #96, pp. 376-379, Honolulu, Hawaii, June 22 (2010).
  17. Yunpeng Wang, Yu Wen, Masakazu Sugiyama, and Yoshiaki Nakano: “InGaAs/GaAsP strain-compensated superlattice solar cell for enhanced spectral response,” Conference Record, the 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Area 1, Poster #877-C9, pp. 3383-3385, Honolulu, Hawaii, June 24 (2010).
  18. Akio Higo, Francesco Pastorelli, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “Design and fabrication of broadband anti-reflection sub-wavelength periodic structure for solar cells,” Proceedings, Renewable Energy 2010, O-Pv-5-5, pp. 1-4, Yokohama, Japan, June 29 (2010).
  19. Masakazu Sugiyama, Yunpeng Wang, Soohyeck Choi, Yu Wen, and Yoshiaki Nakano: “Do quantum wells really improve conversion efficiency of III-V photovoltaics? -improvement through device design and epitaxial growth,” Proceedings, Renewable Energy 2010, OP-13-4, pp. 1-4, Yokohama, Japan, June 29 (2010).
  20. Tomofumi Oyama, Takuo Tanemura, Ibrahim Murat Soganci, Takaharu Ohyama, Shinji Mino, and Yoshiaki Nakano: “Variable optical buffer using integrated 1×8 optical phased-array switch,” Conference Proceedings CD, International Conference on Photonics in Switching (PS 2010), PTuC5, pp. 1-3, Monterey, California, July 27 (2010).
  21. Masaru Zaitsu, Koji Takeda, Mitsuru Takenaka, Takuo Tanemura, and Yoshiaki Nakano: “All-optical flip-flop with optical clock signal using Mach-Zehnder interferometer bistable laser diode,” Conference Proceedings CD, International Conference on Photonics in Switching (PS 2010), PTuC2, pp. 1-3, Monterey, California, July 27 (2010).
  22. Koen Huybrechts1, Christophe Peucheret, Jorge Seoane, Takuo Tanemura, Koji Takeda, Yoshiaki Nakano, Roel Baets, and Geert Morthier: “Low-power colorless all-optical 2R regeneration of 25 Gb/s NRZ signals using a standard DFB laser,” Conference Proceedings CD, International Conference on Photonics in Switching (PS 2010), PWA2, pp. 1-3, Monterey, California, July 28 (2010).
  23. Satoshi Maruyama, Akio Higo, Muneki Nakada, K. Takahashi, T. Takahashi, Makoto Mita, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi: “A mixed-signal analysis for tilted MEMS torsion mirror devices,” Technical Digest, 2010 International Conference on Optical MEMS and Nanophotonics, PO-3, pp. 109-110, Sapporo, Japan, August 11 (2010).
  24. Taelim Lee, Akio Higo, Hiroyuki Fujita, Yoshiaki Nakano, and Hiroshi Toshiyoshi: “A study on color-tunable MEMS device based on plasmon photonics,” Technical Digest, 2010 International Conference on Optical MEMS and Nanophotonics, PO-2, pp. 107-108, Sapporo, Japan, August 11 (2010).
  25. Tatsuki Fujiwara, Yoshiaki Nakano, and Masakazu Sugiyama: “Continuous wavelength modulation from semi-polar InGaN/GaN MQWs with vapor-phase-diffusion-based selective-area pyramidal growth,” International Workshop on Nitride Semiconductors (IWN 2010), AP1.22, Tampa, Florida, USA, September 20 (2010).
  26. Ibrahim Murat Soganci, Takuo Tanemura, Koji Takeda, Masaru Zaitsu, Mitsuru Takenaka, and Yoshiaki Nakano: “Monolithic InP 100-port photonic switch,” Proceedings CD, 36th European Conference on Optical Communications (ECOC 2010), PD1.5, pp. 1-3, Torino, Italy, September 23 (2010).
  27. Hassanet Sodabanlu, Jung-Seung Yang, Takuo Tanemura, Msakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano: “Intersubband absorption saturation in metalorganic vapor phase epitaxy grown GaN/AlN multiple quantum wells with low loss Si3N4 waveguide,” International Workshop on Nitride Semiconductors (IWN 2010), C3.10, Tampa, Florida, USA, September 23 (2010).
  28. Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi, Hisashi Yamada, Yuji Urabe, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “High quality thin body III-V-on-insulator channel layer transfer on Si wafer using direct wafer bonding,” Meeting Abstracts, 218th Meeting of the Electrochemical Society, Symposium E11 (Semiconductor Wafer Bonding 11: Science, Technology, and Application in Honor of Ulrich Gosele), ECS Transactions, Semiconductor Wafer Bonding 11: Science, Technology, and Applications, vol. 33, no. 4, pp. 391-401,Paper 1737, Las Vegas, Nevada, October 13 (2010).
  29. Masafumi Yokoyama, Ryo Iida, Sang-Hyeon Kim, Noriyuki Taoka, Yuji Urabe, Tetsuji Yasuda, Hideki Takagi, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding,” Technical Digest, IEEE International Electron Devices Meeting (IEDM 2010), 3.1, pp. 46-49, San Francisco, California, USA, December 6 (2010).
  30. Tomofumi Oyama, Ibrahim Murat Soganci, Takuo Tanemura, and Yoshiaki Nakano: “1x8 InP optical phased-array switch with integrated inline power monitors,” Technical Digest CD, Conference on Optical Fiber Communication (OFC/NFOEC 2011), OThY5, pp. 1-3, Los Angeles, California, March 10 (2011).

Books

  1. ヤリーヴ，イェー (多田邦雄, 神谷武志監訳, 石川卓哉, 板谷太郎, 伊藤文彦, 岡田至崇, 鎌田憲彦, 土屋昌弘, 中野義昭, 中林隆志, 林秀樹 共訳): “光エレクトロニクス 基礎編 (原書6版),” 丸善株式会社(東京) (2010).

Review Papers

  1. 杉山正和, 渡辺健太郎, 肥後昭男, 中野義昭: “(研究紹介) 高効率量子タンデム太陽電池 (High-efficiency quantum structure tandem solar cells),” 応用物理, vol. 79, no. 5, pp. 435-439 (2010).
  2. 中野義昭, 杉山正和: “(特別講演) 超高効率太陽電池が拓く太陽光エネルギー利用の未来 (Future prospect of solar power generation with ultra-high efficiency solar cells),” 平成22年度 電気学会センサ・マイクロマシン部門 総合研究会プログラム, pp. 19-22, 6月17日 (2010).
  3. Takuo Tanemura, Ibrahim Murat Soganci, and Yoshiaki Nakano: “(Invited Paper) Semiconductor photonic integrated switches and buffers for optical packet routing,” Technical Digest CD, 9th International Conferences on Optical Internet (COIN 2010), TuB3-2, pp. 298-300, Jeju, Korea, July 13 (2010).
  4. Takuo Tanemura, Ibrahim Murat Soganci, and Yoshiaki Nakano: “(Invited Paper) Semiconductor photonic integrated switches and buffers for optical packet routing,” Technical Digest CD, 9th International Conferences on Optical Internet (COIN 2010), TuB3-2, pp. 298-300, Jeju, Korea, July 13 (2010).
  5. Yoshiaki Nakano: “(Plenary Talk) Ultra-high efficiency solar cell development activity in “SOLAR QUEST,” the international research center for global energy and environmental technologies, Technical Digest, 2010 International Conference on Optical MEMS and Nanophotonics, Invited Talk 1, pp. 1-2, Sapporo, Japan, August 9 (2010).
  6. Yoshiaki Nakano: “(Invited Paper) MOVPE and fabrication of 1.5 μm GaN/AlN multiple quantum well intersubband all-optical switch,” Abstracts of 2010 International Nano-Optoelectronics Workshop (iNOW), WeB3-1, pp. 80-81, Beijing and Changchun, China, August 11 (2010).
  7. Masakazu Sugiyama and Yoshiaki Nakano: “(Invited) MOVPE technology of InGaAs/GaAsP strain-balanced quantum wells for improved efficiency of multi-junction solar cells,” Internationa Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2010), GC01, Jeju, Korea, November 24 (2010).
  8. Masakazu Sugiyama, Kentaroh Watanabe, and Yoshiaki Nakano: “(Invited) Design and growth improvement in quantum wells for high-efficiency tandem solar cells,” Workshop on Information, Nano and Photonics Technology, Kobe, Japan, December 3 (2010).

Symposium,etc...

  1. Yoshiaki Nakano: “Post-silicon solar cells -ultimate sustainable source of energy,” Joint Workshop on Secure-life Photonics, Tsinghua Week at Todai, Session 2, Hongo, Japan, May 13 (2010).
  2. 李泰林, 肥後昭男, 藤田博之, 中野義昭, 年吉洋: “プラズモン光学を応用したMEMS型可変色デバイスの検討 (A study on color-tunalbe MEMS device based on plasmon photonics),”電気学会研究会資料(センサ・マイクロマシン部門総合研究会, マイクロマシン・センサシステム研究会), MSS-10-11, pp. 45-49, 東京大学駒場リサーチキャンパス, 6月18日 (2010).
  3. 中野義昭: “光ネットワーキングの集積光デバイス技術,” 日本学術振興会 光ネットワークシステム技術第171委員会10周年記念公開シンポジウム講演資料集, pp. 62-67, 品川インターシティ, 6月24日 (2010).
  4. 竹中充, 横山正史, 杉山正和, 中野義昭, 高木信一: “III-V CMOS photonics プラットフォーム実現に向けた グレーティングカプラの作製 (InGaAsP grating coupler for III-V CMOS photonics platform),” 第71回応用物理学会学術講演会講演予稿集, p. 05-064, 14p-G-17, 長崎大学, 9月14日(2010).
  5. 財津優, 肥後昭男, 種村拓夫, 中野義昭: “光クロック信号に同期した全光フリッフ・フロップ動作の数値解析 (Numerical analysis of optically-clocked all-optical flip-flop operations),” 第71回応用物理学会学術講演会講演予稿集, p. 05-053, 14p-G-6, 長崎大学, 9月14日 (2010).
  6. 中野義昭: “(招待講演) 半導体集積光制御デバイスの研究動向と展望 (Trend and prospect of semiconductor integrated photonic devices),” 第71回応用物理学会学術講演会講演予稿集, p. 05-048, 14p-G-1, 長崎大学, 9月14日 (2010).
  7. 藤原達記, 中野義昭, 杉山正和: “ピラミッド上半極性面InGaN/GaN多重量子井戸の気相拡散に基づく発光波長変調 (Continuous wavelength modulation of semi-polar InGaN/GaN MQWs with vapor-phase-diffusion-based selective-area pyramidal growth),” 第71回応用物理学会学術講演会講演予稿集, p. 15-201, 15a-C-7, 長崎大学, 9月15日 (2010).
  8. 小山智史, イブラーヒム ムラット ソーアンジ, 大山貴晴, 美野真司, 種村拓夫, 中野義昭: “フェーズアレイ1x16集積光スイッチと小型ファイバ遅延線を用いた可変光バッファ (Tunable optical buffer using integrated phased-array 1x16 switch and compact fiber delay lines) ,” 電子情報通信学会エレクトロニクスソサイエティ大会(大阪府立大学) 講演論文集2, B-12-11, p. 301, 9月15日 (2010).
  9. 出浦桃子, 近藤佳幸, 竹中充, 高木信一, 中野義昭, 杉山正和: “微小領域選択MOVPEを用いたSi上InAs成長の基板表面処理条件依存性 (Dependence of InAs growth on treatment condition of Si surface using micro-channel selective-area MOVPE),” 第71回応用物理学会学術講演会講演予稿集, p. 15-090, 16a-ZV-8, 長崎大学, 9月16日 (2010).
  10. 近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和: “微小領域選択MOVPEにおけるSi(111)選択成長領域のInAsによる完全被覆とInGaAs横方 向成長への影響 (Complete coverage of Si(111) growth windows with InAs and its effect of InGaAs lateral growth in micro-channel selective area MOVPE),” 第71回応用物理学会学術講演会講演予稿集, p. 15-089, 16a-ZV-7, 長崎大学, 9月16日 (2010).
  11. 杉山正和, 王云鵬, 中野義昭: “MOVPEて?作製したInGaAs/GaAsP歪み補償超格子におけるヘテロ界面急峻化の検証 (Examination of abruptness of hetero-interfaces in InGaAs/GaAsP strain-balanced superlattice grown by MOVPE),” 第71回応用物理学会学術講演会講演予稿集, p. 15-088, 16a-ZV-6, 長崎大学, 9月16日 (2010).
  12. Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: “Interface modification in strain-balanced superlattice solar cells with MOVPE,” 第71回応用物理学会学術講演会講演予稿集, p. 15-087, 16a-ZV-5, 長崎大学, 9月16日 (2010).
  13. 鬼塚隆祐, 杉山正和, 中野義昭: “高原料効率MOVPEにより作製したGaAs太陽電池における不純物の影響 (Impurity effect on GaAs solar cells grown by high-material-efficiency MOVPE),” 第71回応用物理学会学術講演会講演予稿集, p. 15-086, 16a-ZV-4, 長崎大学, 9月16日 (2010).
  14. 横山正史, 山田永, 安田哲二, 高木秀樹, 卜部友二, 宮田典幸, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一: “Al2O3埋め込み酸化膜とS処理によるIII-V-OI MOSFETの電子移動度に対するチャネル膜厚依存性の改善 (Mobility enhancement of III-V-OI MOSFETs by Al2O3 buried oxide layers and S passivation),”第71回応用物理学会学術講演会講演予稿集, p. 13-221, 16a-ZE-7, 長崎大学, 9月16日 (2010).
  15. Masakazu Sugiyama and Yoshiaki Nakano: “III-V quantum-well solar cells: improvement through structure design and epitaxial growth,” Proceedings CD of Global COE Symposium on Secure-Life Electronics, paper 4.9, Tokyo, Japan, November 17 (2010).
  16. Takuo Tanemura, Yoshiaki Nakano, Ibrahim Murat Soganci, Tomofumi Oyama, and Masaru Zaitsu : “Semiconductor photonic integrated switches and buffers for optical routers and interconnects,” Proceedings CD of Global COE Symposium on Secure-Life Electronics, paper 2.29, Tokyo, Japan, November 17 (2010).
  17. Yoshiaki Nakano, Masakazu Sugiyama, Takuo Tanemura, Akio Higo, Ling-Han Li, Myung-Joon Kwack, Masaru Zaitsu, Tomofumi Oyama, Soo-Hyeck Choi, and Fumihiko Yamato: “Progress of semiconductor integrated photonics -research toward digital photonics,” Proceedings CD of Global COE Symposium on Secure-Life Electronics, paper 2.8, Tokyo, Japan, November 17 (2010).
  18. 中野義昭: “大規模太陽光発電に向けた超高効率太陽電池の研究開発,” 第53回エレクトロニクス実装学会セミナー「新エネルギー・省エネルギー分野における研究開発戦略」資料，pp. 43-69, 11月17日 (2010).
  19. 小山智史, イブラーヒム ムラット ソーアンジ, 種村拓夫, 中野義昭: “インラインパワーモニタを集積したInP 1x8 フェーズアレイ光スイッチ (1x8 InP optical phased-array switch with integrated inline power monitors),” 電子情報通信学会技術研究報告(フォトニックネットワーク研究会), PN2010--72, pp. 81-84, 鹿児島, 2月28日 (2011).
  20. Ibrahim Murat Soganci, Takuo Tanemura, Koji Takeda, Masaru Zaitsu, Mitsuru Takenaka, and Yoshiaki Nakano: “Monolithically integrated 1x100 photonic switch based on reconfigurable phased arrays and SOAs (フェーズアレイとSOAを用いたモノリシック集積1x100光スイッチ),” 電子情報通信学会技術研究報告(フォトニックネットワーク研究会, OPE, LQE共催), PN2010-42, pp. 93-97, 大阪大学, 1月28日 (2011).
  21. Yunpeng Wang, Momoko Deura, Masakazu Sugiyama, and Yoshiaki Nakano: “Post and in-situ characterization of strain control and crystal quality in quantum well solar cell structure,” Materials Science Forum, vol. 675-677, pp. 73-76, February 21 (2011).
  22. 浜本寧, 渡辺健太郎, 杉山正和, 肥後昭男, 中野義昭: “SiO2微小粒子の自己配列を利用した3次元反射防止誘電体構造 (Three dimensional dielectric anti-reflection structure using self-assembled SiO2 nano particle),” 第58回応用物理学関係連合講演会講演予稿集, 24p-BU-12, p. 14-259, 神奈川工科大学, 3月24日 (2011).
  23. Yunpeng Wang, Yu Wen, Masakazu Sugiyama, and Yoshiaki Nakano: “InGaAs/GaAsP strain-compensated superlattice solar cell (InGaAs/GaAsP歪み補償超格子セル),” 第58回応用物理学関係連合講演会講演予稿集, 24p-BU-5, p. 14-252, 神奈川工科大学, 3月24日 (2011).
  24. 山田雄吾, 渡辺健太郎, 肥後昭男, 杉山正和, 中野義昭: “集光応用を目指したIII-Vモノリシック集積直列接続太陽電池の試作 (Fabrication of monolithic integrated series-connected III-V solar cells for concentrator application),” 第58回応用物理学関係連合講演会講演予稿集, 24p-BU-3, p. 14-250, 神奈川工科大学, 3月24日 (2011).
  25. 相原健人, 福山敦彦, 王云鵬, 杉山正和, 中野義昭, 碇哲雄: “InGaAs/GaAsP歪補償量子井戸太陽電池吸収層て?のキャリア再結合損失評価 (Non-radiative carrier recombination in the InGaAs/GaAsP strain-balanced quantum wells for solar cell application by using a piezoelectric photothermal method),” 第58回応用物理学関係連合講演会講演予稿集, 24p-BU-2, p. 14-249, 神奈川工科大学, 2011年3月24日 (2011).
  26. Yu Wen, Yunpeng Wang, Masakazu Sugiyama, and Yoshiaki Nakano: “Effect of background doping on the photovoltaic characteristics of p-i-n quantum well solar cells (量子井戸挿入p-i-n太陽電池の光電変換特性に対するバックグラウンドドーピングの影響),” 第58回応用物理学関係連合講演会講演予稿集, 24a-KW-5, p. 14-241, 神奈川工科大学, 3月2日 (2011).
  27. 竹中充, 森井清仁, 杉山正和, 中野義昭, 高木信一: “気相ドーピング法を用いたGeフォトディテクターの暗電流低減 (Dark current reduction of Ge photodetectors using gas phase doping),” 第58回応用物理学関係連合講演会講演予稿集, 24p-KB-5, p. 05-083, 神奈川工科大学, 3月24日 (2011).
  28. 財津優, 肥後昭男, 種村拓夫, 中野義昭: “結合DBRレーザを用いた光クロック同期全光フリップ・フロップ (Synchronized all-optical flip-flop operations with optical clock signals using coupled distributed Bragg reflector lasers),” 第58回応用物理学関係連合講演会講演予稿集, 24p-KA-12, p. 05-059, 神奈川工科大学, 3月24 (2011).
  29. 東亮一, 平山紀友, 種村拓夫, 中野義昭: “波長0.7μm?2.3μmに対応した多成分用レーザ式ガス分析計 (A multicomponent gas analyzer with laser wavelengths from 0.7μm to 2.3μm),” 第58回応用物理学関係連合講演会講演予稿集, 24p-KF-7, p. 04-248, 神奈川工科大学, 3月24日 (2011).
  30. Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano：“Simultaneous X-ray diffraction and wafer’s curvature simulations of InGaAs/GaAsP strain-compensated multiple quantum wells for structural evaluation (In situウェハ曲率観察とXRDによるInGaAs/GaAsP歪み補償多重量子井戸の構造決定),” 第58回応用物理学関係連合講演会講演予稿集, 25a-BQ-5, p. 15-078, 神奈川工科大学, 3月25日 (2011).
  31. Shaojun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki Nakano: “In-situ measurement and simulation of wafer curvature in MOVPE of InGaAs/GaAsP strain-compensated multiple quantum wells (InGaAs/GaAsP 歪み補償量子井戸におけるウェハー曲率その場測定とシミュレーション),” 第58回応用物理学関係連合講演会講演予稿集, 25a-BQ-4, p. 15-077, 神奈川工科大学, 3月25日 (2011).
  32. 渡辺健太郎, ソダーバンル ハッサネット, 馬少駿, 杉山正和, 中野義昭: “InxGa1-xPのMOVPEにおけるin situ曲率観察による組成決定 (Determination method for composition ratio of MOVPE grown InxGa1-xP with in situ curvature measurement),” 第58回応用物理学関係連合講演会講演予稿集, 25a-BQ-3, p. 15-076, 神奈川工科大学, 3月25日 (2011).
  33. 中野義昭: “ICTと環境エネルギーデバイス (ICT and devices for energy and environment applications),” 第58回応用物理学関係連合講演会講演予稿集, 25p-BT-5, 神奈川工科大学, 3月25日 (2011).
  34. 田中肇, ソターバンル ハッサネット, 肥後昭男, 中野義昭, 杉山正和: “ナノ粒子配列を用いた微細加工 Si(111)基板上のGaN MOVPE (MOVPE of GaN on nano-patterned Si (111) substrate using self-assembled nanoparticles),” 第58回応用物理学関係連合講演会講演予稿集, 26a-BY-10, p. 15-174, 神奈川工科大学, 3月26日 (2011).
  35. 横山正史, 飯田亮, 金相賢, 田岡紀之, 卜部友二, 安田哲二, 高木秀樹, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一: “薄膜BOX層を有する膜厚10nm以下の極薄膜InGaAs-OI MOSFET (Sub-10nm extremely-thin body InGaAs-OI MOSFETs with ultrathin buried-oxide layers),” 第58回応用物理学関係連合講演会講演予稿集, 26a-KD-5, p. 13-241, 神奈川工科大学, 3月26日 (2011).
  36. 一宮佑希, 横山正史, 飯田亮, 杉山正和, 中野義昭, 竹中充, 高木信一: “ALD Al2O3を用いたIII-V CMOS Photonics用貼り合わせ基板の特性改善 (Improvement of bonded wafer for III-V CMOS photonics using ALD Al2O3 activation),” 第58回応用物理学関係連合講演会講演予稿集, 26p-KB-12, p. 05-126, 神奈川工科大学, 3月26日 (2011).

Others

  1. Ling-Han Li, Ryo Takizawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano: “Electrical pumping TO iii-V LAYER FROM HIGHLY DOPED SILICON MICRO WIRE TO REALIZE LIGHT EMISSION BY PLASMA-ASSISTED BONDING TECHNOLOGY,” 東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集, pp. 227-230 (2010).
  2. 久保田雅則, 岡田利裕, 三田吉郎, 中野義昭, 杉山正和: “バルクマイクロマシニングによる垂直ナノギャップピラニー真空計 (A bulk micromachined vertical nano-gap Pirani vacuum gauge),” 東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集, p. 226 (2010).
  3. Masanori Kubota, Toshihiro Okada, Yoshio Mita, Masakazu Sugiyama, and Yoshiaki Nakano: “A bulk micromachined vertical nano-gap Pirani wide-range pressure test structure for packed MEMS performance monitoring,”東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集, pp. 222-225 (2010).
  4. 李凌瀚, 肥後昭男, 杉山正和, 中野義昭: “プラズマアシストボンディング技術によるシリコンプラットフォームウ上へのIII-V族半導体活性層の集積化 (III-V active layer integration on Si platform by plasma assisted bonding technology),” 東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集, p. 221 (2010年).
  5. Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, and Shinichi Takagi: “High mobility metal S/D III-V-on-Insulator MOSFETs on a Si substrate using direct wafer bonding,” 東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集, pp. 32-33 (2010).
  6. 横山正史, 安田哲二, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一: “基板貼り合わせを用いたSi基板上III-V-on-Insulator nMOSFETの動作実証,” 東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集, pp. 30-31 (2010).
  7. 前田武瑠, 市川磨, 秦雅彦, 杉山正和, 中野義昭, 霜垣幸浩: “大型MOVPE反応炉での選択成長プロファイルによるGaAs成長反応機構の考察 (Analysis of GaAs metal organic vapor phase epitaxy by selective area growth technique in large-scale reactor),” 東京大学超微細リソグラフィー・ナノ計測拠点 平成21年度研究成果集 pp. 21-29 (2010).
  8. 中野義昭: “研究活動の国際化加速　現地に即し事業化対応　?東京大学先端科学技術研究センター所長 中野義昭氏に聞く,” 日刊工業新聞23面, 5月18日 (2010).
  9. 中野義昭: “開会挨拶　東京大学先端科学技術研究センター附属産学連携新エネルギー研究施設シンポジウム「新エネルギーが拓く低炭素社会」,” 7月17日(2010).
  10. “太陽エネルギー実用化への課題,” 毎日新聞(朝刊), 8面(環境), 8月16日 (2010年).
  11. 中野義昭: “ソーラークエストにおける超高効率太陽電池の研究開発,” 電波新聞「ハイテクノロジー」東大先端研特別寄稿第1回, 22-23面, 9月2日 (2010).
  12. “太陽電池向け新素材，発電効率45%超も．東大など，多接合型向け「量子井戸」生かす,” 日経産業新聞(朝刊), 13面, 9月29日 (2010).
  13. 杉山正和, 岡田至崇, 中野義昭: “III-V化合物半導体多接合太陽電池の高効率化に向けた新材料・ナノ構造の開発,” 電波新聞「ハイテクノロジー」ソーラークエスト特別寄稿第3回, 20-21面, 11月4日 (2010).
  14. “太陽光発電所，出力10倍規模 共同研究，東大・シャープ100万キロワット以上，サウジで実証実験,” 日本経済新聞(朝刊), 5面, 1月3日 (2010).
  15. 中野義昭: “革新型高効率第3世代太陽電池を目指す国際研究拠点,” グリーンナノテクノロジー，環境・エネルギー問題に挑戦する人々, 物質・材料研究機構監修, ナノテクノロジー・ネットワーク編集委員会編, 日刊工業新聞社刊, pp. 90-100, 2月25日 (2011).