東京大学工学系研究科電気系工学専攻 中野・種村研究室

論文リスト2004 (2004.4.1-2005.3.31)/H16

研究論文/Journal Papers

  1. Kazumasa Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, and Yoshiaki Nakano, "Fabrication of semiconductor laser for integration with optical isolator", Japanese Journal of Applied Physics, vol. 43, no. 4A, pp. 1388-1392, April 2004.
  2. Ning Li, Ichitaro Waki, Chaiyasit Kumtornkittikul, Ji-Hao Liang, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano, "Fabrication of AlGaN-based waveguides by inductively coupled plasma etching", Japanese Journal of Applied Physics, vol. 43, no. 10B, pp. L1340-L1342, September 24, 2004.
  3. 梁吉鎬, 笹倉賢, 中野義昭, "高速光ワイヤレス通信用発光デバイス (High-speed light emitting diodes for optical wireless communications)", 光学, vol. 33, no. 10, pp. 601-603, 2004年10月.
  4. Katsumasa Horiguchi, Yoshitada Katagiri, Yoshiaki Nakano, Ikutaro Kobayashi, and Yasuyuki Mitsuoka, "Theoretical consideration of surface-plasmon polaritons based on dynamics of electric dipoles formed on metal surfaces", Proceedings of SPIE, "Optomechatronic Micro/Nano Components, Devices, and Systems," vol. 5604, pp. 185-194, Philadelphia, Pennsylvania, October 27-28, 2004.
  5. Tadashi Suga, Takao Niimi, Ikutaro Kobayashi, Yoshitada Katagiri, Yoshiaki Nakano, and Yasuyuki Mitsuoka, "Investigation of splitting SPP modes propagating at metal-dielectric interface", Proceedings of SPIE, "Optomechatronic Micro/Nano Components, Devices, and Systems," vol. 5604, pp. 173-184, Philadelphia, Pennsylvania, October 27-28, 2004.
  6. Hiromasa Shimizu and Yoshiaki Nakano, "First demonstration of TE mode nonreciprocal propagation in an InGaAsP/InP active waveguide for an integratable optical isolator", Japanese Journal of Applied Physics, vol. 43, no. 12A, pt. 2 (Express Letter), pp. L1561-L1563, November 12, 2004.
  7. S. Inasawa, M. Sugiyama and Y. Yamaguchi, “Laser-Induced Shape Transformation of Gold Nanoparticles below the Melting Point: The Effect of Surface Melting,” J. Phys. Chem. B 109, pp. 3104-3111 (2004). 
  8. T. Nakano, M. Sugiyama, Y. Nakano and Y. Shimogaki: The Role of the Surface Adsorption Layer during MOVPE Growth Analyzed by the Flow Modulation Method, J. Crystal Growth, 472, pp. 15-23 (2004). 
  9. R. Shimizu, M. Ogino, M. Sugiyama and Y. Shimogaki, “Analysis and modeling of low pressure chemical vapor deposition of phosphorus-doped polysilicon in commercial scale reactor,” J. Vac. Sci. Technol. A22, pp. 1763-1766 (2004). 
  10. M. Sugiyama, S. Tagawa, H. Ohmura and S. Koda, “Supercritical water oxidation of a carbon particle by Schlieren photography,” AIChE. J., 50, pp. 2082-2089 (2004). 
  11. A. Morita, M. Sugiyama, H. Kameda, D. R. Hanson and S. Koda, “Mass accommodation coefficient of water: Molecular dynamics simulation and revised analysis of droplet train/flow reactor experiment,” J. Phys. Chem. B 108, pp. 9111-9120 (2004). 
  12. T. Hirose, T. Omatsu, M. Sugiyama, S. Inasawa and S. Koda, “Au-nano-particles production by pico-second ultra-violet laser deposition in Au-ion doped PMMA film,” Chem. Phys. Lett. 390, pp. 166-169 (2004). 
  13. D. R. Hanson, M. Sugiyama, A. Morita, “Revised Kinetics in the Droplet-Train Apparatus Due to a Wall Loss,” J. Phys. Chem. A, 108, 3739-3744 (2004). 
  14. M. Sugiyama, M. Kataoka, H. Ohmura, H. Fujiwara and S. Koda, “Oxidation of carbon particles in supercritical water: rate and mechanism,” Ind. Eng. Chem. Res., 43, pp. 690-699 (2004). 
  15. M. Sugiyama, H. J. Oh, Y. Nakano and Y. Shimogaki, “Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE,” J. Crystal Growth, 261 pp. 411-418 (2004).
  16. H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki, “The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials,” J. Crystal Growth, 261 (2-3) pp. 419-426 (2004).
  17. I. T. Im, H. J. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki, “Fundamental kinetics determining growth rate profiles of In and GaAs in MOCVD with horizontal reactor,” J. Crystal Growth, 261 (2-3) pp. 214-224 (2004). 

国際会議論文/ International Conferences

  1. Masakazu Sugiyama, Ho-Jin Oh, Ik-Tae Im, Yoshiaki Nakano, and Yukihiro Shimogaki, "Measurement of surface reaction rate constants and reactor-scale simulation of growth rate and composition in InGaAsP MOVPE", Workbook, 12th International Conference on Metal-Organic Vapor Phase Epitaxy, p. 29, Maui, Hawaii, May 30-June 4, 2004.
  2. Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, "The role of the surface adsorption layer during InGaAsP MOVPE growth analyzed by the flow modulation method", Workbook, 12th International Conference on Metal-Organic Vapor Phase Epitaxy,  p. 9, Maui, Hawaii, May 30-June 4, 2004.
  3. Takafumi Ohtsuka and Yoshiaki Nakano, "Strain distribution and band structure of mass-transported InAsP quantum wires buried in InGaAsP/InP", Conference Proceedings, 16th International Conference on Indium Phosphide and Related Materials (IPRM '04), P1-35, pp. 253-256, Kagoshima, Japan, May 31-June 4, 2004.
  4. Mitsuru Takenaka, Maura Raburn, and Yoshiaki Nakano, "Improvement of optical flip-flop characteristics of compact directionally-coupled bistable laser diode", Conference Proceedings, 16th International Conference on Indium Phosphide and Related Materials (IPRM '04), WA3-4, pp. 523-526, Kagoshima, Japan, May 31-June 4, 2004.
  5. Abdullah Al Amin, Xueliang Song, Kenji Sakurai,  Masakazu Sugiyama, and Yoshiaki Nakano, "Integration of semiconductor optical amplifiers  with an arrayed waveguide grating  demultiplexer by MOVPE selective area growth", Technical Digest, Topical Meeting on Integrated Photonics Research (IPR 2004), IFB4, San Francisco, California, June 30-July 2, 2004.
  6. Yoshiki Awa, Tomoyoshi Ide, Taro Arakawa, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama, Hiromasa Shimizu, Yukihiro Shimogaki, and Yoshiaki Nakano, "High etch rate and improved etched surface morphology  in electron cyclotron resonance-reactive ion etching of GaN  by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow", Extended Abstracts of the 23rd Electronic Materials Symposium, C7, pp. 45-48, Izu-Nagaoka, Shizuoka, July 7-9, 2004.
  7. Noriaki Waki, Takayuki Nakano, Ho-jin Oh, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, "Understanding the abnormal growth of InP-related materials in selective-area MOVPE", Extended Abstracts of the 23rd Electronic Materials Symposium, D5, pp. 69-72, Izu-Nagaoka, Shizuoka, July 7-9, 2004.
  8. Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki, "Examination of sub-surface in MOVPE by time modulation growth", Extended Abstracts of the 23rd Electronic Materials Symposium, D8, pp. 79-82, Izu-Nagaoka, Shizuoka, July 7-9, 2004.
  9. Shin Kaneko, Hiromasa Shimizu, Xiaoping Zhou, and Yoshiaki Nakano, "Photo-induced phase modulation in InGaAs/InGaAlAs electro-absorption modulators for all-optical wavelength conversion", Technical Digest, the Ninth Optoelectronics and Communications Conference (OECC 2004), 14F1-5, pp. 550-551, Yokohama, July 12-16, 2004.
  10. Eric Gouardes and Yoshiaki Nakano, "Mux/demux filter concatenation in an all-optical burst switching (OBS) node", Technical Digest, the Ninth Optoelectronics and Communications Conference (OECC 2004), 15A2-3, pp. 590-591, Yokohama, July 12-16, 2004.
  11. Hiromasa Shimizu and Yoshiaki Nakano, "Fabrication of a semiconductor-waveguide-type optical isolator based on the nonreciprocal loss shift", Abstract Book of the Third International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors (PASPS III), Paper 128, pp. 137-138, Santa Barbara, California, July 21-23, 2004.
  12. Mitsuru Takenaka, Maura Raburn, and Yoshiaki Nakano, "(Invited Paper) Simulation of semiconductor all-optical flip-flops using the finite-difference beam-propagation method", Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2004), TuC1, pp. 15-18, Santa Barbara, California, August 24-26, 2004.
  13. Abdullah Al Amin, Takeshi Doi, Kenji Sakurai, Zhenrui Zhang, Xueliang Song, Masakazu Sugiyama, and  Yoshiaki Nakano, "Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits", Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2004), TuC5, pp. 25-26, Santa Barbara, California, August 24-26, 2004.
  14. Maura Raburn, Mitsuru Takenaka, and Yoshiaki Nakano, "Simulation of distributed Bragg reflector multi-mode interference bistable laser diodes for cascadable all-optical flip-flops", Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2004), TuC3, pp. 21-22, Santa Barbara, California, August 24-26, 2004.
  15. Xueliang Song, Zhenrui Zhang, and Yoshiaki Nakano, "Monolithically integrated SOA-MZI all-optical switch with high-yield regrowth-free selective area MOVPE", Technical Digest, 30th European Conference on Optical Communication (ECOC 2004), Mo3.4.5, pp. 34-35, Stockholm, Sweden, September 5-9, 2004.
  16. Mitsuru Takenaka, Maura Raburn, and Yoshiaki Nakano, "All-optical flip-flop operation via two-mode bistability of multimode interference bistable laser diodes", Technical Digest, 30th European Conference on Optical Communication (ECOC 2004), Tu4.4.5, pp. 254-255, Stockholm, Sweden, September 5-9, 2004.
  17. Mitsuru Takenaka, Maura Raburn, and Yoshiaki Nakano, "All-optical flip-flop multimode interference bistable laser diodes with reverse biased saturable absorbers", Conference Digest, 19th IEEE International Semiconductor Laser Conference, WC4, pp. 26-27, Matsue, Shimane, September 22-25, 2004.
  18. Hiromasa Shimizu and Yoshiaki Nakano, "First demonstration of TE mode nonreciprocal propagation in a semiconductor active waveguide for an integratable optical isolator", Conference Digest (Post Deadline Papers), 19th IEEE International Semiconductor Laser Conference, SaB1, pp. 1-2, Matsue, Shimane, September 22-25, 2004.
  19. Ning Li, Ichitaro Waki, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano, "Fabrication of group III-nitride waveguides by inductively coupled plasma etching", Meeting Abstracts, 206th Meeting of the Electro-Chemical Society, M1, Paper 1237, Oahu, Hawaii, October 3-8, 2004.
  20. C. Kumtornkittikul, I. Waki, L. Ning, H. Otani, M. Sugiyama, Y. Nakano, “Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells,” IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581), pt. 1, pp. 140-1 Vol.1 (2004). 
  21. Yoshiki Awa, Tomoyoshi Ide, Taro Arakawa, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama, Hiromasa Shimizu, Yukihiro Shimogaki, and Yoshiaki Nakano, "Electron cyclotron resonance reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow for high etch rate and improvement of etched surface morphology", Digest of Papers, International Microprocesses and Nanotechnology Conference (MNC 2004), 28P-7-22, Osaka, Japan, October 26-29, 2004.
  22. Tomonari Shioda, Takeshi Doi, Abdullah Al Amin, Xue-Liang Song, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano, "Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metal-organic vapor phase epitaxy", Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p. 63 (2004).
  23. Noriaki Waki, Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, "Role of surface diffusion during selective area MOVPE growth of compound semiconductor", Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p. 51 (2004).
  24. Chaiyasit Kumtornkittikul, Ichitaro Waki, Ning Li, Masakazu Sugiyama,  Yukihiro Shimogaki, and Yoshiaki Nakano, "GaN/AlN multiple quantum wells and waveguide fabrication for ultrafast photonic devices utilizing intersubband transition", Conference Proceedings, IEEE Region 10 Conference (TENCON 2004), TD-10-2,0899,  pp. 140-143, Chiang Mai, Thailand, November 21-24, 2004.
  25. Hiromasa Shimizu and Yoshiaki Nakano, "Fabrication of a TE mode semiconductor-waveguide-type optical isolator based on the  nonreciprocal loss shift", Abstracts, MRS Fall Meeting, J4.7, p. 276, Boston, Massachusetts, November 29-December 3, 2004.
  26. Xueliang Song, Foo Cheong Yit, Zhenrui Zhang, and Yoshiaki Nakano, "Monolithic MZI all-optical switch with selective area MOVPE", Abstract Book, 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), T6-1, p. 99, Brisbane, Australia, December 8-10, 2004.
  27. Foo Cheong Yit, Xueliang Song, Haizheng Song, Zhenrui Zhang, Masakazu Sugiyama, and Yoshiaki Nakano, "Four-bandgap energy monolithic integration in an SOA-MZI all-optical switch with selective area MOVPE", Technical Digest, Eighth International Symposium on Contemporary Photonics Technology (CPT 2005), E-2, pp. 57-58, Tokyo, January 12-14, 2005.
  28. Hiromasa Shimizu and Yoshiaki Nakano, "14.7dB/mm TE mode nonreciprocal propagation in an InGaAsP/InP active waveguide optical isolator", Technical Digest (Post-deadline Papers), Conference on Optical Fiber Communication (OFC/NFOEC '05), PDP18, Anaheim, California, March 6-11, 2005.
  29. Y. Shimogaki, T. Iino, M. Sugiyama, T. Momose, Y.S. Kim, T. Tsumura, Y. Kajikawa, S. Noda, and H. Komiyama, “The initial nucleation behavior during Al, Cu, W-CVD on barrier metal layers,” Proceedings of Material Research Society 2004 Spring Meeting, F8.10, San Francisco, April 12-16, 2004 (2004). 
  30. M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka, Y. Egashira, K. Yamashita, H. Komiyama, and Y. Shimogaki, “Theoretical optimization of Al-CVD process based on elementary reaction simulation: from the growth rate to the surface morphology,” Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p.72 (2004). 
  31. T. Momose, M. Sugiyama, and Y. Shimogaki, “In situ observation of initial nucleation and growth processes in chemical vapor deposition and supercritical fluid deposition of copper,” Proc. Advanced Metallization Conference, Asia Session 2004 (ADMETA 2004), Tokyo, September 28-29, 2004, pp.106-107 (2004). 
  32. Y. Shimogaki, M. Sugiyama, S. Noda, H. Komiyama, “Initial nucleation and growth in fabrication of metal thin films by chemical vapor deposition,” Abstract of The 10th Asian Pacific Confederation of Chemical Engineering (APCChE 2004), Kitakyushu, 3P-08-051 (2004). 
  33. Y. Shimogaki, M. Sugiyama, Ik-Tae Im, Ho-Jin Oh, T. Tokimitsu, H. Watanabe, Y. Nakano, and H. Komiyama, “Multi-scale analysis for kinetic studies of chemical vapor deposition processes,” Abstract of The 10th Asian Pacific Confederation of Chemical Engineering (APCChE 2004), Kitakyushu, 3D-12 (2004).
  34. H. Song, M. Sugiyama, X. Song, Y. Nakano, and Y. Shimogaki, “The effect of substrate misorientation on GaAs selective area MOVPE,” Abstract of the 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Oct. 12-14, 2004, p.64 (2004).

著書/ Books

  1. Connie J. Chang-Hasnain, Dexiu Huang, Yoshiaki Nakano, and Xiaomin Ren (Chairs/Editors), "Materials, active devices, and optical amplifiers (Proceedings of SPIE, Volume 5280)", The International Society for Optical Engineering (SPIE), Bellingham, WA, 2004.

総説・解説論文/ Review Papers

  1. 中野義昭, "(招待論文) 光ワイヤレス通信用発光・受光素子 (Invited Paper: Light emission and detection devices for optical wireless communications)", 日本赤外線学会誌, vol. 13, no. 2, pp. 67-73, 2004年4月.
  2. Yoshitada Katagiri, Hiroshi Fukuda, Hiroyuki Shinojima, Yoshiaki Nakano, Masashi Nakao, and Mitsuru Naganuma, "(Invited Paper) Nanometric mecha-photonics for innovative information and communications systems", Proceedings of SPIE, "Optomechatronic Micro/Nano Components, Devices, and Systems," vol. 5604, pp. 11-22, Philadelphia, Pennsylvania, October 27-28, 2004.
  3. Yoshiaki Nakano, "(Invited Paper) Semiconductor integrated digital photonic devices", Meeting Abstracts, 206th Meeting of the Electro-Chemical Society, Symposium N1, Paper 1434, Oahu, Hawaii, October 3-8, 2004.
  4. 中野義昭, "(招待講演) ナノテク研究の新動向:デジタルフォトニクス (Invited: New trend in nano-technology: digital photonics)", 電子情報通信学会「次世代ナノ技術に関する研究専門委員会」第2回研究会講演資料集, p. 35, 2004年11月25-26日.

シンポジウム・研究会・大会等発表/ Symposium,etc...

  1. 竹和氣範明, 中野貴之, 呉豪振, 杉山正和, 中野義昭, 霜垣幸浩, "化合物半導体のMOVPE選択成長における異常成長制御", 化学工学会第69年会 講演要旨集(XX大学), C306?, 2004年3月23-25日.
  2. 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "時間変調成長によるMOVPE表面反応メカニズムの解明", 化学工学会第69年会 講演要旨集(XX大学), C306?, 2004年3月23-25日.
  3. 竹中充, モーラ・レイバン, 中野義昭, "多モード干渉カプラ型双安定半導体レーザを用いた全光フリップ・フロップ動作 (All optical flip-flop operation using a multimode interference bistable laser diode)", 電子情報通信学会総合大会(東京工業大学)講演論文集, C-4-30, p. 358, 2004年3月22-25日.
  4. 新見隆男, 小林郁太郎, 中野義昭, 片桐祥雅, 光岡靖幸, "金属光導波路におけるSPP-mode伝搬損失の評価 (Evaluation of SPP-mode loss guided by metal optical waveguide)", 電子情報通信学会総合大会(東京工業大学)講演論文集, SC-5-5, p. S-71, 2004年3月22-25日.
  5. 和氣範明, 中野貴之, 呉豪振, 杉山正和, 中野義昭, 霜垣幸浩, "化合物半導体のMOVPE選択成長における異常成長制御 (Abnormal growth control in MOVPE selective area growth of compound semiconductor)", 第51回応用物理学関係連合講演会(東京工科大学), 28a-YG-7, 2004年3月28日.
  6. 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "MOVPE法における結晶成長中での表面反応メカニズムの解明(2) (Investigation of surface reaction mechanism during crystal growth in MOVPE 2)", 第51回応用物理学関係連合講演会(東京工科大学), 28p-YG-1, 2004年3月28日.
  7. 金子慎, 清水大雅, 中野義昭, "InGaAs/InAlAs MQW-EA変調器における光誘起屈折率変化の測定 (Photo-induced refractive index change in InGaAs/InAlAs MQW-EA modulators)", 第51回応用物理学関係連合講演会(東京工科大学), 30p-ZV-1, 2004年3月30日.
  8. 李寧, C. カムトーンキッティクル, 脇一太郎, 杉山正和, 霜垣幸浩, 中野義昭, "塩素系ICPエッチングによるGaN導波路の作製 (Fabrication of GaN waveguides using Cl2-based inductively coupled plasma etching)", 第51回応用物理学関係連合講演会(東京工科大学), 30a-ZV-7, 2004年3月30日.
  9. 奈良田新一, ダルジャ・ジェッシー, 陳農, 中野義昭, "電流狭窄層をもったリッジ型半導体レーザの最適設計シミュレーション (Numerical optimization of ridge waveguide semiconductor lasers with current confinement structure)", 第51回応用物理学関係連合講演会(東京工科大学), 31p-ZZ-2, 2004年3月31日.
  10. 竹中充, モーラ・レイバン, 中野義昭, "方向性結合器型半導体レーザの小型化による全光フリップ・フロップの特性改善 (Improvement of characteristics of all-optical flip-flop using a compact directionally-coupled bistable laser diode)", 第51回応用物理学関係連合講演会(東京工科大学), 31a-ZK-9, 2004年3月31日.
  11. 大塚節文, 中野義昭, "マストランスポートInAsP量子細線のバンド構造に対するひずみの効果 (Strain effect on the band structure of mass-transported InAsP quantum wires)", 第51回応用物理学関係連合講演会(東京工科大学), 31a-ZZ-2, 2004年3月31日.
  12. 中野義昭, "(招待講演) 日本におけるフォトニックネットワークデバイス開発", 電子情報通信学会フォトニックネットワーク・ワークショップ, 東京工業大学, 2004年4月12日.
  13. (AWG波長多重・分離による光バーストスイッチングノードの透明性の変化)", 電子情報通信学会技術研究報告(フォトニックネットワーク研究会), PN2004-48, pp. 81-85, 2004年8月20日.
  14. 和氣範明, 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "化合物半導体のMOVPE選択成長における表面拡散の役割 (Role of surface diffusion during selective area MOVPE growth of compound semiconductor)", 第65回応用物理学会学術講演会(東北学院大学), 1a-P1-28, 2004年9月1日.
  15. 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "MOVPE法における結晶成長中での表面反応メカニズムの解明(3) (Investigation of surface reaction mechanism during crystal growth in MOVPE 3)", 第65回応用物理学会学術講演会(東北学院大学), 1a-P1-20, 2004年9月1日.
  16. 阿波良基, 荒川太郎, 井手智祥, 杉山正和, 清水大雅, 霜垣幸浩, 中野義昭, 羽路伸夫, 多田邦雄, "GaNのガス交互供給ECR-RIEにおけるエッチング速度・エッチング面平坦性の改善 (High etch rate and improved etched surface morphology in ECR -RIE of GaN by cyclic injection of etching gases)", 第65回応用物理学会学術講演会(東北学院大学), 1p-ZK-8, 2004年9月1日.
  17. 宋学良, 張臻瑞, 二口尚樹, 中野義昭, "MOVPE選択成長による全光スイッチの動特性 (Dynamic switching performance of all-optical switches fabricated with selective-area MOVPE)", 第65回応用物理学会学術講演会(東北学院大学), 2a-ZM-8, 2004年9月2日.
  18. 清水大雅, 中野義昭, "非相反損失に基づくTEモード半導体導波路型光アイソレータの改良試作 (Improved fabrication of a TE mode semiconductor-waveguide-type optical isolator based on the non-reciprocal loss shift)", 第65回応用物理学会学術講演会(東北学院大学), 2p-ZM-7, 2004年9月2日.
  19. Abdullah Al Amin, Kenji Sakurai, Takashi Sakurai, Masakazu Sugiyama, and Yoshiaki Nakano, "Fabrication of double-etched waveguides for compact and low-loss InP photonic circuits (コンパクトで低損失なInP光回路のための2回エッチ導波路の試作)", 第65回応用物理学会学術講演会(東北学院大学), 2a-ZM-7, 2004年9月2日.
  20. Chaiyasit Kumtornkittikul, Ning Li, Ichictaro Waki, Hiroshi Otani, Masakazu Sugiyama, and  Yoshiaki Nakano, "GaN-based waveguide structure for ultrafast photonic devices utilizing intersubband absorption (GaN系サブバンド間吸収超高速光デバイスに向けた導波路の設計)", 電子情報通信学会エレクトロニクスソサイエティ大会(徳島大学)講演論文集, C-4-17, p. 271, 2004年9月21日.
  21. 清水大雅, 中野義昭, "非相反損失変化に基づくTEモード半導体導波路型光アイソレータ", 第28回日本応用磁気学会学術講演概要集, 24aF-2, p. 516, 沖縄コンベンションセンター, 2004年9月21日〜24日.
  22. 櫻井謙司, Al Amin Abdullah, 櫻井貴志, 杉山正和, 中野義昭, "InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討 (Fabrication of InP-based arrayed waveguide gratings and integration trial with active devices by MOVPE selective-area growth)", 電子情報通信学会技術研究報告(フォトニックネットワーク研究会), PN2004-99, pp. 7-10, 2005年1月28日.
  23. 宋海政, 宋学良, 杉山正和, 中野義昭, 霜垣幸浩, "選択成長を用いた表面反応速度の解析:GaAs MOCVDにおける温度・基板面方位の効果", 化学工学会第70年会 講演要旨集(名古屋大学), M302, 489, 2005年3月24日.
  24. 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "時間変調成長による化合物半導体MOVPE法の表面反応メカニズム解析", 化学工学会第70年会 講演要旨集(名古屋大学), M303, 494, 2005年3月24日.
  25. 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭, "InGaAsP選択成長における量子井戸発光波長の予測", 化学工学会第70年会 講演要旨集(名古屋大学), M301, 2005年3月24日.
  26. 宋 海政,宋 学良,杉山正和,中野義昭,霜垣幸浩,”選択成長を用いた表面反応速度の解析:GaAs MOCVDにおける温度・基板面方位の効果”,化学工学会第70年会 講演要旨集(名古屋大学), M302, 2005年3月24日.
  27. 中野貴之,杉山正和,中野義昭,霜垣幸浩,”時間変調成長による化合物半導体MOVPE法の表面反応メカニズム解析”, 化学工学会第70年会 講演要旨集(名古屋大学), M303, 2005年3月24日.
  28. 帆足英二,平田洋介,清水泉介,藤江 誠,杉山正和,幸田清一郎,”超臨界水中の固体粒子群の酸化反応解析”,化学工学会第70年会 講演要旨集(名古屋大学), C115, 2005年3月24日.
  29. 百瀬 健,大久保智弘,杉山正和,霜垣幸浩“超臨界CO2を用いたCu薄膜堆積:製膜過程の可視化(2)”,化学工学会第70年会 講演要旨集(名古屋大学), A315, 2005年3月24日.
  30. 石井達也,百瀬 健,杉山正和,霜垣幸浩,“超臨界CO2を用いたTa化合物薄膜形成”, 化学工学会第70年会 講演要旨集(名古屋大学), A316, 2005年3月24日.
  31. 櫻井謙司, アルアミン アブドゥッラー, 塩田倫也, 杉山正和, 中野義昭, "選択成長による光合分波器と半導体光増幅器の集積化 (Selective area grown semiconductor optical amplifier integrated demultiplexer)", 電子情報通信学会総合大会(大阪大学)講演論文集, C-3-19, p. 189, 2005年3月21日.
  32. 広井典良, 薗部忠, 竹中充, 藤田博之, 中野義昭, "光IC用高密度ピッチ変換光ファイバアレイ"OPLEAF"の開発 (Development of "OPLEAF", pitch-conversion dense fiber array for photonic integrated circuits)", 電子情報通信学会総合大会(大阪大学)講演論文集, C-3-30, p. 200, 2005年3月22日.
  33. 広井典良, 薗部忠, 藤田博之, 竹中充, 中野義昭, "光IC用高密度ピッチ変換光ファイバアレイの開発 (Development of pitch conversion optical fiber array for connecting optical IC and fibers)", 第52回応用物理学関係連合講演会(埼玉大学), 29a-ZR-8, 2005年3月29日.
  34. 清水大雅, 中野義昭, "半導体/強磁性金属ハイブリッドによる光通信波長帯導波路型光アイソレータ(Waveguide optical isolator using semiconductor/ferromagnet hybrid structure for optical telecommunication)", 第52回応用物理学関係連合講演会(埼玉大学), 30p-YD-8, 2005年3月30日.
  35. 竹中充, モーラ・レイバン, 中野義昭, "多モード干渉カプラ型双安定レーザおよび半導体光増幅器を用いた信号再生波長変換器の検討 (Regenerative wavelength conversion using multimode interference bistable laser diodes with semiconductor optical amplifiers)", 第52回応用物理学関係連合講演会(埼玉大学), 31p-ZQ-7, 2005年3月31日.
  36. 清水大雅, 中野義昭, "InGaAsP/InP半導体光増幅器導波路におけるTEモード非相反損失現象の初の実証 (First demonstration of TE mode nonreciprocal propagation in an InGaAsP/InP active waveguide)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZQ-10, 2005年3月31日.
  37. イットフーチョン, 宋学良, 張臻瑞, 宋海政, 杉山正和, 中野 義昭, "マッハ・ツェンダ型SOA全光スイッチにおける4バンドギャップモノリシック集積 (Four-Bandgap Energy Monolithic Integration in an SOA-MZI All-Optical Switch)", 第52回応用物理学関係連合講演会(埼玉大学), 31p-ZQ-10, 2005年3月31日.
  38. 宋学良, イットフーチョン, 張臻瑞, 宋海政, 杉山正和, 中野 義昭, "MOVPE選択成長による全光スイッチのOTDM DEMUX動作 (OTDM demultiplexing with all-optical switches fabricated by selective-area MOVPE)", 第52回応用物理学関係連合講演会(埼玉大学), 31p-ZQ-9, 2005年3月31日.
  39. 塩田倫也, アルアミン アブドゥラー, 杉山正和, 霜垣幸浩, 中野義昭, "MOVPE選択成長のモデリングを用いたInGaAsP/InP系選択成長の特性予測 (Predictive modeling of the properties of InGaAsP/InP grown by selective area metal-organic vapor phase epitaxy)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZM-4, 2005年3月31日.
  40. 雨宮智宏, 清水大雅, 中野義昭, "TMモード非相反伝搬損失導波路の作製と実証 (Fabrication and demonstration of a TM mode nonreciprocal propagation loss waveguide)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZQ-11, 2005年3月31日.
  41. 大谷洋, チャイヤスィットカムトゥーンキティックル, 杉山正和, 中野義昭, "MOVPE成長GaN/AlN多重量子井戸中のサブバンド間遷移に寄与する電子密度の評価 (Estimation of carrier density contributing to intersuband transition in AlN/GaN MQWs grown by MOVPE)", 第52回応用物理学関係連合講演会(埼玉大学), 31p-L-2, 2005年3月31日.
  42. 宋海政, 宋学良, 杉山正和, 中野義昭, 霜垣幸浩, "MOVPE GaAs選択成長の表面反応における基板off角の影響 (The influence of substrate misorientation on surface reaction kinetics of GaAs selective area MOVPE)", 第52回応用物理学関係連合講演会(埼玉大学), 31a-ZM-3, 2005年3月31日.
  43. 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩, "MOVPE法における結晶成長中での表面反応メカニズムの解明(4) (Investigation of surface reaction mechanism during crystal growth in MOVPE 4)", 第52回応用物理学関係連合講演会(埼玉大学), 1a-ZM-1, 2005年4月1日.
  44. 張臻瑞, 宋学良, イットフーチョン, 竹中充, 杉山正和, 中野 義昭, "GRIN-SCH構造によるMOVPE選択成長光導波路の内部損失低減 (Internal loss reduction by GRIN-SCH structure in optical waveguides prepared using MOVPE selective area growth)", 第52回応用物理学関係連合講演会(埼玉大学), 1p-ZQ-4, 2005年4月1日.

その他/ Others

  1. Yoshiaki Nakano, Masakazu Sugiyama, Hiromasa Shimizu, Eric Gouardes, Mitsuru Takenaka, Maura Raburn, Jesse Darja, Foocheong Yit, and Xiaoping Zhou, "Semiconductor photonic networking devices ミresearch toward digital photonics", Proceedings of International Symposium on Electronics for Future Generations, pp. 437-442, Tokyo, March 10-11, 2004.
  2. Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki, Ichitaro Waki, Ho-Jin Oh, Xueliang Song, Abdullah Al Amin, Takafumi Ohtsuka, Takayuki Nakano, and Chaiyasit Kumtornkittikul, "Advanced metalorganic vapor phase epitaxy technology for monolithic integration of photonic devices", Proceedings of International Symposium on Electronics for Future Generations, pp. 151-155, Tokyo, March 10-11, 2004.
  3. 中野義昭, "2004年光ファイバー通信会議(OFC2004)の概要", オプトロニクス, vol. 23, no. 5, pp. 110-112, 2004年5月10日.
  4. 中野義昭, 竹中充, "リポート国際会議 OFC2004 (デバイス)", 光産業技術振興協会 Opto News (オプトニューズ), no.4 (通巻142号), pp. 38-39, 2004年7月1日.
  5. Xueliang Song, Foo Cheong Yit, Zhenrui Zhang, Masakazu Sugiyama, and Yoshiaki Nakano, "SOA-integrated MZI all-optical switches fabricated by selective area MOVPE", Abstracts of the 2004 JST CREST Symposium on Functional Evolution of Materials and Devices Based on Electron/Photon Related Phenomena (FEMD), p. 65, Tokyo, September 29-30, 2004.
  6. Hiromasa Shimizu, Tomohiro Amemiya, Yoshiaki Nakano, and Masaaki Tanaka, "Fabrication of a TE mode semiconductor waveguide-type optical isolator based on nonreciprocal loss", Abstracts of the 2004 JST CREST Symposium on Functional Evolution of Materials and Devices Based on Electron/Photon Related Phenomena (FEMD), p. 64, Tokyo, September 29-30, 2004.
  7. Chaiyasit Kumturnkittikul, Hiroshi Otani, Yukihiro Shimogaki, Masakazu Sugiyama, and Yoshiaki Nakano, "MOVPE growth of GaN/AlN multiple quantum wells and waveguide fabrication for ultrafast photonic devices", Abstracts of the 2004 JST CREST Symposium on Functional Evolution of Materials and Devices Based on Electron/Photon Related Phenomena (FEMD), p. 63, Tokyo, September 29-30, 2004.
  8. Yoshiaki Nakano, "Innovative photon-controlling devices based on artificial optical properties of semiconductors -exploration towards digital photonics", Abstracts of the 2004 JST CREST Symposium on Functional Evolution of Materials and Devices Based on Electron/Photon Related Phenomena (FEMD), pp. 56-59, Tokyo, September 29-30, 2004.
  9. 中野義昭, "最先端プロセス技術で創る半導体光デバイス集積回路", 先端知機能材料デバイスラボラトリーズ設立記念フォーラム. 2004年11月5日.
  10. 中野義昭, "デジタルフォトニクスに向けた半導体光デバイス・光集積回路", 産学官連携ビジネス交流会, 学術総合センター, 2004年12月6日.
  11. Abdullah Al Amin, "WDMサブシステムの半導体モノリシック集積化に関する研究 (Research on monolithic integration of WDM subsystem on InP)", 東京大学 固体エレクトロニクス・オプトエレクトロニクス研究発表会講演資料集, pp. 89-96, 2005年2月28日.
  12. 大塚節文, "分布帰還型レーザーダイオードの活性回折格子に向けたマストランスポートInAsP量子細線に関する研究 (Study on mass-transported InAsP quantum wire for the active grating of the distributed feedback laser diodes)", 東京大学 固体エレクトロニクス・オプトエレクトロニクス研究発表会講演資料集, pp. 81-88, 2005年2月28日.