ナノ物理デバイスラボ・田中・大矢研究室の若林勇希君（電気系工学専攻博士課程3年）らのIV族強磁性半導体を用いたヘテロ構造によるトンネル磁気抵抗効果の研究成果が、英文論文誌APEXの "Spotlights" および "Highlights" of 2016 に選ばれました。

Our APEX paper was selected as one of the "Spotlights" and "Highlights" of 2016.
Yuki Wakabayashi, Kohei Okamoto, Yoshisuke Ban, Shoichi Sato, Masaaki Tanaka, and Shinobu Ohya, "Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe" Appl. Phys. Express 9, pp.123001/1-4 (2016).
http://doi.org/10.7567/APEX.9.123001
selected as "Spotlights" paper.
selected as Highlights of 2016.